E-mail: fareed@engr.sc.edu

Education

Ph.D., (Semiconductor Materials and Devices) Anna University, Chennai, INDIA 1997

M.Phil. (Semiconductor Materials) Anna University, Chennai, INDIA 1991

M.Sc., (Physics with Electronics) Bharathidasan University, Trichy, INDIA, 1990

B.Sc. (Physics with Electronics) University of Madras, Chennai, INDIA, 1988

Professional Experience

2006 – Present           Research Professor

Department of Electrical Engineering,

University of South Carolina, Columbia, South Carolina

2002 – 2006               Research and Development Manager,

Sensor Electronic Technology, Columbia, South Carolina

1999 – 2002                Research Scientist

Department of Electrical Engineering,

University of South Carolina, Columbia, South Carolina.

1997 – 1999                Researcher at Center of Excellence

Satellite Venture Business Laboratory

Department of Electrical Engineering

University of Tokushima, Tokushima, JAPAN

1994 – 1997                Senior Research Fellow

Crystal Growth Center, Anna University, Madras, INDIA

1992 – 1994                 Junior Research Fellow

Crystal Growth Center, Anna University, Madras, INDIA

Patents

U.S. Patent     6,841, 809       “Heterostructure semiconductor device”          

Patent application pending

20040224484   “Methods of growing nitride-based film using varying pulses” 

Research Project Grants (Principal Investigator)

1. Small Business Innovative Research Project award Phase I (4//04/2005-10/04/2005)
Gradually buffered delta doped AlGaN/GaN/AlGaN heterostructure field effect transistors
Sanctioned Amount: US $ 70,000

2.  Small Business Innovative Research Project award Phase I (7/23/2003- 01/23/2004)
Hybrid Growth of high quality AlInGaN based transistor wafers on 6H-SiC
Sanctioned Amount: US $ 70K

3.  Small Business Innovative Research Project award Phase I (7/23/2003- 01/23/2004)
Growth of thick AlGaN epitaxial layers for high power heterostructure field effect transistors on semi-insulating 6H-SiC.
Sanctioned Amount: US $ 70K

4. Small Business Innovative Research Project award  Phase I (1/24/2003- 7/24/2003)
AlInGaN based epi for high power double heterostructure field effect transistors on semi-insulating 6H-SiC substrate.
Sanctioned Amount: US $ 70K

5.  Small Business Innovative Research Project award Phase I (2/18/2003- 8/17/2003)
High temperature AlInGaN based heterostructure field effect transistors over intrinsic semi-insulating 6H-SiC substrate.
Sanctioned Amount: US $ 70K

6.  Small Business Innovative Research Project award Phase I (1/22/2003- 7/22/2003)
Development of in-situ Temperature and Bowing Control Tools for AlInGaN-based High Power Transistor Structures
Sanctioned amount: US $ 70K

7.  Small Business Innovative Research Project award Phase I (1/24/2003- 7/24/2003)
High Precision in-situ Thickness Control for Growing AlN/GaN/InN-based High Power Transistor Structures
Sanctioned Amount: US $ 70K

PAPERS PUBLISHED IN PEER-REVIEWED INTERNATIONAL JOURNALS

1.   K. Kazlauskas, G. Tamulaitis, A. Zukauskas, J. Mickevicius, M. S. Shur, R. S.
Qhalid Fareed, J. P. Zhang, R. Gaska
Study of exciton hopping in AlGaN epilayers by photoluminescence spectroscopy and monte carlo simulation
Lithunian Journal of Physics, 46 (2006) 73-77 

2.  G. Tamulaitis, J. Mickevicius, M. S. Shur, R. S. Qhalid Fareed, J. P. Zhang, R. Gaska
Carrier lifetime and diffusion coefficient of GaN epilayers grown by MEMOCVD
Physica Status solidi( c ) 3, (2006) 1923-1926

3.   D. Ciplys, M. S. Shur, R. Gaska, Q. Fareed, J. P. Zhang, X. Hu, A. Lunev and Y. Bilenko
Deep UVLED controlled AlGaN based SAW oscillator
Physica Status solidi( a )203, (2006) 1834-1838

