1997-1998 Publications

  1. "High Power Microwave 0.25 Micron Doped Channel GaN/AlGaN Heterostructure Field Effect Transistor", Q. Chen, R. Gaska, M. A. Khan, M. S. Shur, G. J. Sullivan, A. L. Saylor, and J. A. Higgins, IEEE Electron Device Letters, 19,(2), 44 - 46, Feb. (1998). 

  2. "Measurement of Phonon-Exciton Dephasing Rate in GaN on Sapphire by Degenerate Four-Wave Mixing", S. Pau, J. Kuhl, F. Scholz, V. Haerle, M. A. Khan and C. J. Sun, Applied Physics Letters, 72, (5), 557-559, Feb. 1998. 

  3. "Schottky Barrier Photodetectors based on AlGaN", A. Osinsky, S. Gangopadhyay, B. W. Lim, M. Z. Anwar, M. A. Khan, D.V. Kuksenkov, and H. Temkin, Applied Physics Letters, 72, (6), 742-744, Feb. 1998. 

  4. "Electron Transport in AlGaN-GaN Heterostructures Grown on 6H-SiC Substrates", R. Gaska, J. W. Yang, A. Osinsky, Q. Chen and M. A. Khan, A. O. Orlov, G. L. Snider, and M. S. Shur, Applied Physics Letters, 72, (6), 707-709, Feb. 1998. 

  5. "Low-Frequency Noise and Performance of GaN p-n Junction Photodetectors", D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, Journal of Applied Physics, 83, (4), 2142-2146, February 1998. 

  6. "DC and Microwave Performance of High-Current AlGaN/GaN Heterostructure Field Effect Transistors Grown on p-Type SiC Substrates", A. T. Ping, Q. Chen, J. W. Yang, M. Asif Khan, and I. Adesida, IEEE Electron Device Letters, 19, (2), 54-56, February 1998. 

  7. "Optical Modes Within III-Nitride Multiple Quantum Well Microdisk Cavities", R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoc, and M. A. Khan, Applied Physics Letters, 72, (13), 1530-1532, March 1998. 

  8. "Prebreakdown and Breakdown Effects in AlGaN/GaN Heterostructure Field Effect Transistors", G. Gradinaru, M. A. Khan, M. C. Kao, T. S. Sudarshan, Q. Chen, and J. Yang, Applied Physics Letters, 72, (12), 1475-1474, March 1998. 

  9. "Origin of conductivity and Low-Frequency Noise in Reverse-Biased GaN p-n Junction", D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, Applied Physics Letters, 72, (11), 1365-1367, March 1998. 

  10. "Effects of Persistent Photoconductivity on the Characteristic Performance of an AlGaN/ GaN Heterostructure Ultraviolet Detector", J. Z. Li, J. Y. Lin, H. X. Jiang, and M. A. Khan, Applied Physics Letters, 72 (22), 2868-2870, June 1998. 

  11. "GaN and AlGaN Ultraviolet Photodetectors", M. S. Shur and M. A. Khan, Academic Press, Semiconductors and Semimetals, T. Moustakos and J. Pankove, Editors (1998), to be published. 

  12. "GaN-based Devices for Electronic Applications", M. A. Khan and M. S. Shur, in Proceedings of ESSDERC '97, September 1997, to be published. 

  13. "High Power 0.25 micron GaN/AlGaN Heterostructure Field Effect Transistor: A Microwave Performance Simulation", J. Deng, B. Iniguez, M. S. Shur, Q. Chen, J. W. Yang, R. Gaska, M. A. Khan, and G. J. Sullivan, submitted for publication.

  14. "GaN and AlGaN Ultraviolet Photodetectors", M. S. Shur and M. A. Khan, Academic Press, Semiconductors and Semimetals, 57, 407-439, T. Moustakos and J. Pankove, Editors (1998).

  15. "GaN-based Devices for Electronic Applications", M. A. Khan and M. S. Shur, in Proceedings of ESSDERC '97, September 1997, to be published 1998.

  16. "Novel High Power AlGaN/GaN HFETs on SiC substrates", R. Gaska, J. Yang, A. Osinsky, M. A Khan, and M. S. Shur, IEDM-97 Technical Digest, 565-568, December, 1997.

  17. "Electron Transport in AlGaN-GaN Heterostructures Grown on 6H-SiC Substrates", R. Gaska, J. W. Yang, A. Osinsky, Q. Chen and M. Asif Khan, A. O. Orlov, G. L. Snider, and M. S. Shur, Applied Physics Letters 72, (6), 707-709, Feb. 1998. 

  18. "GaN-based Pyroelectric and Piezoelectric Sensors, Semiconductor Homo- and Hetero-Device Structures", M. S. Shur, A. D. Bykhovski, R. Gaska, and M A. Khan, Colin Wood, Editor, Academic press, 1999, to be published. 

