Dr. Ahmad Tarakji, Research Associate Professor

E-mail: tarakji@cec.sc.edu

Department of Electrical Engineering

College of Engineering & Computing

University of South Carolina

300 Main St. Room C113B

Columbia, SC 29208

Phone: (803) 777-8560

Education

        •    Ph.d. University of South Carolina. 2003 (3.8 GPA)

        •    MSEE. University of Idaho. 1996 (3.6 GPA)

        •    BSEE. San Francisco State University. 1993 (3.2 GPA)

Research Interests:

        •    GaN-based radio-frequency electronics.

        •    Energy savings through wide-bandgap semiconductor-based efficient power conversion.

        •    Discrete and integrated Power semiconductor devices

        •    Si-based CMOS process integration and transistor device development.

        •    Quantum theory as applied to emerging nanometric device structures and designs.

        •    Deep UV LEDs, and the generation of “white” solid-state lighting.

Professional Experience:

Current:

        •    Research Associate Professor at the College of Engineering & Computing; University of South Carolina.

               Dr. Tarakji is a Research Associate Professor with the College of Engineering and Computing at the University of South Carolina in Columbia. His current interests center on GaN-based high-speed and millimeter-wave electronics, especially on the potentials and challenges for energy savings through wide-bandgap semiconductor-based efficient power conversion.

 

Past:

        •    Senior Device Development Engineer at Intel Corporation ( 2004 – 2008).

               As a Senior Device Development Engineer at Intel Corp. in Hilsboro Oregon working on next-generation transistor technology development and its transitioning to high-volume-manufacturing. Work included device optimization and yield-enhancement on Intel’s 90-, 65-, and 45-nm advanced CMOS logic technologies for Intel's Celeron, Core 2 Solo and Core 2 Duo mobile processors. Dr. Tarakji was the principal device engineer for finalyzing development and optimizing mid-section process (adhesion contact) on Intel’s first generation world class 45nm high-K metal-gate technology, taking it from development through yield-enhancement and manufacturing transfer.

        •    Program manager for radio-frequency devices at Sensor Electronic Technology ( 2001 – 2004).

               Dr. Tarakji lead in the areas of design and development of nitride –based power semiconductor devices, RF devices, and system-level RF amplifiers. Most his work then was sponsored through multiple contracts with the US missile defense agency (MDA), ballistic missile defense organization (BMDO), the US navy, air force and army; all totaling a sum well over 2 million Dollars and of which he was the direct PI or co-PI of several.

Awards & Recognitions:

        •    Listed in “Who is who in America”

        •    Listed in “Who is who among executives & professionals”

        •    Outstanding graduate student award, University of South Carolina

        •    Member, IEEE

Publications:

        Principal author and coauthor in over 20 international journals in the areas of semiconductor devices and analog electronics. Authored and coauthored in an approximate additional two dozen conference proceedings.

 
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Last modified: September 21, 2010