4.   G. Tamulaitis, K. Kazlauskas, A. Zukauskas, J. Mickevicius, M. S. Shur, R. S.
      Qhalid Fareed, J. P. Zhang, R. Gaska
Study of exciton hopping in AlGaN epilayers by photoluminescence spectroscopy and monte carlo simulation
Physica Status solidi( c ) 3, (2006) 2099-2102

5.  R. B. Jain, Y. Gao, J. P. Zhang, R. S. Qhalid Fareed, R. Gaska, J. W. Li, A. Arjunan,
     E. Kuokstis, J. W. Yang and M. A. Khan
     Growth of AlN films and their characterization
Physica Status solidi( c ) 3, (2006) 1491-1494

6.   Z.Chen, R. S. Qhalid Fareed, M. Gaevski, V. Adivarahan, J. W. Yang, J. Mei, F. A.
      Ponce and M. Asif Khan
Pulsed Lateral Epitaxial Overgrowth of AlN on sapphire substrates
Applied Physics Letters (In press)

7.   J. Mickevicius, G. Tamulaitis, M. S. Shur, R. S. Qhalid Fareed, J. P. Zhang, R.
      Gaska
Saturated gain in GaN epilayers studied by variable stripe length technique
Journal of Applied Physics, 99 (2006) In Press.

8.   A. El-Fatimy,  B.T. Stephane, T. Freddric, W. Knap, D. Veksler, S. Rumyantsev, M.
S. Shur, N. Pala, R. Gaska, X. Hu, R. S. Qhalid Fareed, D. Seliuta, G. Valusis, C.
Gaquiere, D. Theron, A. Cappy
Terrahertz detection by GaN/AlGaN transistors
Electronic Letters (In Press)

9.   R. S. Qhalid Fareed, X. Hu, A. Tarakji, J. Deng, R. Gaska, M. Shur and M. A. Khan
High-power AlGaN/InGaN/AlGaN/GaN recessed gate heterostructure field-effect transistors
Applied Physics Letters,  86, (2005) 143512

10.  R. B. Jain, R. S. Q. Fareed, J. Zhang, R. Gaska, E. Kuokstis, J. Yang, H. P.
       Maruska, M. A. Khan, J. Mickevicius, G. Tamulaitis, M. S. Shur
Growth of high resistance thick GaN templates by HVPE
Physica Status Solidi (c ) 2, No.7 (2005)  pg 2091-2094

11. N. Dyakonova, S. L. Rumyantsev, M. S. Shur, Y. Meziani, F. Pascal, A. Hoffmann,
     Q. Fareed, X. Hu, Yu. Bilenko, R. Gaska, W. Knap
High magnetic field studies of 1/f noise in GaN/AlGaN heterostructure field
effect transistors
Physica Status Solidi (a)202, No. 4 (2005) ,  pg – 677-679

12.  J. Mickevicius, R. Aleksiejunas, M. S. Shur, S. Sakalauskas, G. Tamulaitis, Q.
       Fareed and R. Gaska
Correlation between yellow luminescence intensity and carrier lifetimes in GaN
Applied Physics Letters 86 (2005) 041910

13. R.S. Qhalid Fareed, J. P. Zhang, R. Gaska, G. Tamulaitis, J. Mickevicius, R.
      Aleksiejunas, M. S. Shur, M. A. Khan
Migration Enhanced MOCVD (MEMOCVD) buffers for increase carrier
lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate
Physica Status Solidi (c), 2, No. 7, 2095-2098 (2005)

14.  J. Mickevicius, G. Tamulaitis, M. Shur, Q. Fareed, and R. Gaska
Study of Optical Gain in Thick GaN Epilayers by Variable Stripe Length Technique
MRS symposium Spring meeting Proceedings (2005)

15. G. Bu, M. S. Shur, D. Ciplys, R. Remeika, R. Gaska and Q. Fareed
Guided wave acousto-optic diffraction in AlxGa1-xN epitaxial layers
Applied Physics Letters (In Press)

16.  J. Mickevicius, R. Aleksiejunas, M. S. Shur, G. Tamulaitis, R. S. Qhalid Fareed, J.
       P. Zhang, R. Gaska and M. A. Khan
Lifetime of non-equilibrium carriers in high Al content AlGaN epilayers
Applied Physics Letters (In Press)