  19. J. Q. Lu, M. S. Shur, R. Weikle, and M. I. Dyakonov, and M. A. Khan, "Detection of Microwave Radiation by Electronic Fluid in AlGaN/GaN High Electron Mobility Transistors," in Proceedings of Sixteenth Biennial Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, New York, Aug. 4-6 (1997), pp. 211-217, IEEE ISBN Number 0-7803-3970-3 

  20. R. Gaska, J. W. Yang, A. Osinsky, M. A. Khan, M. S. Shur, "Novel High Power AlGaN/GaN HFETs on SiC substrates," IEDM-97 Technical Digest, pp. 565-568, December, 1997 M. S. Shur and M. A. Khan, "AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors," Physica Scripta, vol. T69, pp. 103-107 (1997) 

  21. M. A. Khan, and Michael S. Shur, "GaN Based Transistors for High Temperature Applications, Materials Science and Engineering, B, Solid State Materials for Advanced Technology," 46/1-3 pp. 69-73 (1997) 

  22. M. A. Khan, Q. Chen, J. W. Yang, C. J. Sun, B. Lam, H. Temkin, J. Schetzina, and M. S. Shur, "UV, Blue And Green Light Emitting Diodes Based On GaN-InGaN Multiple Quantum Wells Over Sapphire and (111) Spinel Substrates," Materials Science and Engineering, B43, pp. 265-268 (1997) 

  23. A. D. Bykhovski, V. V. Kaminski, M. S. Shur, Q. C. Chen, M. A. Khan, "Pyroelectricity in Gallium Nitride Thin Films," Applied Physics Letters, November 18, 69(21), p. 3254-3256 (1996) 

  24. M. A. Khan, Q. Chen, J. W. Yang, C. J. Sun, B. Lam, M. Z. Anwar, M. S. Shur, H. Temkin, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, "Visible Light Emitters, Ultraviolet Detectors, and High-Frequency Transistors Based on III-N Alloys," (Invited.) The Physics of Semiconductors ed. by M. Scheffler and R. Zimmermann, pp. 3171-3178 (World Scientific, Singapore 1996) 

  25. M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. J. Schaff, and L. F. Eastman, "GaN Based Heterostructure for High Power Devices," Solid State Electronics, vol. 41, No. 10, pp. 1555-1559 (1997) 

  26. M. A. Khan, Q. Chen, J. W. Yang, M. Z. Anwar, and M. Blasingame, M. S. Shur, J. Burm and L. F. Eastman, "Recent Advances in III-V Nitride Electron Devices," IEDM-96 Technical Digest, Invited, December (1996) 

  27. Michael S. Shur and M. A. Khan, "Wide Band Gap Semiconductors. Good Results and Great Expectations," in the Proceedings of 23d International Symposium on GaAs and Related Compounds, St. Petersburg, Russia, Sep. 22-28, 1996, Institute Phys. Conference Series, No. 155, Chapter 2, pp. 25-32, M. S. Shur and R. Suris, Editors, IOP Publishing, London (1997) 

  28. C. J. Sun, M. Z. Anwar, Q. Chen, J. W. Yang and M. A. Khan, M. S. Shur, A. D. Bykhovski, Z. Liliental-Weber, M. Smith, J. T. Lin, and H. X. Xiang, "Quantum Shift of Band Edge Stimulated Emission in InGaN-GaN Multiple Quantum Well Light Emitting Diodes," Applied Physics Letters, 70 (22), pp. 2978-2980, June 2 (1997) 

  29. M. S. Shur and M. A. Khan, "GaN/AlGaN Heterostructure Devices: Photodetectors and Field Effect Transistors," MRS Bulletin, vol. 22, No. 2, pp. 44-50, Feb. (1997) M. A. Khan and M. S. Shur, "Recent Progress in AlGaN/GaN Based Optoelectronic Devices," in Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3006, Optoelectronics Integrated Circuits, Yoon-Soo Park and Ramu V. Ramaswamy, Editors, (1997), pp. 154-163

  30.  M. S. Shur, Q. Chen, J. W. Yang, R. Gaska, M. Blasingame, M. A. Khan, A. Ping, I. Idesida, V. P. Madangarli, and T. S. Sudarshan, "High Pinch-off Voltage AlGaN-GaN Heterostructure Field Effect Transistor," Proceedings of ISDRS-97, pp. 377-380, Charlottesville, VA, Dec. (1997) 

  31. Q. Chen, R. Gaska, M. A. Khan, M. S. Shur, A. Ping, I. Adesida, J. Burm, W. J.Schaff, and L. F. Eastman, "Microwave Performance of 0.25 micron Doped Channel GaN/AlGaN Heterostructure Field Effect Transistor at Elevated Temperatures," Electronics Letters, vol. 33, No. 7, pp. 637-639, March 27 (1997) 

