1999 - 2000 Publications

 

  1. "High-Current Operation of InGaN Multiple Quantum Well Light Emitting Diodes with Quaternary AlInGaN Barriers", M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, G. Simin, M. Asif Khan, R. Gaska and M. S. Shur, submitted to Electronics Letters.

  2. "Band Edge Luminescence in Quaternary AlInGaN Light Emitting Diodes", M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, G. Simin, A. Zakheim", M. A. Khan, R. Gaska, and M. S. Shur, submitted to Electronics Letters.

  3. "High-Quality p-n Junctions With Quaternary AlInGaN/InGaN Quantum Wells", A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W. Yang, G. Simin, M. A. Khan, R. Gaska and M. Shur, submitted to Electronics Letters.

  4. "Large Periphery High-Power AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC", G. Simin, X. Hu, N. Ilinskaya, J. Zhang, A. Tarakji, A. Kumar M. A. Khan, R. Gaska and M. S. Shur, submitted to Electronics Letters.

  5. "Negative Differential Conductivity in AlGaN/GaN Heterostructure Field Effect Transistors", J. Deng, R. Gaska, M. S. Shur, M. A. Khan, J. W. Yang and G. Simin, submitted to Applied Physics Letters.

  6. "Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AllnGaN Barriers", J. Zhang, J. Yang, G. Simin, M. A. Khan, M. S. Shur, and R. Gaska, to be published in October 2000 issue of Applied Physics Letters.

  7. "AlGaN/GaN Buried Channel Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates", M. A. Khan, X. Hu, G. Simin, and J. Yang, to be published in October 2000 issue of Applied Physics Letters.

  8. "High Electron Mobility in AlGaN/GaN Heterostructure Grown on Bulk GaN Substrates", E. Frayssinet, W. Knap, O. Lorenzini, M. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Gregory, S. Porowski, G. Simin, X. Hu, M. A. Khan, M. Shur, R. Gaska, and D. Maude, to be published in September 2000 issue of Applied Physics Letters.

  9. "Optical Band Gap Formation in AllnGaN Alloys", G. Tamulaitis, K. Kazlaukas, S. Jursenas, M. A. Khan, J. W. Yang, J. Zhang, G. Simin, A. Zukauskas, M. S. Shur, and R. Gaska, to be published in October 2, 2000 issue of Applied Physics Letters

  10. "Diffraction of Guided Optical Waves by Surface Acoustic Waves in GaN", R. Rimeika, D. Ciplys, R. Gaska, J. W. Yang, M. A. Khan, M. S. Shur, and E. Towe, Applied Physics Letters, 77 (4), 480-482 (2000).

  11. "Transient Processes in AlGaN/GaN Heterostructure Field Effect Transistors", S. L. Rumyantsev, M. S. Shur, R. Gaska, M. A. Khan, G. Simin J. Yang, N. Zhang, S. DenBaars, and U. K. Mishra, Electronics Letters, 36 (8), 757-759 (2000).

  12. "GaN-AlGaN Heterostructure Field effect Transistors Over Bulk GaN Substrates", M. A. Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, G. Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, and M. S. Shur, Applied Physics Letters, 76 (25), 3807-3809 (2000).

  13. "Piezoresistive Effect in Metal-Semiconductor-Metal Structures on p-type GaN", R. Gaska, M. S. Shur, A. D. Bykhovski, J. W. Yang, M. A. Khan, V. V. Kaminski, and S. M. Soloviov, Applied Physics Letters, 76, (26), 3956-3958 (2000).

  14. "SiO2 Passivated Lateral Geometry GaN transparent Schottky Barrier Detectors", V. Adivarahan, G. Simin, J. W. Yang, A. Lunev, M. A. Khan, M. Pala, M. Shur, and R. Gaska, Applied Physics Letters 77 (6), 863-865 (2000).

  15. "Effect of Metallization on Surface Acoustic Wave Velocity in GaN-on-Sapphire Structure", D. Ciplys, R. Rimeika, R. Gaska, M. S. Shur, M. A. Khan and J. W. Yang, Applied Physics Letters, 36 (6) 591-592 (2000).

  16. "Accumulation Hole Layer in p-GaN/AlGaN Heterostructures", M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, G. Simin and M. A. Khan, Applied Physics Letters, 76 (21), 3061-3063 (2000).