17.  S. L. Rumyantsev, M. S. Shur, W. Knap, N. Dyakonova, F. Pascal, A. Hoffman, X. 
       Hu, R. S. Qhalid Fareed, Y. Bilenko and R. Gaska
l/f noise in GaN/AlGaN heterostructure field effect transistors in high magnetic fields at 300K
Applied Physics Letters (submitted)

18.  G. Tamulaitis,  I. Yilmaz, M. S. Shur, Q. Fareed, R. Gaska and M. A. Khan
Photoluminescence of AlGaN grown on bulk AlN substrates
Applied Physics Letters, Vol. 85,  pp.206-208 (2004)

19.  R. Remeika, A.  Sereika, P. Kazdailis, Q. Fareed, R. Gaska, D. Ciplys and M. S.
       Shur
Dependence of AlGaN based SAW oscillator frequency on temperature
Electronic Letters, Vol. 40, pp. (2004)

20. R.S. Qhalid  Fareed,    V.Adivarahan,  C. Q. Chen,  S. Rai,  E. Kuokstis,  J. W.
      Yang, M. Asif Khan,  J. Caissie, R. J. Molnar
Air-Bridged Lateral Growth of Crack-Free Al0.24Ga0.76N on Highly Relaxed Porous GaN
Applied Physics Letters, Vol. 84, pp. 696-698  (2004)

21.  Q. Fareed, R. Jain, R. Gaska, M. S. Shur, J. Wu, W. Walukiewicz and M. A. Khan
High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition
Applied Physics Letters, Vol. 84, pp. 1892-1894, (2004)

22. Chitnis A., V. Adivarahan, J. Zhang, M. Shatalov, S. Wu, Y. Yang, G. Simin, M. Asif
      Khan, X. Hu, Q. Fareed, R.Gaska and M. S.Shur
Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes
Physica Status Solidi, Vol. A200, pp. 99-101 (2003)

23. R.Aleksiejūnas, M.Sūdžius, V.Gudelis, T.Malinauskas, K.Jarašiūnas, Q.Fareed,
      R.Gaska, M.Shur, J.Zhang, J.Yang, E.Kuokštis, M.Khan
Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique
Physica status solidi C 2003, no. 7, p. 2686-2690.(2003)

24. R. Gaska, Q. Fareed, G. Tamulaitis, I. Yilmaz, M.S. Shur, C. Chen, J. Yang, E.
      Kuokstis, A. Khan, J.C. Rojo, and L.J. Schowalter
Stimulated emission at 258nm in AlN/AlGaN quantum wells grown on bulk AlN substrates
Materials Research Society Symposium Proceedings, Vol. 764, pp. C 6.9.1-6.9.5 (2003)

25. G. Bu, D. Ciplys, M. S. Shur, R. Gaska, Q. Fareed, R. Remeika, J. W. Yang and M.
      A. Khan
Surface acoustic waves and guided optical waves in AlGaN films
Materials Research Society Symposium Proceedings, Vol. 764, pp. C.6.10.1-6.10.6. (2003)

26. C. Q. Chen, J. P. Zhang, M. E. Gaevski, H. M. Wang, W. H. Sun, R. S.Q. Fareed, J.
    W. Yang, M. Asif Khan

Applied Physics Letters, Vol. 81, pp.4961-4963 (2002)

27. J. P. Zhang, M. Asif Khan, W. H. Sun, H. M. Wang, C. Q. Chen, Q. Fareed, E.
      Kuokstis and J. W. Yang
Pulsed atomic layer epitaxy of ultra high quality AlxGa1-xN structures for deep ultraviolet emissions below 230nm
Applied Physics Letters, Vol. 81, pp.4392-4394  (2002)

28. C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R.S.  Qhalid   
      Fareed, H. M. Wang, J. W. Yang, G. Simin and M. A. Khan

Applied Physics Letters, Vol. 81, pp.3194-3196  (2002)

29. E. Kuokstis, J. P. Zhang, Q. Fareed, J. W. Yang, G. Simin, M. A. Khan, R. Gaska,
      M. Shur, C. Rojo and L. Schowalter
Near band edge photoluminescence of wurtzite type-AlN
Applied Physics Letters, Vol. 81, pp.2755-2757  (2002)

