2005-2006 Publications
  1. “Pulsed lateral epitaxal overgrowth of AlN on sapphire substrates”, Z. Chen, R. S. Q. Fareed, M. Gaevski, V. Adivarahan, J. W. Yang, J. Mei, F. A. Ponce, M. Asif Khan, APL submitted.
  2. “Role of potential fluctuations in photoluminescence dynamics of AlGaN epilayers”, E. Kuokstis, W. Sun, M. Shatalov, J. Yang, M. Asif Khan, APL submitted
  3. “Optical power degradation mechanisms in AlGaN based 280 nm deep ultraviolet light-emitting diodes on sapphire”, Z. Gong, M. Gaevski, V. Adivarahan, W. Sun, M. Shatalov, M. Asif Khan, APL, vol. 88, 051903-1-3 (2006).
  4. “Matrix addressable micro-pixel 280 nm deep UV LED, S. Wu, S. Chhajed, L. Yan, W. Sun, M. Shatalov, V. Adivarahan, M. Asif Khan, JJAP, vol. 45, No. 12 pp. L352-L354 (2006).
  5. “Reduction of threading dislocation densities in AlN/sapphire epilayers driven by growth mode modification”, J. Bai, M. Dudley, W. H. Sun, H. M. Wang, and M. Asif Khan, APL, vol. 88, 051903-1-3 (2006).
  6. "Nanoscale capacitance-voltage characterization of two-dimensional electron gas in AlGaN/GaN heterostructures", G. Koley, L. Lakshamanan, N. Tipirneni, M. Gaevski, A. Koudymov, G. Simin, M. A. Khan, H. Y. Cha, M. G. Spencer, Japan Journal of Applied Phsysics Letters, Vol. 44, No. 44, pp. L 1348-L 1351, October 21, 2005.
  7. "Lifetime of nonequilibrium carriers in high-Al-content AlGaN epilayers", J. Mickevi?ius, R. Aleksiej?nas, M. S. Shur, G. Tamulaitis, Q. Fareed, J. P. Zhang, R. Gaska, M. A. Khan, physica status solidi (a), Vol. 202, Iss. 1, pp. 126-130.
  8. "High-power AlGaN/InGaN/AlGaN/GaN recessed gate heterostructure field-effect transistors ", Q. Fareed, Y. Hu, A. Tarakji, J. Deng, R. Gaska, M. S. Shur, M. A. Khan, Applied Physics Lettters, 86, 143512-1 (4 April 2005).
  9. "High Power Operation of III-N MOSHFET RF Switches", Z. Yang, A. Koudymov, Vinod Adivarahan, J. Yang, G. Simin, Asif Khan, IEEE Microwave and Wireless Components Letters, Vol. 15, No. 12, pp. 850-852, December 2005
  10. "Composite-layered solid-state field controlled emitter for a better control of the cathode surface barrier", V. Semet, Vu Thien Binh, J. P. Zhang, G. Yang, M. A. Khan, R. Tsu, Journal of Vacuum Science and Technology, B, 23(2), Mar/Apr 2005.
  11. "Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures", K. Jaraši?nas, R. Aleksiej?nas, T. Malinauskas, M. S?džius, S. Miasojedovas, S. Jurš?nas, A. Žukauskas, R. Gaska, J. P. Zhang, M. S. Shur, G. Yang, E. Kuokštis, M. A. Khan, physica status solidi (a), 2005,, Vol. 202, Iss. 5 , pp. 820 - 823.
  12. “III-nitride UV devices,”M. Asif Khan, M. Shatalov, H. P. Maruska, H. M. Wang, and E. Kuokstis, JJAP, vol 44, No. 10, pp. 7191-7206 (2005).  (Invited Review)
  13. “Fine structure of AIN/AlGaN superlattice grown by pulsed atomic layer eiptaxy for dislocation filtering,” W. H. Sun, J. P. Zhang, J. W. Yang, H. P. Maruska, M. Asif Khan, R. Liu, F. A. Ponce, APL, vol 87, 211915-1-3 (2005).
  14. “AlGaN Deep-Ultraviolet Light-Emitting Diodes,” J. P. Zhang, X. Hu, A. Lunev, J. Deng, Yu. Bilenko, T. M. Katona, M. S. Shur, R. Gaska, and M. Asif Khan, JJAP, vol 44, No. 10, pp. 7250-7253 (2005).
  15. “Internal polarization fiels in GaN/AlGaN multiple quantum wells with different crystallographic orientations,” E. Kuokstis, W. H. Sun, C. Q. Chen, J. W. Yang, and M. Asif Khan, JAP vol 97, No. 10, pp. 103719-1 – 103719-6 (2005).
  16. “10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes”, Yu. Bilenko, A. Lunev, X. Hu, J. Deng, T. M. Katona, J. P. Zhang, R. Gaska, M. S. Shur, W. H. Sun, V. Adivarahan, M. S. Shatalov, Asif Khan, JJAP Exp Lett., vol. 44, No. 3 pp. L98-L100 (2005).
