GaN Based Optoelectronics

  1. J. W. Yang, A. Lunev, G. Simin, A. Chitnis, M. Shatalov and M. Asif Khan, J. E. Van Nostrand, R. Gaska, "Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates", Applied Physics Letters -- January 17, 2000 -- Volume 76, Issue 3, pp. 73-275
  2. V. Adivarahan, G. Simin, J. W. Yang, A. Lunev and M. Asif Khan, N. Pala, M. Shur, and R. Gaska, SiO2 passivated lateral geometry GaN transparent Schottky barrier detectors, Appl. Phys. Lett., V 77, 863-865 (2000)
  3. M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, Hans-Conrad zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, "Lattice and Energy Band Engineering in AlInGaN/GaN Heterostructures", Appl. Phys. Lett 76 (9) pp. 1161-1163 (2000)
  4. G. Tamulaitis, K. Kazlauskas, S. Jursenas, and A. Zukauskas, M. A. Khan, J.W. Yang, Jianping Zhang, G. Simin, R. Gaska and M. S. Shur Optical Band Gap Formation in AlInGaN Alloys Appl. Phys. Lett. V. 77, N 14, pp. 2136-2138 (2000)
  5. Jianping Zhang, J. Yang, G. Simin M. Shatalov, M. Asif Khan, M.S. Shur and R. Gaska Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers. Appl. Phys. Lett. V. 77, N 17, pp. 2668-2670 (2000)
  6. A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W. Yang, G. Simin, M. Asif Khan, R. Gaska and M. Shur," High-Quality p-n Junctions With Quaternary 
  7. AlInGaN/InGaN Quantum Wells Appl. Phys. Lett., v77, pp 3880-3802(2000)
    M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, G. Simin, A. Zakheim*, M. Asif Khan, R. Gaska, M. S. Shur, Band Edge Luminescence in Quaternary AlInGaN Light Emitting Diodes Appl. Phys. Lett. 78, 817-819 (2001)
  8. V. Adivarahan, A. Lunev, G. Simin, J. Yang, and M. Asif Khan, Very low specific resistance Pd/Ag/Au alloyed ohmic contact to p-GaN for high current devices. Appl. Phys. Lett. 78, 2781 (2001)
  9. V. Adivarahan, G. Simin, G. Tamulaitis, R. Srinivasan, J. Yang, and M. Asif Khan, M. S. Shur, R. Gaska Indium-Silicon Co-Doping of High Aluminum Content AlGaN for Solar Blind Photodetectors. Submitted to APL 
  10. J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, G. Simin M. Asif Khan, R. Gaska and M. Shur Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers "Submitted to APL, April 6, 2001
  11. E. Kuokstis, Jianping Zhang, J.W. Yang, G. Simin, M. Asif Khan, R. Gaska, and M.S. Shur Ultraviolet Luminescence of Highly Excited Quaternary AlInGaN Multiple Quantum Wells Submitted to APL  
  12. E.Kuokstis, J.W.Yang, G.Simin, M.Asif Khan, R.Gaska, and M.Shur. Stimulated
    Emission and Optical Gain Mechanisms in Photopumped GaN Epilayers and InGaN/GaN Multiple Quantum Wells Submitted to Appl. Phys. Lett., June, 2001
  13. E.Kuokstis, J.W.Yang, G.Simin, M.Asif Khan, Gaska, and M.Shur. "Blue" Excitation-Intensity-Induced Shift of Edge Emission in InGaN-Based Epilayers and Multiple Quantum Wells Submitted to Appl. Phys. Lett., June, 2001
  14. E. Kuokstis, Jianping Zhang, MeeYi Ryu, J.W. Yang, G. Simin, M. Asif Khan, R. Gaska, and M.S. Shur Localization of Carriers and Polarization Effects in AlInGaN Multiple Quantum Wells Submitted to Appl. Phys. Lett., July, 2001
 
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Last modified: February 19, 2007