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“Two
Mechanisms of Blue-Shift of Edge Emission in InGaN-Based Epilayers and
Multiple Quantum Wells”, E. Kuokstis, J.W.Yang, G.Simin, M.Asif Khan, R.
Gaska, and M.S. Shur, APL, vol. 80, No. 6, pp. 977-979 (2002).
1.
“Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattice
for strain management”, J.P.Zhang, H.M.Wang, M.E.Gaevski, C.Q.Chen,
Q.Fareed, J.W.Yang, G.Simin, M.A.Khan, APL, vol. 80, No. 19, pp.
3542-3544 (2002).
2.
“Luminescence mechanisms in quaternary AlxInyGa1-x-yN
materials”, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, G.
Simin, and M. Asif Khan, APL, vol. 80, No. 20, pp. 3730-3732
(2002).
3.
“Time-resolved photoluminescence of quaternary AlInGaN-based multiple
quantum wells,” Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang,
G.Simin, M. Asif Khan, G. G. Sim and P. W. Yu, APL, vol. 80, No. 21, pp.
3943-3945 (2002).
4.
“AlN/AlGaN supplattices as dislocation filter for low threading
dislocation thick AlGaN layers on sapphire,” H.M.Wang, J.P. Zhang, C.Q.
Chen, Q. Fareed, J.W.Yang, M.A Khan, APL, vol. 81, No. 4, pp. 604-606
(2002).
5.
“Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light
Emitting Diode (LED) over Sapphire Substrate”, A. Chitnis, V.
Adivarahan, M. Shatalov, J. P. Zhang, M. Gaevski, Wu Shuai, R.
Pachipulusu, J. Sun, K. Simin, G. Simin, J. W. Yang and M. Asif Khan,
JJAP Lett., vol. 41, Part 2, No. 3B, pp. L320-L322 (2002).
6.
“Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN
Layers and Multiple Quantuam Wells for Ultraviolet Light Emission”,
C.Q.Chen, J.W.Yang, M.Y.Ryu, J.P.Zhang, E.Kuokstis, G. Simin, M. Asif
Khan, JJAP Part1, vol. 41, Part 1, No. 4A, pp. 1924-1928 (2002).
7.
“Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm”, V.
Adivarahan, J. P. Zhang, A. Chitnis, W. Shuai, J. Sun, R. Pachipulusu,
M. Shatalov and M. Asif Khan, JJAP Lett. (express Letter), vol. 41, Part
2, No. 4B, pp. L435-L436 (2002).
8.
“324
nm Light Emitting Diodes with Milliwatt Powers”, A. Chitnis, J. P.
Zhang, V. Adivarahan, W. Shuai, J. Sun, M. Shatalov, J. W. Yang, G.
Simin, M. Asif Khan, JJAP Lett., vol. 41, Part 2, No. 4B, pp. L450-L451
(2002).
9.
“Deep Ultraviolet Light Emitting Diodes using Quaternary AlInGaN
Multiple Quantum Wells”, M. Shatalov, J. P. Zhang, A. Chitnis, V.
Adivarahan, J. W. Yang, G. Simin, M. Asif Khan, IEEE Sel. Topics in
Quant. Electron., vol. 8, No. 2, pp. 302-309 (2002).
10.“Lateral
Current Crowding in Deep UV Light Emitting Diodes over Sapphire
Substrates”, M. Shatalov, G. Simin, V. Adivarahan, A. Chitnis,
S. Wu, R. Pachipulusu, K. Simin, J. P. Zhang, J. W. Yang, M.
Asif Khan, JJAP, vol. 41, Part 1, No. 8, pp. 5083-5087 (2002).
11.“Near-Band-Edge
Photoluminescence of Wurtzite-Type AlN”, E. Kuokstis, J. Zhang, Q.
Fareed, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, M. Shur, C. Rojo,
and L. Schowalter, APL, vol. 81, No. 15, pp. 2755-2757 (2002).
12.“Low
Temperature Operation of AlGaN Single Quantum Well Light Emitting Diodes
with Deep UV Emission at 285 nm”, A. Chitnis, R. Pachipulusu, V.
Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu,
G. Simin, and M. Asif Khan, APL, vol. 81, No. 16, pp. 2938-2940 (2002).
13.“Differential
carrier lifetime in AlGaN based multiple quantum well deep UV light
emitting diodes at 325 nm”, M. Shatalov, A. Chitnis, A. Koudymov, J. P.
Zhang, V. Adivarahan, G. Simin, and M. Asif Khan, JJAP Lett., vol. 41,
Part 2, No. 10B, pp. L1146-L1148 (2002).
14.“GaN
homoepitaxy on freestanding (1100) oriented GaN substrates”, C. Q.
Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q.
Fareed, H. M. Wang, J. W. Yang, G. Simin, M. A. Khan, H.-P. Maruska, D.
W. Hill, Mitch M. C. Chou, and B. Chai, Applied Physics Letters, vol.
81, No. 17, pp. 3194-3196 (2002).