  17. "AlGaN-GaN-InAlGaN Induced Base Transistor", M. Shur, R. Gaska, A. Bykhovski, M. A. Khan, and J. W. Yang", Applied Physics Letters, 76 (22), 3298-3300 (2000).

  18. "Propagation of Guided Optical Waves in Thick GaN Layers Grown on (0001) Sapphire", D. Ciplys, R. Gaska, M. S. Shur R. Rimeika, J. W. Yang and M. A. Khan, Applied Physics Letters, 76 (16), 2232-2234 (2000).

  19. "Dynamic Behavior of Hot Electron-Hole Plasma in Highly Excited GaN Epilayers", S. Juršenas, G. Kurilcik, G. Tamulaitis, A. Žukauskas, R. Gaska, M. S. Shur, M. A. Khan, and J. W. Yang, Applied Physics Letters, 76 (17), 2388-2390 (2000).

  20. "Low-Frequency Noise in AlGaN/GaN MOS-HFETs", N. Pala, R. Gaska, S. Rumyantsev, M. S. Shur, M. A. Khan, X. Hu, G. Simin, and J. Yang, Electronics Letters, 36 (3), 268-270 (2000).

  21. "Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates", J. W. Yang, A. Lunev, G. Simin, A. Chitnis, M. Shatalov and M. A. Khan, J. E. Van Nostrand, R. Gaska, Applied Physics Letters, 76 (3), 273-275 (2000).

  22. "AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistor", M. A. Khan, X. Hu, G. Simin, A. Lunev, and J. Yang, R. Gaska and M. S. Shur, IEEE Electron Device Letters, 21 (2), 63-65, (2000).

  23. "Low-frequency noise in AlGaN/GaN HFETS on SiC and Sapphire Substrates", S. Rumyantsev, M. E. Levinshtein, R. Gaska, M. S. Shur, J. W. Yang and M. A. Khan, Journal of Applied Physics, 87 (4), 1849-1854 (2000).

  24. "Lattice and Energy Band Engineering in AlInGaN/GaN Heterostructures", M. A. Khan , J. W. Yang, G. Simin, R. Gaska, M. S. Shur, Hans-Conrad zur Loye, G. Tamulaitis, A. Zukauskas, D. J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, Applied Physics Letters, 76 (9), 1161-1163 (2000).

  25. "Enhancement Mode AlGaN/GaN HFET with Selectively Grown P-N Junction Gate", X. Hu, G. Simin, J. Yang M. A. Khan, R. Gaska, and M. S. Shur, Electronics Letters, 36 (8), 753-754 (2000).

  26. "Piezoelectric Doping in AlInGaN/GaN Heterostructures", M. A. Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, and A. Bykhovsky, Applied Physics Letters, 75 (18), 2806-2808, (1999).

  27. "Heating of Photogenerated Electrons and Holes in Highly Excited GaN Epilayers", G. Tamulaitis A. Žukauskas, J. W. Yang and M. A. Khan, M. S. Shur and R. Gaska, Applied Physics Letters, 75 (15), 2277-2279 (1999).

  28. "Microwave Simulation of the Performance of High Power of AlGaN/GaN Heterostructure Field Effect Transistors", J. Deng, B. Ińiguez, M. S. Shur, R. Gaska, M. A. Khan, and J. W. Yang, Physica Status Solidi, (a), 176, 205-208 (1999).

  29. "Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructures", M. A. Khan, J. W. Yang, G. Simin, Hans zur Loye, R. Bicknell-Tassius, R. Gaska, M. S. Shur, G. Tamulaitis, and A. Zukauskas, Physica Status Solidi, (b), 216, (1), 477-480 (1999).

  30. "Optical Guided Modes and Surface Acoustic Waves in GaN Grown on (0001) Sapphire Substrates", M. A. Khan, R. Rimeika, D. Ciplys, R. Gaska, and M. S. Shur, Physica Status. Solidi. (b), 216, (1), 477-480 (1999).

  31. "Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates", S. Rumyantsev, M. E. Levinshtein, R. Gaska, M. S. Shur, M. A. Khan, J. W. Yang, G. Simin, A. Ping and T. Adesida, Physica Status Solidi, (a), 176, 201-204 (1999).

  32. "Hot Electrons and Holes in Highly Photoexcited GaN Epilayers", A. Zukauskas, G. Tamulaitis, R. Gaska, M. S. Shur, M.A. Khan, and J. W. Yang , Physica Status Solidi (b) 216, 495-499 (1999).

