Professor T.S. Sudarshan

 

 

CONTACT INFORMATION

    Office: Swearingen Center, Room 3A71
    Phone Number: (803) 777-7302
    Fax Number: (803) 777-8045
    Email: sudarsha@engr.sc.edu

EDUCATION

  • Ph. D., Electrical Engineering (High Voltage Electrical Engr.), University of Waterloo, Ontario, October 1974. Thesis title: Flashover of Solid Insulators in Vacuum.
  • M. A. Sc., Electrical Engineering (High Voltage Engineering) University of Waterloo, Ontario, Canada, August 1972, Thesis title: Field Enhancement Due to Solid Insulators Subjected to High DC Stresses in Vacuum.
  • M. Sc., Physics (Solid state), University of Mysore, Mysore, India, June, 1970.
  • B. Sc., (Physics, Mathematics, and Chemistry), University of Bangalore, Bangalore, India, May 1968.

SPECIALIZATIONS AND RESEARCH INTERESTS

 

  • Novel techniques of growth of silicon carbide (SiC) bulk and epitaxial films
  • surface modification to produce porous SiC
  • SiC material and device processing – wafering, surface polishing, oxidation, mask technology, dopant diffusion, and metalization
  • Fabrication and characterization of SiC high power Schottky and pn diodes
  • Novel defect characterization methods for wide bandgap semiconductors. High field effects in SiC-based electronic materials and devices
  • High power solid-state switches; electron emission from thin films, as cold cathodes, for applications in field emission displays
  • Microspacer insulation for flat panel displays
  • Solid, liquid and gas insulated systems for high voltage power apparatus, underground power cable, overhead transmission systems and pulsed power systems
  • Surface flashover of solid dielectrics and photoconducting materials in high vacuum and compressed gas systems
  • Fast high voltage and current diagnostics, and low light level imaging; electric field studies using numerical techniques
  • Insulator degradation and aging, coronas and arcs, power system protection.

 

EXPERIENCE

 

  • 1987 to present: Professor, University of South Carolina. Research activity in the areas of (1) SiC bulk growth, wafering, and surface preparation; defect characterization; CVD film growth; defect characterization; porous SiC; SiC material and device processing; device fabrication and characterization. (2) Surface flashover mechanisms along insulators and photoconducting materials in high vacuum for nanosecond excita­tions. (3) Insulator surface flashover mechanisms in vacuum and compressed gases for DC, 60 Hz and slow pulsed excitations. (4) Design of high current, high voltage crowbar switch for fusion applications. (5) Study of the characteristics of high vacuum and compressed gas gaps used as high voltage, high current switching elements. (6) Coating of metal surfaces with liquid metals for applications in high power switches. (7) Application of plasmas to metal surface coatings and alloying. (8) Characterization of the degradation of Barium Titanate insulated capacitors.
  • 1982 - 1987: Associate Professor, 1979 - 1981, Assistant Professor of Electrical and Computer Engineering, University of South Carolina.
  • 1974 - 1979: Research Officer in the Electrical Engineering Division of National Research Council of Canada, Ottawa. Responsible for (1) the study of the deteri­oration of polymeric materials used in underground power cables, (2) developing additives to retard the degradation of polyethylene, to improve the overall relia­bility of the power system, (3) developing techniques to test insulating materials for resistance to discharges, (4) studying accelerated aging of insulating materi­als, and (5) studying the characteristics of insulating materials at cryogenic tem­peratures.
  • 1971 - 1974: Research assistant at the University of Waterloo, Ontario, Canada. Research work included a study of mechanisms involved in the flashover of insulators in vacuum subject to high stresses. Measurement of electric fields were made in the proximity of insulators due to positive charging caused by HV stress. Suitable insulator coatings, which reduced the charging, were developed, improving breakdown performance by nearly 300%. The study also involved high-speed photography of electric arcs along insulator surfaces using an image converter camera, electron microprobe analysis of microparticles, and computer simulation of prebreakdown phenomena.

 

HONORS AND AWARDS

 

  • College of Engineering and Information Technology Research Achievement Award 2001
  • Carolina Distinguished Professor 1995 to present
  • Carolina Research Professor 1986 to 1994
  • Alpha chapter of Mortar Board Excellence in Teaching Award Nov. 1991
  • College of Engineering Research Achievement Award 1991
  • Carolina Education Foundation Award for Research in Science and Engineering 1990
  • Sigma Chi Outstanding Teacher of the Year 1985
  • Outstanding Young Men of America 1982
  • Who is Who in Technology 1980
  • Council of Scientific and Industrial Research Fellowship 1970-1971
  • India National Merit Scholarship 1968-1970

 

PROFESSIONAL AND HONOR ORGANIZATION MEMBERSHIPS, ACTIVITIES

 

  • Senior Member IEEE, Eta Kappa Nu, Tau Beta Pi, Sigma Xi.
  • Reviewer of proposals to NSF and member of NSF panel review of SBIR proposals

 

KEY RESEARCH ACCOMPLISHMENTS

 