30.  H. M. Wang, J. P. Zhang, C. Q. Chen, Q. Fareed, J. W. Yang and M. A. Khan
]AlN/AlGaN superlattices as dislocation filter for low threading dislocation thick AlGaN layers on sapphire

Applied Physics Letters., Vol. 81, pp. 604-606  (2002)

31. J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, G.
      Simin, and M. Asif Khan
Crack free thick AlGaN growth with AlN/AlGaN superlattices for strain management

Applied Physics Letters.  Vol.80    pp. 3542-3544 (2002)

32.  J. P. Zhang, J. W. Yang, V. Adivarahan, H. M. Wang, Q. Fareed, E. Kuokstis, A.
       Chitnis, M. Shatalov, G. Simin, M. Asif Khan, R. Gaska and M. Shur
Quaternary AlInGaN MQWs for ultraviolet LEDs
Materials Research Society Symposium Procs., Vol. 693 pp. I4.4.1-I4.4.6, (2002)

33.  J. W. Yang, C. Q. Chen, J. P. Zhang, Q. Fareed, H. M. Wang, M. –Y. Ryu, E.
Kuokstis, G. Simin and M. A. Khan
Metalorganic chemical vapor deposition of quaternary AlInGaN multiple quantum well structures for deep ultraviolet emitters
Materials Research Society Symposium Proceedings, Vol. 722 pp. K1.8.1-I1.8.6 (2002)

34. J. P. Zhang,V.Adivarahan, H. M.Wang,      E.Kuokstis, Qhalid Fareed, A.Chitnis, M.
      Shatalov, J.W.Yang, G. Simin, M.Asif Khan, R.Gaska and M. Shur
Quaternary AlInGaN multiple quantum wells for ultra violet light emitters

Japanese Journal of Applied Physics, Vol.40, pp. L921-L924  (2001)

35. J. P. Zhang, E. Kuokstis, Q. Fareed, H. M. Wang, J. W. Yang, G. Simin, M. Asif
     Khan, G. Tamulaitis, G. Kurilcik, S. Jursenas, A. Zukauskas, R. Gaska and M. Shur
Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN layers for ultraviolet light emitters
Physica Status Solidi (a), Vol.188 pp. 95-99  (2001)

36. M. Shatalov, A. Chitnis, D. Basak, J. W. Yang, Q. Fareed, G. Simin, M. Asif Khan,
      R. Gaska and M. S. Shur
Stripe Geometry light emitting diodes over Pulsed lateral epitaxial overgrown GaN for solid state white lighting

Physica Status Solidi (a), Vol.188, 147-150  (2001)

37. K. Kazlauskas, G. Tamulaitis, A. Zukauskas, J. Zhang, E. Kuokstis, Q. Fareed, H.
     Wang, J. Yang, G. Simin, M. A. Khan, R. Gaska and M. S. Shur

Materials Science  (Lithuanian Journal)   Vol. 7, pp. 209-212 (2001)

38. M.Shatalov, A.Chitnis, V.Adivarahan, A. Lunev, J.Zhang, J.W. Yang, Qhalid
Fareed, G.Simin, A. Zakheim and M.Asif Khan
Band edge luminescence in quaternary AlInGaN light emitting didoes
Applied Physics Letters., Vol. 78 pp., 817-819 (2001)

39. R.Dhanasekaran, R.S.Qhalid Fareed and P.Ramasamy
Simulation studies on the liquid phase electroepitaxial growth of III-V compound semiconductors
Journal of  Crystal Growth,   Vol. 229, pp. 169-174 (2001)

40. J.Zhang, E.Kuokstis, Q. Fareed, H. Wang, J. Yang, G.Simin, M.Asif Khan, R.Gaska
      and M.Shur
Pulsed Atomic layer epitaxy MOCVD growth of quaternary AlInGaN layer for ultraviolet light emitters
Applied  Physics Letters, Vol. 79, 925-927  (2001)

41.  M.Lachab, D.-H. Youn, R.S.Qhalid Fareed, T.Wang and S.Sakai
Characterization of Mg doped GaN grown by metalorganic chemical vapor deposition
SolidState Electronics, Vol. 44, pp. 1669-1677 (2000)