  33. "Finite-Temperature Band-Gap Renormalization in Highly Photoexcited GaN Epilayers", A. Zukauskas, S. Jursenas, G. Kurilcik, G. Tamulaitis, M. S. Shur, R. Gaska, J. W. Yang, and M. A. Khan, Physica Status Solidi (b), 216, 501-504 (1999).

  34. "Low-Frequency Noise in n-GaN with High Electron Mobility", M. E. Levinshtein and S. L. Rumyantsev, D. C. Look, R. J. Molnar, M. A. Khan, G. Simin, V.Adivarahan, and M. S. Shur", Journal of Applied Physics, 86, (9), 5075-5078, 1999.

Conference Presentations 1999-2000

  1. "Lateral Transparent Schottky Barrier UV Detectors With Low Leakage", G. Simin, M. A. Khan, J. W. Yang, A. Lunev, V. Adivarahan, N. Pala, M. Shur, and R. Gaska, Photonics West, CA, January 2000.

  2. "AlGaN/GaN MOSHFET Devices", M. Asif Khan, WOCSEMMAD '00, San Diego, CA, February 20-24, 2000.

  3. "Pulsed Lateral Epitaxial Overgrowth of GaN", M. Asif Khan, Q. Fareed, The 6th Wide Bandgap III-Nitride Workshop, Richmond, VA, March 12-15, 2000.
    "AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor", M. A. Khan, X. Hu, G. Simin, A. Lunev, and J. W. Yang, Materials Research Society, Spring 2000 Meeting, San Francisco, CA, April 24-28, 2000.

  4. "Vertically conducting light emission devices on SiC substrates" M. Asif Khan, 42nd Electronics Materials Conference, Denver, CO, June 21-23, 2000.

  5. "Polarization Effect on Chemical and Optical Properties of AllnGaN Heterostructures", M. A. Khan, Polarization Effects on Semiconductors Workshop, Glacier National Park, MT, August 27-31, 2000.

  6. "Pulsed MODVD Technique for Lateral Overgrowth of GaN on SiC with Conducting Buffer Layers", Q. Fareed, J. W. Yang, J. Zhang, V. Adivarahan, and M. A. Khan, International Workshop on Nitride Semiconductors, Nagoya, Japan, September 24-27, 2000.

  7. "Optical Properties of AllnGaN Alloys and AllnGaN/InGaN Multiple Quantum Wells", J. Zhang, J. W. Yang, G. Simin, M. Shatalov, M. A. Khan, G. Tamulaitis, K. Kazlauskas, S. Juršenas and Žukauska, International Workshop on Nitride Semiconductors, Nagoya, Japan, September 24-27, 2000.

  8. "Quaternary AllnGaN-InGaN MQW Based Vertically Conducting Light Emitting Diodes on SiC", International Workshop on Nitride Semiconductors, V. Adivarahan, A. Chitnis, M. Shatalov, A. Lunev, J. W. Yang, G. Simin, M. A. Khan, R. Gaska, and M. S. Shur, Nagoya, Japan, September 24-27, 2000.

  9. "Large Periphery AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates", X. Hu, A. Tarakji, G. Simin, J. W. Yang, M. A. Khan, R. Gaska, and M. S. Shur, International Workshop on Nitride Semiconductors, Nagoya, Japan, September 24-27, 2000.

  10. "Selective Area Growth and Improved p-contacts to GaN for Bipolar Device Applications", G. Simin, M. A. Khan, J. Yang, A. Lunev, V. Chaturvedi, X. Hu, M. Shur and R. Gaska, MRS Fall Meeting, Boston, MA, November 30-December 3, 1999.

  11. "AlGaN-GaN-AlGaN Induced Base Transistor", A. D. Bykhovski, M. S. Shur, R. Gaska, M. A. Khan, and J. W. Yang, MRS Fall Meeting, November 30-December 3, Boston, MA 1999.

  12. "Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?", J. Deng, R. Gaska, M. S. Shur, M. A. Khan, and J. W. Yang, MRS Fall Meeting, November 30-December 3, Boston, MA 1999.

  13. "Low-Frequency Noise in AlGaN/GaN Heterostructures on SiC and Sapphire Substrates", N. Pala, R. Gaska, M. Shur, J. W Yang and M. A. Khan, MRS Fall Meeting, November 30-December 3, Boston, MA 1999.

