GaN Based Electronic Devices

  1. M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, A. Bykhovsky, "Piezoelectric Doping in AlInGaN/GaN Heterostructures", Appl. Phys. Lett., 75 (18) , pp. 2806-2808, 1999
  2. S. Rumyantsev, M. E. Levinshtein, R. Gaska, M. S. Shur, A. Khan, J. W. Yang, G. Simin, A. Ping and T. Adesida, "Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates", Phys. Stat. Sol. (a), 176, 201-204 (1999)
  3. M. Asif Khan, J. W. Yang, G. Simin, Hans zur Loye, R. Bicknell-Tassius, R. Gaska, M. S. Shur, G. Tamulaitis, and A. Zukauskas, "Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructures", Physica Status Solidi, v. 176 (1), pp. 227-230 1999
  4. M. S. Shur, A. D. Bykhovski and R. Gaska, J. W. Yang, G. Simin and M. A. Khan, "Accumulation Hole Layer in p-GaN/AlGaN Heterostructures", Applied Physics Letters -- May 22, 2000 -- Volume 76, Issue 21, pp. 3061-3063
  5. M. Asif Khan, X. Hu, G. Simin, A. Lunev, and J. Yang, R. Gaska and M.S. Shur, "AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistor", IEEE Electron Device Letters, vo. 21, No. 2, pp.63-65, February 2000
  6. N. Pala, R. Gaska, S. Rumyantsev, M. S. Shur, M. Asif Khan, X. Hu, G. Simin, and J. Yang, "Low-Frequency Noise in AlGaN/GaN MOS-HFETs", Electronics Letters, v36, N3, pp. 268-270 (2000)
  7. M. E. Levinshtein, L. Rumyantsev, D. C. Look, R. J. Molnar, M. Asif Khan, G. Simin, and V. Adivarahan, M. S. Shur. Low-frequency noise in n-GaN with high electron mobility, Journal of Appl.Phys., November 1, 1999 Volume 86, Issue 9, pp. 5075-5078
  8. X. Hu, G. Simin, J. Yang and M. Asif Khan, R. Gaska, and M. S. Shur, Enhancement Mode AlGaN/GaN HFET with Selectively Grown P-N Junction Gate, ELECTRONICS LETTERS 13th April 2000 Vol. 36 No. 8, p. 753-754
  9. M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, Hans-Conrad zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, "Lattice and Energy Band Engineering in AlInGaN/GaN Heterostructures", Appl. Phys. Lett 76 (9) pp. 1161-1163 (2000)
  10. M. Asif Khan, X. Hu, G. Simin, and J. Yang, R. Gaska and M.S. Shur, "AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates", Appl.Phys.Lett. v. 77 pp 1339-1341 (2000)
  11. S.L. Rumyantsev, M. S. Shur, R. Gaska, X. Hu, M. Asif Khan, G. Simin, Transient Processes in AlGaN/GaN Heterostructure Field Effect Transistors, Electr. Lett. Vol. 36 No. 8 p. 757-759 (2000)
  12. E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, G. Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, and D. Maude. High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates. Appl. Phys. Lett, 77, 2551-2553 (2000)
  13. M. Asif Khan and J. W. Yang ,W. Knap and E. Frayssinet ,X. Hu and G. Simin , P. Prystawko, M. Leszczynski, I. Grzegory, and S. Porowski , R. Gaska , M.S. Shur, B. Beaumont, M. Teisseire, and G. Neu, GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates. Appl. Phys. Lett.,76, 3807-3809 (2000)
  14. G. Simin, X. Hu, N. Ilinskaya, J. Zhang, A. Tarakji, A. Kumar, M. Asif Khan, R. Gaska and M. S. Shur, Large Periphery High-Power AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC With Oxide-Bridging IEEE El Dev. Lett., v 22, N2, pp 53-55 (2001)
  15. "G. Simin, X. Hu, N. Ilinskaya, A. Kumar, A. Koudymov, J. Zhang, M. Asif Khan, R. Gaska and M. S. Shur, A 7.5 kW/mm2 current switch using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates Electronics Letters, v. 36, pp. 2043-2044 ( 2000)
  16. A. Tarakji, G. Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Zhang, and M. Asif Khan, M.S. Shur and R. Gaska, Mechanism of radio-frequency current collapse in GaN-AlGaN field-effect transistors. Appl. Phys. Lett., 78, N 15, pp. 2169-2171 (2001)
  17. R. Gaska, M. S. Shur, X. Hu, A. Khan, J. W. Yang, A. Taraki, G. Simin,J. Deng, T. Werner, S. Rumyantsev, and N. Pala. Highly doped thin-channel GaN-metal-semiconductor field-effect transistors. Appl. Phys. Lett. 78, No. 6, Feb. 5 (2001)
  18. S. L. Rumyantsev, N. Pala, M. S. Shur , R. Gaska, M. E. Levinshtein, M. Asif Khan, G. Simin, X. Hu, and J. Yang. Thin n-GaN films with low level of the 1/f noise Electronics Letters, v.37, no 11, pp. 720 - 721, (2001)
  19. "X. Hu, X. Zhang, A. Koudymov, G. Simin, J. Yang, A. Khan, A. Tarakji, M. Shur and R. Gaska "High-temperature characteristics of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors Submitted to IEEE El Dev. Lett., June, 2001
  20. G. Simin, A. Koudymov, A. Tarakji , X. Hu, J. Yang and M. Asif Khan, M. S. Shur and R. Gaska Induced Strain Mechanism of Current Collapse in AlGaN/GaN Heterostructure Field-Effect Transistors "Submitted to Appl. Phys. Lett. 05/02/01
 
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Last modified: February 19, 2007