  32. W. Knap, S. Contreras, H. Alause, C. Skiberbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. W. Yang, Q. Chen, M. A. Khan, M. Sadowski, S. Huant, F. J. W. Yang, M. Goiran, J. Leotin, and M. Shur, "Cyclotron Resonance and Quantum Hall Effect Studies of the Two-Dimensional Electrons Confined at the GaN-AlGaN Interface," Applied Physics Letters, 70 (16), pp. 2123-2125, April (1997) 

  33. J. Burm, K. Chu, W. J. Schaff, L. F. Eastman, M. A. Khan, Q. Chen, J. W. Yang, and M. S. Shur, "0.12-µm Gate III-V Nitride HFET's with High Contact Resistances," IEEE Electron Device Letters, vol. 18, No. 4, pp. 141-143, April (1997) 

  34. R. Gaska, Q. Chen, J. W. Yang, A. Osinsky, M. A. Khan, and M. S. Shur, "High Temperature Performance of AlGaN/GaN HFETs on SiC Substrates," IEEE Electron Device Letters, vol. 18, No. 10, pp.492-494, October 1997

  35. R. Gaska, Q. Chen, J. W. Yang, A. Osinsky, M. A. Khan, M. S. Shur, A. Ping, and I. Adesida, "AlGaN/GaN Heterostructure FETs with Offset Gate Design," Electronics Letters, 33, No. 14, pp. 1255-1257, 3 July (1997)

  36. A. Osinsky, S. Gangopadhyay, R. Gaska, B. Williams, M.A. Khan, D. Kuksenkov, H. Temkin, "Low Noise p-p-n GaN Ultraviolet Photodetectors," Applied Physics Letters, 71 (16), pp. 2334-2336, October 20, 1997.

  37. Q. Z. Liu, L.S. Yu, F. Deng, S.S. Lau, Q. Chen, J.W. Yang, and M.A. Khan, "Study of contact formation in AlGaN/GaN heterostructures," Applied Physics Letters, 71 (12), pp. 1658-1660, September 22, 1997.

  38. M. Smith, J.Y. Lin, H.X. Jiang and M. Asif Khan, "Room temperature intrinsic optical transition in GaN epilayers: The band-to-band versus excitonic transitions," Applied Physics Letters, 71, (5), pp. 635-637, August 4, 1997.

  39. R.D. Vispute, V. Talyansky, R.P Sharma, S. Choopun, M. Downes, T. Venkatesan, K.A. Jones, A.A. Iliadis, M. Asif Khan, and J.Y. Yang, "Growth of epitaxial GaN films by pulsed laser deposition," Applied Physics Letters, 71 (1), pp. 102-104, July 7, 1997.

  40. M. Smith, J.Y. Lin, H.X. Jiang, A. Khan, Q. Chen, A. Salvador, A. Botchkarev, W. Kim, and H. Morkoc, "Exciton-phonon interaction in InGaN/GaN and GaN/AlGan multiple quantum wells," Applied Physics Letters, 70 (21) pp. 2882-2884, May 26, 1997.

  41. Q. Chen, J.W. Yang, A. Osinsky, s. Gangopadhyay, B. Lim, M.Z. Anwar, M. Asif Khan, D. Kuksenkov, and H. Temkin, "Schottky barrier detectors on GaN for visible-blind ultraviolet detection," Applied Physics Letters, 70 (17), pp. 2277-2279, April 28, 1997.

  42. C.J. Sun, J.W. Yang, B.W. Lim, Q. Chen, M. Zubair Anwar, M. Asif Khan, A. Osinsky, H. Temkin, J.F. Schetzina, "Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates," Applied Physics Letters, 70 (11), pp. 1444-1446, March 17, 1997.

  43. H.X. Jiang, J.Y. Lin, M. Asif Khan, Q. Chen, and J.W. Yang, "Surface emission of InXGa1-xN epilayers under strong optical excitation," Applied Physics Letters, 70 (8), pp. 984-986, February 24, 1997.

  44. J.Z. Li, J.Y. Lin, H.X. Jiang, M. Asif Khan, and Q. Chen, "Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure," Journal of Applied Physics, 82 (3), pp. 1227-1229, August 1, 1997.

  45. B.W. Lim, S. Gangopadhyay, J.Y. Yang, A. Osinsky, Q. Chen, M.Z. Anwar, and M.A. Khan, "GaN Schottky barrier photodiode array for visible-blind imaging," Electronics Letters, Vol 33, No 7, pp. 633-634, March 27, 1997.

  46. M. F. MacMillan, L. L. Clemen, R. P. Devaty, W. J. Choyke, M. Asif Khan, J. N. Kuznia, and S. Krishnankutty, "Cathodoluminescense of AlN-GaN Short Period Superlattices" Journal of Applied Physics, Vol. 80, (4), pp. 2378-2382, August 1996

  47. M. F. MacMillan, R. P. Devaty, W. J. Choyke, M. Asif Khan, and J. Kuznia, "Infrared Reflectance of GaN-AlGaN short-period superlattices films," Journal of Applied Physics, Vol. 80, (4), pp. 2372-2377, August 1997

 
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