  17. “Growth of high resistance thick GaN templates by HVPE “, R. B. Jain, R. S. Q. Fareed, J Zhang, R. Gaska, E. Kuokstis, J. Yang, H. P. Maruska, M. A. Khan, R. Mickevicius, G. Tamulaitis, M. S. Shur, PSS(c), vol. 2, No. 7 pp. 2091-2094 (2005).
  18. “High-Power RF Switching using III-Nitride Metal-Oxide-Semiconductor-Heterojunction Capacitors”, G. Simin, V. Adivarahan, A. Koudymov, Z-J. Yang, S. Rai, J. Yang, M. Asif Khan, IEEE EDL V.26, N2, 56-58 (2005).
  19. “Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates”, C. Q. Chen, V. Adivarahan, M. Shatalov, M. E. Gaevski, E. Kuokstis, J. W. Yang, H. P. Maruska, Z. Gong, M. Asif Khan, R. Liu, A. Bell, F. A. Ponce, PSS(c), vol. 2, No. 7 pp. 2732-2735 (2005).
  20. “Luminescence from stacking faults in gallium nitride”, R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, M. A. Khan, APL, vol. 86, No. 2, pp. 021908-1 - 021908-3 (2005).
  21. “Luminescence of highly excited nonpolar a-plane GaN epilayers”, S. Jursenas, E. Kuokstis, S. Miasojedovas, G. Kurilik, A. ?ukauskas, C. Q. Chen, J. W. Yang, V. Adivarahan, M. Asif Khan, M. S. Shur , PSS(c), vol. 2, No. 7 pp. 2770-2773 (2005).
  22. “Mechanism of Current Collapse Removal in Field-Plated Nitride HFETs”, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, M. Asif Khan IEEE Electron Device Letters, Vol. 26, No. 10, pp. 704-706, October 2005.
  23. “Migration enhanced MOCVD (MEMOCVD) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate”, R. S. Qhalid Fareed, J. P. Zhang, R. Gaska, G. Tamulaitis, J. Mickevicius, R. Aleksiejunas, M. S. Shur, M. A. Khan, PSS(c), vol. 2, No. 7 pp. 2095-2098 (2005).
  24. “n-Al0.75Ga0.25N epilayers for 250 nm emission ultraviolet light emitting diodes”,  W. H. Sun, J. W. Yang, J. P. Zhang, M. E. Gaevski, C. Q. Chen, J. W. Li, Z. Gong, M. Su, M. Asif Khan, PSS(c), vol. 2, No. 7 pp. 2083-2086 (2005).
  25. “New Developments in Gallium Nitride and the Impact on Power Electronics”, M. A. Khan, G. Simin, S. G. Pytel, A. Monti, E. Santi, J. L. Hudgins, Power Electronics Specialists Conference 2005, June 2005 - Plenary talk
  26. “Performance stability of high-power III-nitride metal-oxide semiconductor-heterostructure field-effect transistors”, S. Saygi, H. Fatima, X. He, S. Rai, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, M. Asif Khan, Phys. Stat. Sol., (c) 2, No. 7, 2651–2654 (April, 2005).
  27. “Real Space Electron Transfer in III-Nitride Metal-Oxide-Semiconductor-Heterojunction Structures”, S. Saygi, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, M. Asif Khan, J. Deng, R. Gaska, M. S. Shur, APL, Vol. 87, Issue 4, pp. 043505-043507, April 2005.
  28. “Stable 20 W/mm AlGaN-GaN MOSHFET”, G. Simin, V. Adivarahan, J. Yang, A. Koudymov, S. Rai, M. Asif Khan, IEEE Electronics Letters, Vol. 41, No. 13, pp. 774-775, June 2005.
  29. “Stable CW Operation of Field Plated GaN-AlGaN MOSHFETs at 19-W/mm”, V. Adivarahan, J. Yang, A. Koudymov, G. Simin, M. Asif Khan, IEEE EDL Vol. 26, Issue 8, pp. 535-537, August 2005.
  30. “Stable operation of III-Nitride MOSHFETs at 20 W/mm powers”, G. Simin, V. Adivarahan, A. Koudymov, J. Yang, M. Asif Khan, International Workshop on Compound Semiconductors, Devices and Circuits in Europe, WOCSDICE 2005, May 2005.
  31. “Thermal Analysis of Flip-Chip Packaged 280 nm Nitride- based Deep Ultraviolet Light-Emitting Diodes”, M. Shatalov, A. Chitnis, P. Yadav, Md. F. Hasan, J. Khan, V. Adivarahan, H. P. Maruska, W. H. Sun, M. Asif Khan, APL, vol.86 iss.20 May 16, 2005; 201109.
  32. “White light generation using 280 nm light emitting diode pumps”,  M. Shatalov, S. Wu, V. Adivarahan, W.H. Sun, A. Chitnis, J. Yang, Yu. Bilenko, R. Gaska, M. Asif Khan, PSS(c), vol. 2, No. 7 pp. 2832-2835 (2005).

 
 
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Last modified: February 19, 2007