2007-2008 Publications
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“Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETs”
Deng, J., Wang, W., Halder, S., Curtice, W. R., Hwang, J. C. M., Adivarahan, V., Khan, M. A., IEEE Transactions on Microwave Theory and Techniques, Volume 56, Issue 12, Part 1, Page(s):2709 – 2716, Dec. 2008
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“RF large-signal model for SiO2/AlGaN/GaN MOSHFETs” Deng, J.; Wang, W.; Halder, S.; Curtice, W. R.; Hwang, J. C. M.; Adivarahan, V.; Khan, A.; Microwave Symposium Digest, 2008 IEEE MTT-S International, Page(s):1417 – 1420,15-20 June 2008.
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“Vertical conduction strategy cranks up UV LED output power”, Asif Khan, Compound Semiconductor Magazine, April 1, 2008.
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“Present Status of Deep UV Nitride Light Emitters” Krishnan Balakrishnan, Asif Khan, Materials Science Forum, Vol. 590, pp. 141-174, 2008.
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“Ultraviolet light-emitting diodes based on group three nitrides”Asif Khan, Krishnan Balakrishnan, Tom Katona, Nature Photonics, Vol. 2, pp. 77-84, February 2008.
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“Double-Recessed High-Frequency AlInGaN/InGaN/GaN Metal–Oxide Double Heterostructure Field-Effect Transistors” Adivarahan, V., Gaevski, M.E., Islam, M.M., Bin Zhang, Yanqing Deng, Khan, M.A., IEEE Transactions on Electron Devices, Volume: 55, Issue: 2, pp. 495-499, Feb. 2008.
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“Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN”
V. Adivarahan, Q. Fareed, M.D.M. Islam, T. Katona, B. Krishnan, and A.Khan, Japanese Journal of Applied Physics, Volume 46 (2007) pp. L877-L879.
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“Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications”, N. Tipirneni, V. Adivarahan, G. Simin, A. Khan, IEEE Electron Device Letters, Volume 28, (9), pp. 784-786, Sept. 2007.
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"Metal-Organic Hydride Vapor Phase Epitaxy of AlGa1N Films over Sapphire", Qhalid Fareed, Vinod Adivarahan, Mikhail Gaevski, Thomas Katona, Asif Khan, USC and Jin Mei, Fernando Ponce, ASU, Japanese Journal of Applied Physics, Volume 46, No. 31, pp. L752-L754, August 3, 2007.
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"Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-groved sapphire substrates", J. Mei, F.A. Ponce, R.S. Qhalid Fareed, J.W. Yang, and M. Asif Khan, Applied Physics Letters, Volume 90, 221909, May 31, 2007.
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"Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates, Vinod Adivarahan, Qualid Fareed, Surendra Srivastava, Thomas Katona, Mikhail Gaevski, and Asif Khan, Japanese Journal of Applied Physics, Volume 46, No. 23, 2007, pp. 537-539 (June).
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"Photoluminescence dynamics in highly nonhomogeneously excited GaN", E. Kuokstis, G. Tamulaitis, K. Liu, M.S. Shur, J.W. Li, J. W. Yang, M. Asif Khan, Applied Physics Letters, Volume 90, 161920, April 16, 2007.
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"Advanced GaN-related devices and materials interactions", Microscopy of Semiconducting Materials XV Conference Proceedings, Cambridge, England, April 2, 2007.
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"Selectively doped high-power AlgaN/InGaN/GaN MOSDHFET", V. Adivarhan, M. Gaevski, A. Koudymov, J. Yang, G. Simin, M. A. Khan, IEEE Electron Device Letters 28 (3), 192-194, March 2007.
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