15.“Self-Heating
Effects at High Pump Currents in Deep UV Light Emitting Diodes at
325nm”, A. Chitnis, S. Jason, V. Mandavilli, R. Pachipulusu, S. Wu, M.
Gaevski, V. Adivarahan, J. P. Zhang, M. Asif Khan, A. Sarua and M.
Kuball, Applied Physics Letters, vol. 81, No. 18, pp. 3491-3493 (2002).
16.“AlGaN
Single-Quantum-Well Light-Emitting Diodes with Emission at 285 nm”, V.
Adivarahan, S. Wu, A. Chitnis, R. Pachipulusu, V. Mandavilli, M.
Shatalov, J. P. Zhang, M. Asif Khan, G. Tamulaitis, A Sereika, I.
Yilmaz, M. S. Shur and R. Gaska, Applied Physics Letters, vol. 81, No.
19, pp. 3666-3668 (2002).
17.“Polarization
Effects in Photoluminescence of C- and M-Plane GaN/AlGaN Multiple
Quantum Wells”, E. Kuokstis, C. Q. Chen, M. Gaevski, W. H. Sun, J. W.
Yang, G. Simin, and M. Asif Khan, Applied Physics Letters, vol. 81, No.
22, pp. 4130-4132 (2002).
18.“Pulsed
Atomic Layer Epitaxy of Ultrahigh-Quality AlxGa1-xN structures for Deep
Ultraviolet Emissions below 230 nm”, J. P. Zhang, M. Asif Khan, W. H.
Sun, H. M. Wang, C. Q. Chen, Q. Fareed, E. Kuokstis, J. W. Yang,
19.“High
dc Power 325 nm Emission Deep UV LEDs over Sapphire”, A. Chitnis, V.
Adivarahan, J. P. Zhang, S. Wu, J. Sun, R. Pachipulusu, V. Mandavilli,
M. Gaevski, M. Shatalov and M. Asif Khan, EL, Vol. 25.
20.“AlGaN
layers grown on GaN using strain-relief interlayer”, C.Q.Chen,
J.P.Zhang, M. E. Gaevski, H.M.Wang, W. H. Sun, R.S. Q. Fareed, J. W.
Yang, M. A. Khan, Applied Physics Letters, to be published.
21.“Milliwatt
Power Deep Ultraviolet Light Emitting Diodes over Sapphire with Emission
at 278 nm”, J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli,
R. Pachipulusu, M. Shatalov, G. Simin, J. W. Yang, M. Asif Khan, Applied
Physics Letters, to be published, December 23, 2002.
22.“Time
Resolved Electroluminescence of AlGaN Based Light Emitting
Diodes with Emission at 285 nm, M. Shatalov, A. Chitnis, V.
Mandavilli, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu,
G. Simin, M. Asif Khan, G. Tamulaitis, A Sereika, I. Yilmaz, M.
S. Shur and R. Gaska, Applied Physics Letters, to be published,
January 2003.
23.“Quaternary
AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes”,
J. P. Zhang, V. Adivarahan, H. M. Wang, Q. Fareed, E. Koukstis, A.
Chitnis, M. Shatalov, J. W. Yang, G. Simin, M. Asif Khan, M. S. Shur, R.
Gaska, JJAP Lett., vol. 40, part 2, No. 9A/B, pp. L921-L924 (2001).
24.“Band
Edge Luminescence in Quaternary AlInGaN Light Emitting Diodes”,
M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang,
Q. Fareed, G. Simin, A. Zakheim”, M. A. Khan, R. Gaska, and
M. S. Shur, Applied Physics Letters, (78), 817-819 (2001)
25.“Large
Periphery High-Power AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure
Field Effect Transistors on SiC”, G. Simin, X. Hu, N. Ilinskaya, J.
Zhang, A. Tarakji, A. Kumar M. A. Khan, R. Gaska and M. S. Shur, IEEE
Electron Device Letters, (v22), 53-55 (2001).
26.“Mechanism
of Radio-Frequency Current Collapse in GaN-AlGaN Field-Effect
Transistors”, A. Tarakji, G. Simin, N. Ilinskaya, X. Hu, A. Kumar, A.
Koudymov, J. Zhang, and M. Asif Khan, M.S.Shur and R. Gaska, Applied
Physics Letters (78) 2169-2171 (2001).
27.“Very
Low Specific Resistance Pd/Ag/Au Alloyed Ohmic Contact to p-GaN for High
Current Devices”, V. Adivarahan, A. Lunev, G. Simin, J. Yang, and M.
Asif Khan, Applied Physics Letters (v78) 2781 (2001).
28.“Highly
Doped Thin-Channel GaN-Metal-Semiconductor Field-Effect Transistors”, R.
Gaska, M.S. Shur, X. Hu, A. Khan, J. W. Yang, A. Tarajki, G. Simin, J.
Deng. T. Werner, S. Rumyantsev, and N. Pala, Applied Physics Letters
(n78) 6 (2001).
29.“Thin
n-GaN Films With Low Level of the l/f Noise”, S. L. Rumyantsev, N. Pala,
M.S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, G. Simin, X. Hu
and J. Yang, Electronics Letters (v37) 720-721 (2001).
