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1.
“ALGAN/GAN MOSHFET Integrated Circuit Power Converter”, Steven G.
Pytel, Santiago Lentijo, Shiva Rai, Husna Fatima, Vinod Adivarahan,
Ashay Chitnis, Jinwei Yang, Jerry L. Hudgins, Enrico Santi, Antonello
Monti, Grigory Simin, M. Asif Khan, Submitted to IEEE Power El. (2004).
2.
“Low Threshold AlGaN/GaN MOSHFET using Zirconium Dioxide as the
gate dielectric”, S. Rai, V. Adivarahan, P. Huang, N. Tipirneni, F.
Husna, G. Simin, J.W. Yang, M.A. Khan, To be submitted to APL. (2004).
3.
“Monolithically Integrated High-Power RF Switch Based on III-N
Insulated Gate Transistors”, A. Koudymov, S. Rai, V. Adivarahan, M.
Gaevski, J. Yang, G. Simin, M.A. Khan, To be published in IEEE MWC Lett.,
2004.
4.
“High-Power RF Switching using III-Nitride
Metal-Oxide-Semiconductor-Heterojunction Capacitors”, G. Simin, V.
Adivarahan, A. Koudymov, Z.J. Yang, S. Rai, J. Yang, M. Asif Khan,
Submitted to IEEE EDL 07/02/04,EDL MS #2339. (2004).
5.
“Insulated Gate III-N Heterostructure Field-Effect Transistors”,
G. Simin, M. Shur, M. Asif Khan, R. Gaska, Int. Journal of High Speed
Electronics and Systems, V. 14, N1 197-224 (2004).
6.
“High Efficiency Milliwatt Power AlGaN Light Emitting Diodes over
Sapphire with Peak Emission at 278 nm,” W.H. Sun, V. Adivarahan, S. Wu,
J.W. Yang, M. Shatalov, Y.B. Lee, I. Mokina, A. Chitnis, J.P. Zhang, M.
Asif Khan, submitted to Appl. Phys. Lett. (2004).
7.
“AlGaN Based on 280 nm Light Emitting Diodes with Continuous-
Wave Power Exceeding 1 mW at 25 mA,” J.P. Zhang, X. Hu, Yu Bilenko, J.
Deng, A. Lunev, M.S. Shur, R. Gaska, M. Shatalov, J.W. Yang, M.A. Khan,
submitted to Appl. Phys. Lett. (2004).
8.
“250 nm AlGaN Light Emitting Diodes,” V. Adivarahan, W.H. Sun, A.
Chitnis, M. Shatalov, S. Wu, H.P. Maruska, M. Asif Khan,” to be
published in Appl. Phys. Lett. (2004).
9.
“High- Power Deep UV LEDs Based on a Novel Micro-Pixel Design,”
V. Adivarahan, S. Wu, W.H. Sun, V. Mandavilli, M.S. Shatalov, G. Simin,
J.W. Yang, H.P. Maruska, M. Asif Khan, to be published in Appl. Phys.
Lett. (2004).
10.“
Micro-pixel Design Milliwatt Power 254 nm Emission Light Emitting
Diodes,” S. Wu, V. Adivarahan, M. Shatalov, A. Chitnis, W.H. Sun, M.
Asif Khan, JJAP Part 2, vol. 43, No. 8A, pp L1035-L1037 (2004).
11.“Optically Pumped Lasing at 353 nm Using Non-polar AlGaN Multiple
Quantum Wells over r-plane Sapphire,” C.Q. Chen, M. Shatalov, E.
Koukstis, V. Adivarahan, M. Gaevski, S. Rai, M.A. Khan, JJAP Part 2,
vol. 43, No. 8B, pp. L1099-L1102 (2004).
12.“AlGaN-
based 280 nm light-emitting diodes with continuous wave powers in excess
of 1.5mW,” W.H. Sun, J.P. Zhang, V. Adivarahan, A. Chitnis, M. Shatalov,
S. Wu, V. Mandavilli, J.W. Yang, M.A. Khan, Appl. Phys. Lett., 85 (4)
531-533 (2004).
13.“High-efficiency 269 nm emission deep ultraviolet light emitting
diodes,” V. Adivarahan, S. Wu, J.P. Zhang, A. Chitnis, M. Shatalov, V.
Mandavilli, R. Gaska, M.A. Khan, Appl. Phys. Lett., 84 (23): 4762-4764
(2004).
14.“Visible light emitting diodes using a-plane GaN-InGaN multiple
quantum wells over r-plane sapphire,” A. Chitnis, C, Chen, V.
Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, M.A. Khan,
Appl. Phys. Lett. 84 (18): 3663-3665 (2004).
15.“Room
–temperature optically pumped laser emission from a-plane GaN with high
optical gain characteristics,” E. Kuokstis, C.Q. Chen, J.W. Yang, M.
Shatalov, M.E. Gaevski, V. Adivarahan, M.A. Khan, Appl. Phys. Lett., 84
(16): 2998-3000 (2004).
16.“Strong
ultraviolet emission from non-polar AlGaN/GaN quantum wells grown over
r-plane sapphire substrates,” W. H. Sun, E. Kuokstis, M. Gaevski, J. P.
Zhang, C. Q. Chen, H. M. Wang, J. W. Yang, G. Simin, M. Asif Khan, R.
Gaska, M. S. Shur, Phys. Stat. Solidi (a), vol. 200, No. 1, pp. 48-51
(2003).
17.“Milliwatt
power AlGaN quantum well deep ultraviolet light emitting diodes,” A.
Chitnis, V. Adivarahan, J. Zhang, M. Shatalov, S. Wu, J. Yang, G. Simin,
M. Asif Khan, X. Hu, Q. Fareed, R. Gaska, and M. S. Shur, Phys. Stat.
Solidi (a), vol. 200, No. 1, pp. 99-101 (2003).
18.“Double-scaled
potential profile in a group-III nitride alloy revealed by Monte Carlo
simulation of exciton hopping,” K. Kazlauskas, G. Tamulaitis, A.
Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, and G. Simin, M. S. Shur,
R. Gaska, APL, vol. 83, No. 18, pp. 3722-3724 (2003).
19.“Photoluminescence
of GaN deposited on single-crystal bulk AlN with different polarities,”
G. Tamulaitis, I. Yilmaz, and M. S. Shur, R. Gaska, C. Chen, J. Yang, E.
Kuokstis, A. Khan, S. B. Schujman, and L. J. Schowalter, APL, vol. 83,
No. 17, pp. 3507-3509 (2003).
20.“AlGaN
Multiple Quantum Well Based Deep Ultraviolet Light-Emitting Diodes with
Significantly Reduced Long-wave Emission,:” J. Zhang, W. Shuai, S. Rai,
V. Mandavilli, V. Adivarahan, A. Chitnis, M. Shatalov, and M. Asif Khan,
APL, vol. 83, No. 17, pp. 3456-3458 (2003).
21.“GaN/AlGaN
multiple quantum wells on a-plane GaN pillars for stripe-geometry
nonpolar ultraviolet light-emitting devices,” W. H. Sun, J. W. Yang, C.
Q. Chen, J. P. Zhang, M. E. Gaevski, E. Kuokstis, V. Adivarahan, H. M.
Wang, Z. Gong, M. Su, and M. Asif Khan, APL, vol. 83, No. 13, pp.
2599-2601 (2003).
22.“Planar
Schottky Diodes on High Quality A-plane GaN,” V. Adivarahan, C. Q. Chen,
J. W. Yang, M. Gaevski, M. Shatalov, G. Simin, M Asif Khan, JJAP Lett.,
vol. 42, Part 2, No. 10A, pp. L1136-L1138 (2003).”
23.“Ultraviolet
Light Emitting Diodes Using Non-polar a-plane GaN-AlGaN Multiple Quantum
Wells,” C. Chen, V. Adivarahan, J. W. Yang, M. Shatalov, E. Kuokstis, M.
Asif Khan, JJAP Lett. , vol. 42, Part 2, No. 9A/B, pp. L1039-L1040
(2003).
24.“A
New Selective Area Lateral Epitaxy Approach for Depositing a -Plane GaN
over r -Plane Sapphire,” C. Q. Chen, J. P. Zhang, J. W. Yang, V.
Adivarahan, S. Rai, S. Wu, H. M. Wang, W. H. Sun, M. Su, Z. Gong, E.
Kuokstis, M. Gaevski, M. Asif Khan, JJAP Lett., Vol. 42, Part 2, No. 7B,
pp. L818-L820 (2003).
25.“Simulation
of Hot Electron and Quantum Effects in AlGaN/GaN HFET,” N. Braga, R.
Gaska, R. Mickevicius, M. S. Shur, M. Asif Khan, and G. Simin, Submitted
to JAP Oct 28, 2003.
26.“Mobility
enhancement in AlGaN/GaN metal-oxide-semiconductor heterostructure field
effect transistors,” M. E.Levinshtein, P. A.Ivanov, M. Asif Khan, G.
