Alexander Bolotnikov

Background: 

Alexander V. Bolotnikov joined Professor Sudarshan’s research team in September 2003 as a Graduate Research Assistant. His credentials include a Diploma of Specialization in Electrical Engineering from Taganrog State University of Radio Engineering, Russia (1995). Currently he is pursuing PhD in Electrical Engineering in USC. During work in the SiC Research Lab at USC A. Bolotnikov has acquired experience and knowledge in SiC material growth and SiC device design, fabrication and characterization.

Research:

     Alexander Bolotnikov’s research is focused on study of Al and B diffusion in SiC and development of diffusion technology to fabricate SiC PiN diodes with low forward voltage drop and high blocking voltage. Also local diffusion of B and Al has been developed and implemented for the formation of diffused guard ring termination of power devices.  Another important project he is presently conducting is a lateral epitaxial overgrowth (LEO) of SiC films and its implementation for defect reduction in SiC epilayers. At present, Alexander Bolotnikov has authored/coauthored 2 peer-reviewed articles in the major scientific journals, such as, Journal of Applied Materials ( USA ), and Material Science Forum ( Switzerland ) and presented the results of his research at a number of the national and international conferences.