  14. "Strain Modulation and Piezoelectric Doping in AlInGaN/GaN Heterostructures", J. W. Yang, M. A. Khan, G. Simin, R. Gaska, A. Bykhovski, and M. S. Shur, ICSCRM99, NC, 1999.

  15. "Low Temperature Deposited Non-Single Crystal Layers of AlxGa1-xN for Device Applications", M. A. Khan, J. Yang, V. Adivarahan, G. Simin, R. Gaska and M. S. Shur, ICSCRM99, NC, 1999.

  16. "Electron-Hole Plasma in GaN-Quantum Wells under High Optical Excitation", G. Tamulaitis, S. Juršenas, G. Kurilcik, A. Žukauskas, R. Gaska, M. S. Shur, J. W. Yang and M. A. Khan, ICSCRM99, NC, 1999.

  17. "Low-Resistivity Pd/Au Ohmic Contacts to p-GaN for Heterostructure Bipolar Transistors and Light Emitting Diodes", A. Lunev, V. Chaturvedi, A. Chitnis, Grigory Simin, J. Yang, M. A. Khan, R. Gaska, and M. S. Shur, ICSCRM99, NC, 1999.

  18. "Pyroelectric Effect in AlN Films", E. A. Yigit, M. S. Shur, R. Gaska, J. W. Yang, and M. A. Khan, ICSCRM99, NC, 1999.

  19. "Surface Acoustic Waves in Free- and Metallized-Surface GaN", R. Gaska, D. Ciplys, R. Rimeika, M. A. Khan, J. W. Yang and M. S. Shur, ICSCRM99, NC, 1999.

  20. "Accumulation Hole Layer in Inverted p-GaN/Al0.15Ga0.85N Heterostructures", M. S. Shur, R. Gaska, J. W. Yang, G. Simin, and M. A. Khan, ICSCRM99, NC, 1999.

  21. "Characterization of Thick GaN Layers Using Guided Optical Waves", D. Ciplys, R. Rimeika., M. Asif Khan, J. W.Yang, R. Gaska and M. S. Shur, ICSCRM99, NC, 1999.

  22. "Photoluminescence Dynamics in Strained AlGaN/GaN Quantum Wells", R. Gaska, M. S. Shur, A. Bykhovski, G. Tamulaitis, A. Zukauskas, S. Jursenas, G. Kurilcik, M. A. Khan, and J. W. Yang, ICNS3, Montpellier, France, July 5-9 (1999).

  23. "A Very Strong Piezoresistive Effect in p-GaN", R. Gaska, M. S. Shur, M. A. Khan, J. W. Yang, V.V. Kaminski, and S. M. Soloviov, ICNS3, Montpellier, France, July 5-9 (1999).

  24. "Strain Energy Band Engineering in AlInGaN/GaN Heterostructure Field Effect Transistors", M. A. Khan, M. S. Shur, and R. Gaska, 29th European Microwave Conference (GaAs'99), Munchen, 4-8 October, 1999 (Invited).

  25. "1/f Noise in AlGaN/GaN HEMTs", S. Rumiantsev, M. Levinshtein, R. Gaska, M. S. Shur, M. A. Khan, and J. W. Yang, WOCSEMMAD'99, New Orleans, LA, February 22-24, 1999.

  26. "AlInGaN/GaN Heterostructures: New Approach to Strain Energy Band Engineering (SEBE)", M. A. Khan, J. W. Yang, H. zur Loye, G. Simin, R. Gaska, M. S. Shur, G. Tamulaitis, and A. Zukauskas, WOCSEMMAD'99, New Orleans, LA, February 22-24, 1999.

  27. "Piezoresistive effect in p-GaN", R. Gaska, M. S. Shur, A. Bykhovski, J. W. Yang, M. A. Khan, V. V. Kaminskii, and S. Soloviov, WOCSEMMAD'99, New Orleans, LA, February 22-24, 1999.

  28. "Effects of Surface Roughness on Electron Mobility in AlInGaN/GaN Heterostructures", A. Khan, R. Gaska, J. W. Yang, G. Simin, A. Bykhovski and M. S. Shur, EMC'99, Santa Barbara, CA, 1999.

  29. "Two Dimensional Electron Gas Density and Polarisation Effects in AlInGaN/GaN Heterostructures", J. W. Yang, M. A. Khan, R. Gaska, G. Simin, A. Bykhovski and M. S. Shur, EMC'99, Santa Barbara, CA, 1999.

 
 
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