"Metal-Organic Hydride Vapor Phase Epitaxy of AlGa1N Films over Sapphire", Qhalid Fareed, Vinod Adivarahan, Mikhail Gaevski, Thomas Katona, Asif Khan, USC and Jin Mei, Fernando Ponce, ASU, Japanese Journal of Applied Physics, Volume 46, No. 31, pp. L752-L754, August 3, 2007.

"Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-groved sapphire substrates", J. Mei, F.A. Ponce, R.S. Qhalid Fareed, J.W. Yang, and M. Asif Khan, Applied Physics Letters, Volume 90, 221909, May 31, 2007.

"Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown      AlN/Sapphire Templates, Vinod Adivarahan, Qualid Fareed, Surendra Srivastava, Thomas Katona, Mikhail          Gaevski, and Asif Khan, Japanese Journal of Applied Physics, Volume 46, No. 23, 2007, pp. 537-539 (June).

"Photoluminescence dynamics in highly nonhomogeneously excited GaN", E. Kuokstis, G. Tamulaitis, K. Liu,    M.S. Shur, J.W. Li, J. W. Yang, M. Asif Khan, Applied Physics Letters, Volume 90, 161920, April 16, 2007.

"Advanced GaN-related devices and materials interactions",  MSMXV Conference, Cambridge, England, April 2, 2007

"Selectively doped high-power AlgaN/InGaN/GaN MOSDHFET, V. Adivarhan, M. Gaevski, A. Koudymov, J.   Yang, G. Simin, M. A. Khan, IEEE Electron Device Letters 28 (3), 192-194, March 2007.

"Fine Structure of AIN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering", W. H. Sun, J. P. Zhang, J. W. Yang, H. P. Maruska, M. Asif Khan, R. Liu, F. Ponci, Applied Physics Letters,     Volume 87, 211915 (3 pages), November 21, 2006.

"1.6 kV AlGaN/GaN HFETs", N. Tipirneni, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, M. Asif Khan, IEEE EDL, V. 27, N9, 716-718 , September 2006.

"Room-Temperature Stimulated Emission from AIN at 214 nm", V. Adivarahan, M. Gaevski, M.Asif Khan, M. Shatalov, Japan Journal of Applied Physics, Vol. 45, No. 49, pp. L1286-L1288, 2006.
               
"Pulsed lateral epitaxial overgrowth of AlN on sapphire  substrates", Z. Chen, R.S.Q. Fareed, M. Gaevski, V.   Adivarahan,  J.W. Yang, J. Mei, F.A. Ponce, M. Asif Khan, Applied Physics Letters , vol. 89 (8), 081905, August 21, 2006.

"High-Power Switching Using III-Nitride Metal-Oxide-Semiconductor Heterostructures", G. Simin, M. Asif Khan, M. S. Shur, R. Gaska,Selected Topics in Electronics and Systems , Vol. 41. Frontiers in Electronics (With CD- ROM). 776pp, August 2006.

 "III-nitride transistors with capacitively coupled contacts", G. Simin, Z. J. Yang, A. Koudymov, V. Adivarahan, J. Yang, M. Asif Khan, Applied Physics Letters, vol. 89 (3), 033510, July 17, 2006.

"Role of potential alloy fluctuations in photoluminescence dynamics of AlGaN epilayers", E. Kuokstis, W. Sun, M. Shatalov, J. Yang, M. Asif Khan, Applied Physics Letters, vol. 88 (26), 261905, June 26, 2006.

"High-Power Switching Using III-Nitride Metal-Oxide-Semiconductor Heterostructures", G. Simin, M. Asif Khan, M. S. Shur, R. Gaska, Int.Journel. of High Speed Electronics and Systems, v.16, N2, p.455-468 , June 2006.

"Digital oxide deposition of SiO2 layers for III-nitride metal-oxide semiconductors", V. Adivarahan, S. Rai, N. Tipirneni, A. Koudymov, J. Yang, G. Simin, M. Asif Khan, Applied Physics Letters, Volume 88, 182507 (3 pages), May 1, 2006.

"Low Threshold AlGaN/ GaN MOSHFET using Zirconium Dioxide as the gate dielectric", S. Rai, V. Adivarahan, P. Huang, N. Tipirneni, F. Husna, G. Simin, J. W. Yang, M. A. Khan, Japanese Journal of Applied Physics , Vol. 45, No. 6A, 2006, pp. 4985–4987.

"Matrix addressable micro-pixel 280 nm deep UV LED", S. Wu, S. Chhajed, L. Yan, W. Sun, M. Shatalov, V. Adivarahan, M. Asif Khan, Japanese Journal of Applied Physics, Volume 45, Issue 12, pp. L352-L354, March 17, 2006.

"Optical power degradation mechanisms in AlGaN based 280 nm deep ultraviolet light-emitting diodes on sapphire", Z. Gong, M. Gaevski, V. Adivarahan, W. Sun, M. Shatalov, M. Asif Khan, Applied Physics Letters, Vol.l 88, 121106, March 20, 2006.

"Reduction of threading dislocation densities in AIN/sapphire epilayers driven by growth mode modification", J. Bai, M. Dudley, W. H. Sun, H. M. Wang, M. Asif Khan, Applied Physics Letters, Volume 88, 051903-1-3, January 30, 2006.