Simin, J. Zhang, X Hu, and J. Yang, Semicond. Sci. Technol., 18 666–669
(2003).
27.“Current-Voltage
Characteristics of III-N Heterostructure Field Effect Transistors,” A.
Koudymov, G. Simin, M. Asif Khan, A.Tarakji, R. Gaska, and M.S. Shur,
Dynamic IEEE EDL, V. 24, 680-683 (2003).
28.“On
the Low Frequency Noise Mechanisms in GaN/AlGaN HFETs,” S. L.
Rumyantsev, Y. Deng, M. S. Shur, M. E. Levinshtein, M. Asif Khan, G.
Simin, J. Yang, X. Hu, and R. Gaska, "" Semicond. Sci. Technol. v. 18,
No 6, 589-593 (2003).
29.“An
Assessment of Wide bandgap Semiconductors for Power Devices,”
J.L.Hudgins, G.S. Simin, E.Santi, and M. Asif Khan, IEEE Trans. on Power
Electronics, V.18, 907-914 (2003).
30.“AlGaN/GaN
heterostructure field-effect transistors on single-crystal bulk AlN,”
X. Hu, J. Deng, N. Pala, and R. Gaska, M. S. Shur, C. Q. Chen, J. Yang,
G. Simin, M. A. Khan, J. C. Rojo and L. J. Schowalter, Appl.
Phys.Lett.,82, Issue 8, pp. 1299-1301 (2003).
31.“AlGaN/GaN/AlGaN
Double Heterostructure for high power III-N FETs,” C. Chen, J. Zhang,
V. Adivarahan, A. Koudymov, H. Fatima, G. Simin, J. Yang, and M. Asif
Khan, Appl. Phys. Lett., 82, 4593 (2003).
32.“Large-Signal
Linearity in III-N Metal-Oxide-Semiconductor Double Heterostructure
Field-Effect Transistors,” A. Tarakji, H. Fatima, X. Hu, J. P. Zhang, G.
Simin, M. Asif Khan, M. Shur, and R. Gaska, IEEE EDL, V.24, 369-371
(2003).
33.“Insulating
Gate III-N Heterostructure Field-Effect Transistors for High Power
Microwave and Switching Applications,” M. Asif Khan, G. Simin, J. Yang,
J. Zhang, A. Koudymov, M. S.Shur, R. Gaska, X. Hu, and A. Tarakji, IEEE
MTT- 51, 624- 633 (2003) (special Issue on nitride devices).
34.“Thermal
management of AlGaN/GaN HFETs on sapphire using flip-chip bonding with
epoxy underfill, IEEE EDL, V. 24, 375-377 (2003).
35."On
the Low Frequency Noise Mechanisms in GaN/AlGaN HFETs", S. L.
Rumyantsev, Y. Deng, M. S. Shur, M. E. Levinshtein, M. Asif Khan, G.
Simin, J. Yang, X. Hu, and R. Gaska, Semicond. Sci. Technol. V. 18 No 6,
589-593 (2003).
36.“An
Assessment of Wide bandgap Semiconductors for Power Devices”,
J.L.Hudgins, G.S. Simin, E.Santi, M. Asif Khan, IEEE Transactions on
Power Electronics, V.18, 907-914 (2003).
37.“Time
Resolved Electroluminescence of AlGaN Based Light Emitting Diodes with
Emission at 285 nm”, M. Shatalov, A. Chitnis, V. Mandavilli, R.
Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu, G. Simin, M. Asif Khan,
G. Tamulaitis, A Sereika, I. Yilmaz, M. S. Shur and R. Gaska, APL, vol.
82, No. 2, pp. 167-169 (2003).
38.“Improved
performance of 325-nm emission AlGaN ultraviolet light-emitting
diodes”, A. Chitnis, J. P. Zhang, V. Adivarahan, M. Shatalov, S. Wu,
R. Pachipulusu, V. Mandavilli, M. Asif Khan, APL, vol. 82, No. 16, pp.
2565-2567 (2003).
39.
“High-Quality
AlGaN Layers over Pulsed Atomic Layer Epitaxially Grown AlN Templates
for Deep Ultraviolet Light Emitting Diodes”, J. P. Zhang, H. M. Wang,
W. H. Sun, V. Adivarahan, S. Wu, A.Chitnis, C. Q. Chen, M. Shatalov, E.
Kuokstis, J. W. Yang, M. Asif Khan, J. Electronic Materials, vol. 32,
No. 5, pp. 364-370 (2003). |