30.“Indium-Silicon
Co-Doping of High Aluminum Content AlGaN for Solar Blind
Photodetectors”, V. Adivarahan, G. Simin, G. Tamulaitis, R. Srinivasan,
J. Yang, and M. Asif Khan, M. S. Shur, R. Gaska, Applied Physics
Letters, (2001).
31.“Pulsed
Atomic Layer Epitaxy of Quaternary AlInGaN Layers”, J. Zhang, E.
Kuokstis, Q. Fareed, H. Wang, J. Yang, G. Simin, M. Asif Khan, R. Gaska
and M. Shur, Applied Physics Letters, vol. 79, No. 7, pp. 925-927
(2001).
32.“Induced
Strain Mechanism of Current Collapse in AlGaN/GaN Heterostructure
Field-Effect Transistors”, G. Simin, A Koudymov, A. Tarakji, X. Hu, J.
Yang and M. Asif Khan, M. S. Shur and R. Gaska, submitted to Applied
Physics Letters, (2001).
33.“Drift
Mobility of Electrons in AlGaN/GaN MOSHFET”, P.A. Ivanov, M. E.
Levinshtein, G. Simin, X.Hu, J. yang, M. Asif Khan, S. L. Rumyantsev, M.
S. Shur and R. Gaska, submitted to Electronic Letters (2001).
34.“Ultraviolet
Light Emitting Diodes at 340 nanometers Using Quaternary AlInGaN
Multiple Quantum Wells”, V. Adivarahan, A. Chitnis, J.P. Zhang, M.
Shatalov, J. W. Yang, G. Simin, M. Asif Khan, R. Gaska and M. S. Shur,
Applied Physics Letters, (2001), vol. 79, No. 25, pp. 4240-4242 (2001).
35.“Low
Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor
Field Effect Transistors”, S. L. Rumyantsev, N. Pala, M.S. Shur and R.
Gaska, M. E. Levinshtein, M. Asif Khan, G. Simin, X. Hu and J. Yang,
Journal of Applied Physics (v90) 310-314 (2001).
36.“Two
Mechanisms of Blue-Shift of Edge Emission in InGaN-Based
Epilayers and Multiple Quantum Wells:, E. Kuokstis, J. W. Yang,
G. Simin, M. Asif Khan, R. Gaska and M. Shur, submitted to
Applied Physics Letters (2001).
37.“Localization
of Carriers and Polarization Effects in AlInGaN Multiple Quantum Wells:
E. Kuokstis, J. Zhang, M. Ryu, J. W. Yang, G. Simin, M. Asif Khan, R.
Gaska and M. S. Shur, Applied Physics Letters, vol. 79, No. 26, pp.
4375-4377 (2001).
38.“Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor
Heterostructure Field Effect Transistors”, X. Hu, A. Koudymov, G.
Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, and R. Gaska,
submitted to Applied Physics Letters (2001).
39.“AlGaN/InGaN/GaN
Double Heterostructure Field-Effect Transistor”, G. Simin, X. Hu, A.
Tarakji, J. Zhang, A. Koudymov, S. Saygi, J. Yang, M. Asif Khan, M. S.
Shur, and R. Gaska, Japanese Journal of Applied Physics (v400 L921-L924
(2001).
40.“High-Temperature
Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure
Field-Effect-Transistors”, G. Simin, A Tarakji, X. Hu, A. Koudymov, J.
Yang, M. Asif Khan, M. S. Shur and R. Gaska, Physica Status Solidi
(v228) 2 (2001).
41.“Polarization
Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum
Wells”, E. Kuokstis, J. Zhang, J. W. Yang, G. Simin, M. Asif Khan, R.
Gaska and M. Shur, Physica Status Solidi, vol. 228, No. 2, pp. 559-562
(2001).
42.“Pulsed
Atomic layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light
Emitters”, J. P. Zhang, E. Kuokstis, Q. Fareed, H. M. Wang, J. W. Yang,
G. Simin, M. Asif Khan, G. Tamulaitis, G. Kurilicik, S. Jursenas, A.
Zukauskas, R. Gaska and M. Shur, Physica Status Solidi, vol. 188, No. 1,
pp. 95-99 (2001).
43.“Quaternary
AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes”,
J. P. Zhang, V. Adivarahan, H. Wang, Q. Fareed, E. Kuokstis, A. Chitnis,
M. Shatalov, J. Yang, G. Simin, M. Asif Khan, M. Shur and R. Gaska,
Japanese Journal of Applied Physics (v40) 921-924 (2001).
44.
“Stripe Geometry
Ultraviolet Light Emitting Diodes at 305 nanometers Using Quaternary
AiInGaN Multiple Quantum Wells”, M. Asif Khan, V. Adivarahan, J. Zhang,
C. Chen, E. Kuokstis, A. Chitnis, M. Shatalov, J. Yang and G. Simin,
Japanese Journal of Applied Physics, vol. 40, Part 2, No. 12A, pp.
L1308-L1310 (2001).
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