Key Research Accomplishments

·         First ultra-high power stable MOSHFET with 20 W/mm Output   El. Lett., July 2005

·         First deep UV LED based white light source                              PSS(c), 2005

·         First milliwatt power continuous wave 280 nm deep UV LED      JJAP Lett. 2004, APL, 2004

·         First optically pumped a-plane AlGaN based laser                      APL, 2004

·         First 250  nm deep UV LED                                                     APL, 2004 

·         First III Nitride p-channel Field Effect Transistor                       EDL, 2002

·         First sub 300-340 nm deep UV LED                                         JJAP Lett., 2002

·         First sub 280 nm deep UV LED                                                APL, Dec., 2002

·         First AlGaN/InGaN/GaN DHFET                                                 JJAP Lett., 2001

·         First AlGaN/InGaN/GaN DHFET                                                 JAP, 2001

·         First quaternary based deep UV LED (305nm)                           JAP, 2001

·        First MOSHFET Device in AlGaN over SiC                                  APL, 2000        

·         First MOSHFET Device in AlGaN over sapphire                          EDL, 1999

·         First GaN-InGaN LED over Silicon                                             APL, 1999

·         First Quaternary Barrier IlInGaN LEDS                                       APL, 2000

·         First GaN‑A1N SIS Junction Detectors                                       APL 1995

·         First High Temperature Vertical Cavity Lasing                           Elect. Lett. 1995

·         First Voltage Controlled Photoconductive Detectors                   Elect. Lett. 1995

·         First GaN High Temp. High Frequency Transistors                      APL 1995

·         First GaN‑AlGaN Memory Elements                                           Elect. Lett. 1995

·         First GaN pn‑Junction Detector                                               Elect. Lett. 1995

·         First InGaN Vertical Cavity Stimulated Emission                         APL Aug 1994

·         First GaN‑AlGaN Sub‑micron Gate Transistor                              APL Nov 1994

·         First GaN‑AlGaN HEMT Transistor                                             APL Aug l993

·         First GaN MESFET Transistor                                                    APL Apr 1993

·         First p‑GaN Photovoltaic Detector                                            APL May 1993

·         First GaN‑AlGaN Short Period Superlattice                                APL Dec l993

·         First GaN Photoconductive Detector                                        APL Jun 1992

·         First GaN Vertical Cavity Stimulated Emission                            APL Apr 1991

·         First GaN‑AlGaN Multilayer UV Mirrors                                      APL May 1991

·         First A1N Atomic Layer Epitaxy                                               APL Nov 1992

·         First GaN‑AlGaN 2 D Electron Gas                                            APL Jun 1992

·         First GaN‑AlGaN Quantum Wells                                               APL Mar 1990

·         First GaN Atomic Layer Epitaxy                                               APL Apr 1992

·         First AlGaN Low Pressure MOCVD                                             APL Sep 1983

·         First GaN Low Pressure MOCVD                                                APL Mar 1983