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GaN Based Material Study
- M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, A.
Bykhovsky, "Piezoelectric Doping in AlInGaN/GaN
Heterostructures", Appl. Phys. Lett., 75 (18) , pp. 2806-2808,
1999
- M. Asif Khan, J. W. Yang, G. Simin, Hans zur Loye, R. Bicknell-Tassius,
R. Gaska, M. S. Shur, G. Tamulaitis, and A. Zukauskas, "Energy
Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN
Heterostructures", Physica Status Solidi, v. 176 (1), pp.
227-230 1999
- M. S. Shur, A. D. Bykhovski and R. Gaska, J. W. Yang, G. Simin and
M. A. Khan, "Accumulation Hole Layer in p-GaN/AlGaN
Heterostructures", Applied Physics Letters -- May 22, 2000 --
Volume 76, Issue 21, pp. 3061-3063
- M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur,
Hans-Conrad zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith,
D. Chandrasekhar, and R. Bicknell-Tassius, "Lattice and Energy
Band Engineering in AlInGaN/GaN Heterostructures", Appl. Phys.
Lett 76 (9) pp. 1161-1163 (2000)
- G. Tamulaitis, K. Kazlauskas, S. Jursenas, and A. Zukauskas, M. A.
Khan, J.W. Yang, Jianping Zhang, G. Simin, R. Gaska and M. S. Shur
Optical Band Gap Formation in AlInGaN Alloys Appl. Phys. Lett. V.
77, N 14, pp. 2136-2138 (2000)
- E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C.
Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, X. Hu,
M. Asif Khan, M. S. Shur, R. Gaska, and D. Maude High electron
mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates
Appl. Phys. Lett, 77, 2551-2553 (2000)
- Jianping Zhang, J. Yang, G. Simin M. Shatalov, M. Asif Khan, M.S.
Shur and R. Gaska Enhanced Luminescence in InGaN Multiple Quantum
Wells with Quaternary AlInGaN Barriers. Appl. Phys. Lett. V. 77, N
17, pp. 2668-2670 (2000)
- A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W.
Yang, G. Simin, M. Asif Khan, R. Gaska and M. Shur,"
High-Quality p-n Junctions With Quaternary AlInGaN/InGaN Quantum
Wells Appl. Phys. Lett., v77, pp 3880-3802(2000)
- R. S. Qhalid Fareed, J. W. Yang, Jianping Zhang, Vinod Adivarahan,
Vinamra Chaturvedi, and M. Asif Khan. Vertically faceted lateral
overgrowth of GaN on SiC with conducting buffer layers using pulsed
metalorganic chemical vapor deposition Appl. Phys. Lett., 77, issue
15, pp. 2343-2345 (2000)
- V. Adivarahan, G. Simin, G. Tamulaitis, R. Srinivasan, J. Yang,
and M. Asif Khan, M. S. Shur, R. Gaska Indium-Silicon Co-Doping of
High Aluminum Content AlGaN for Solar Blind Photodetectors Submitted
to Appl. Phys. Lett.
- J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, G. Simin M.
Asif Khan, R. Gaska and M. Shur. Pulsed Atomic Layer Epitaxy of
Quaternary AlInGaN Layers "Submitted to APL, April 6, 2001
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