42. R.S.Qhalid Fareed, J.W. Yang, J. Zhang, V.Adivarahan and M.Asif Khan
Pulsed MOCVD technique for lateral overgrowth of GaN on SiC with conducting buffer layers
IPAP conference series, Vol. 1, pp 237-240   (2000)

43. R.S.Qhalid Fareed, J.W. Yang, J. Zhang, V.Adivarahan, V.Chaturvedi and
M.Asif Khan
Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers  using Pulsed Metalorganic Chemical Vapor Deposition
Applied Physics Letters.  Vol. 77, pp. 2343-2345 (2000)

44. R.S.Qhalid Fareed, S.Juodkazis, S.H. Chung, T.Sugahara and S.Sakai

Structural studies in MOCVD grown GaN and AlGaN using atomic force  microscopy

Materials Chemistry and Physics, Vol. 64, pp. 260-264 (2000)

45. M.Lachab, M.Nozaki, J.Wang, Y.Ishikawa, Q.Fareed, T.Wang, T.Nishikawa,
      K.Nishino and S.Sakai
Selective fabrication of InGaN nanostructures by the Focused ion beam/Metalorganic  chemical vapor deposition process

Journal of Applied Physics,  Vol. 87, pp. 1374-1378 (2000)

46. S.H.Chung,  M.Lachab, T.Wang, Y.Lacroix, D.Basak,  Qhalid FAREED, 
      Y.Kawakami, K.Nishino and S.Sakai
Effect of oxygen on the Activation of Mg acceptor in  GaN  epilayers  grown   by  Metal-organic Chemical Vapor Deposition

47. D.Basak, Q.Fareed, K.Nishino and S.Sakai
Characterization of reactive ion etched surface of GaN using methane gas with chlorine plasma

Journal of Vacuum Science and Technology B,  Vol. 18, 2491-2494 (2000)

48.K.Jeganathan, R.S.Qhalid Fareed, K.Baskar, P.Ramasamy and J.Kumar
     Investigations  on   the   under-saturated   liquid   phase  epitaxial  growth  of 
AlxGa1-xAs

Journal of Crystal Growth, Vol. 212, 29-34 (2000)

49. S. Juodkazis, P. Eliseev, H.-B. Sun, R. S. Q. Fareed, H. Misawa, Y. Naoi, S.Sakai,
G.Kopitkovas, R.Tomasiunas, J.Vaitkus

Surface morphology of GaN layers Lithuanian Journal of Physics,  Vol. 40, pp. 113-117 (2000)

50. R.S.Qhalid Fareed, S.Tottori,  K.Nishino and S.Sakai
Surface morphology studies on sublimation grown bulk GaN by atomic force microscopy

Journal of Crystal Growth,   Vol. 200, pp.  348-352 (1999)

51. R.S.Qhalid Fareed, S.Tottori, T.Inaoka, K.Nishino and S.Sakai
Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by   sublimation method

Journal of Crystal Growth, Vol. 207, pp. 174-178 (1999)

52. J.Wang,    R.S.Qhalid Fareed,   M.Hao,  S.Mahanty, S.Tottori, Y.Ishikawa, T.
      Sugahara,   Y.Morishima, K.Nishino, M.Osinski and S.Sakai
Lateral overgrowth mechanism and microstructual characteristics of bulk-like GaN layers grown by sublimation method

Journal of Applied Physics, Vol. 85, pp. 1895-1899 (1999)

53. M.Hao, S.Mahanty, R.S.Qhalid Fareed, S.Tottori, K.Nishino and S.Sakai

Applied Physics Letters, Vol. 71, 2788-2790 (1999) 

54. D.Basak, K.Yamashita,T.Sugahara, D.Nakagawa, Qhalid Fareed, K.Nishino and
      S.Sakai
Selective Etching of GaN over AlxGa1-xN Using Reaction Ion Etching Plasma of Cl2/CH4/Ar Gas Mixture

Japanese Journal of Applied Physics, Part.1A, Vol. 38, pp. 42-43 (1999)

