U.S. Patents

U.S. Patent 6,878,593, “Metal Oxide Semiconductor Heterostructure Field Effect Transistor,” April 12, 2005. 

1.     U.S. Patent 6,764,888, “Method of producing nitride-based heterostructure devices,” July 20, 2004. 

2.     U.S. Patent 6,690.042, Metal Oxide Semiconductor Heterostructure Field Effect Transistor, February 10, 2004. 

3.     U.S. Patent 5,278,435, “High Responsivity Gallium Nitride UV Detector,” January 1994. 

4.     U.S. Patent 5,296,395, “Method of Making a High Electron Mobility Transistor,” March 1993. 

5.     U.S. Patent 5,192,987, “High Electron Mobility Transistor with GaN/AlxGal-xN Heterojunctions,” March 1993. 

6.     U.S. Patent 5,321,713, “Aluminum gallium nitride laser” granted June 1994. 

7.     U.S. Patent 5,182,670, “Narrow band AlGaN filter”, granted January 1993. 

8.     U.S. Patent 5,146,465, “Aluminum gallium nitride laser”, September 1992. 

9.     U.S. Patent 4,616,248,”UV photocathode using negative electron affinity in Al.sub.x Ga.sub.1 N,” October 1986. 

10. U.S. Patent 4,614,961,”A tunablecut-off UV Detector based on AlGaN,” September, 1986. 

11. U.S. Patent 4,316,147, “Apparatus for determining the composition of HgCdTe and other alloy semiconductors,” February 1982. 

 
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Last modified: February 19, 2007