55. J.Wang,  M.Nozaki,  M.Lachab,  R.S.Qhalid Fareed,  Y.Ishikawa, T.Wang,

Y.Naoi  and S.Sakai

Formation and optical properties of InGaN/GaN Nanostructures grown amorphous Si    substrate by MOCVD

Journal of Crystal Growth,  Vol. 200, 85-89 (1999)

56. D.Basak, K.Yamashita, T.Sugahara, Qhalid Fareed, D.Nakagawa, K.Nishinoand
      S.Sakai
Reactive ion etching of GaN and AlxGa1-xN using Cl2/CH4/Ar Plasma

Japanese Journal of Applied Physics,  Part 1.  Vol. 38, pp. 2646-2651 (1999)

57. J. Wang, M. Nozaki, Y. Ishikawa, M. Lachab, R.S.Q. Fareed, T. Wang, and  S. Sakai
Formation and Optical Properties of Selectively Grown InGaN/GaN Nano-Structures

Semiconductor Compounds, Inst. Phys. Conf. Ser. Vol. 162, pp. 829-832 (1999)

58. J. Wang, M. Nozaki, M. Lachab, Y. Ishikawa, R.S.Qhalid Fareed, T. Wang, M.S.
      Hao and  S. Sakai
Metalorganic chemical vapor deposition s elective Growth and Characterization of  InGaN Quantum Dots

Applied Physics Letters. Vol.75, pp. 950-952 (1999)

59. S.Mahanty, M.Hao, T.Sugahara, R.S.Qhalid Fareed, Y.Morishima, Y.Naoi, T.Wang
      and S.Sakai

Materials Letters,  Vol. 41, pp. 67-71 (1999)

60.  T. Sugahara, S.Sakai, R.S.Q.Fareed, S.Tottori, M.Lachab and T.Wang
Comparison of InGaN/GaN quantum wells grown on sapphire and bulk GaN  Substrates Physica Status Solidi, Vol. 216, pp. 273-276 (1999)

61. R.S.Qhalid Fareed and R. Dhanasekaran
Studies on the growth mechanism of InGaAs during Current Controlled Liquid  Phase Epitaxy
Materials Chemistry and Physics, Vol. 51, pp. 239-245 (1997) 

62. N.Gopalakrishnan, R.S.Qhalid Fareed and R.Dhanasekaran
Nucleation   and  Growth  mechanism  of   III-V   compound semiconductors
Journal  of  Indian Institute of Science,  Vol. 76, pp. 223-233 (1996) 

63. T.Rajalakshmi,R.S.Qhalid Fareed, R.Dhanasekaran, P.Ramasamy, J.Thomas and
K.Srinivasan
Characterization of Urea single crystals

Materials Science and Engineering, Vol. B3, pp. 111-115 (1996)

64. R.S.Qhalid Fareed and R.Dhanasekaran
An  investigation  on  the   diffusion   and   electromigration limited growth of InP
Materials  Science and Engineering. B. Vol. B34 pp. 152-158 (1995)

65. R.S.Qhalid Fareed and R.Dhanasekaran
Liquid  phase electro-epitaxy: Novel technique for growth of epitaxial layers suitable for semiconductor devices
`Semiconductor Devices' Ed.Krishan Lal,Narosa Publishing House,
Delhi(1995)338-340.

66. R.S.Qhalid Fareed, R.Dhanasekaran and P.Ramasamy
Concentration  profiles  of As in Ga  rich solution during electroepitaxy of   GaAs   using computer simulation technique
Journal of  Applied  Physics, Vol. 75, pp. 3953-3958 (1994) 

67. R.S.Qhalid Fareed, R.Dhanasekaran and P.Ramasamy
Investigations  on  the  concentration profiles of As during CCLPE growth of GaAs
Journal of Crystal Growth, Vol.  140, pp. 28-32 (1994)

Awards received

1. International  Union of Crystallography “Young Scientist Award” for   participation   in  the  International  School  on Growth  and Characterisation  of  Crystals  held  at  Krakow,  Poland   during  Sept. 4-14, 1994.
2. Senior Research Fellowship award by Council of Scientific and Industrial Research, Govt. of  India, 1994-1997.
3. Best Paper Award for Physical Sciences-1995 for one of the research papers by   the   Muslim   Association  of Advancement of Sciences (MAAS),  India.