  • 1976 Development of Cr2O3 coatings to inhibit failure of insulators at high voltages. This coating is widely used in electron accelerators, e-beam lithography equipment, and in faint object spectrograph in the Hubble space telescope. IEEE Trans. on Electrical Insulation
  • 1984 Wetting of metal surfaces with a liquid metal. Widely used in high current switches. J. Appl. Phys
  • 1987 Novel insulator designs. Widely used high energy particle accelerators. IEEE Trans. on Electrical Insulation
  • 1988 Development of a new model of high field insulator failure phenomenon. J. Appl. Phys
  • 1989 Novel design of high voltage feedthrough. Used in INTELSAT traveling wave tubes. IEEE Trans. on Electrical Insulation
  • 1993 First ultra high voltage Si photoconducting Switch. IEEE Trans. on Electrical Insulation
  • 1997 Development of a technique to heal micropipe defects in SiC wafers. Intl Conf on SiC, Sweden
  • 1999 Development of High Field micro-spacer for Flat Panel Emitter Displays. SPIE Electronic Imaging
  • 2000 First to perform selective doping of SiC by boron diffusion. Mat. Sci. Forum
  • 2001 First to produce defect-free SiC by local epitaxy. J. Crystal Growth
  • 2001 First to demonstrate co-diffusion of Al and B into SiC. J. Appl. Phys
  • 2002 Developed vacuum gap design rules for vacuum microelectronic applications. IEEE-DEI
  • 2002 First to develop a non-destructive wafer-scale method of delineating defects in SiC. APL (Patent application submitted)
  • 2003 Demonstrated formation of nano-porous structures in SiC wafers. Electrochemical and Solid State Letters
  • 2003 First to demonstrate measurement of semi-insulating SiC resistivity using removable contacts. J Electronic Materials; Demonstrated non-degradable SiC pin diodes (Provisional patent)

 

PATENTS

 

  • US Patent No. 4,780,176 - A Method of Wetting a Metal with Liquid Metals by a Plasma Interaction Technique.
  • US Patent Application 10/413,657: A system and method for detecting defects in semiconductor wafers, X. Ma and T. S. Sudarshan, submitted April 2003.
  • Provisional patent application, A Method for Eliminating Forward Voltage Drift in Diodes, S. Soloviev, Y. Gao, and T.S. Sudarshan, submitted May 2003.
  • Provisional patent application, New biomaterial for bone implant applications, N. Sethuraman, J. Morris, and T.S. Sudarshan, submitted Sept. 2003.

 

BOOK CHAPTERS

 

    1. T.S. Sudarshan, "Vacuum Insulation," Wiley Encyclopedia of Electrical and Electronic Engineering, invited chapter, 1999.
    2. I. Khlebnikov, D. Cherednichenko, Y. Khlebnikov, and T.S. Sudarshan, “Silicon Carbide Technology: Status and Future,” International School on Crystal Growth of Technologically Important Electronic Materials (ISCGTIEM), Mysore, India January 2003.
    3. T.S. Sudarshan, “Materials Science and Engineering of Bulk Silicon Carbides” in: SiC Power Materials and Devices, ed. Dr. Z.C. Feng, Springer-Verlag invited chapter, 2004.
    4. T.S. Sudarshan, D. Cherednichenko, and R. Yakimova, “Growth of Silicon Carbide,” in: Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials, ed. Dr. P. Capper, Wiley and Sons, invited chapter, 2004.

 

RESEARCH PUBLICATIONS

 

A.1. Archival Publications – Recent Publications: Since 2000

 

    137. “Biocompatibility of silicon carbide in mice - a short communication,” with J. Morris, A. Bogart, S. Soloviev, YH An, XD Li, and N. Sethuraman. J. Biomed. Mater. Res (Part B, Applied Biomaterials). to be submitted, March 2004.
    136. “The Potential of Silicon Carbide as an Orthopaedic Biomaterial,” A. Bogart, J. Morris, YH An, and XD Li. J. Biomed. Mater. Res (Part B, Applied Biomaterials), to be submitted, March 2004.
    135. “Analysis of In-Situ Off-Axis Seeding Surface Preparation Conditions for SiC PVT Growth,” with R.V. Drachev, and D.I. Cherednichenko. Journal of Crystal Growth. 265: 179-183, 2004.
    134. “Biocompatibility of silicon carbide implanted in mouse subcutaneous tissue,” with J. Morris, A. Bogart, S. Soloviev, YH An, XD Li, and N. Sethuraman. MUSC Orthop J, Vol 7, in press, 2004.
    133. “Electron Beam Induced Current Observation of Dislocations in Diffused 4H-SiC P-N Diodes,” with S. Maximenko, S. Soloviev, and D. Cherednichenko. Applied Physics Letters, March 2004.
    132. “Nondestructive defect characterization of SiC substrates and epilayers,” with X. Ma. Journal of Electronic Materials, 33(5): 2004.
    131. "Forward voltage drop degradation in diffused SiC PIN diodes,” with S. Soloviev, D. Cherednichenko, Y. Gao, A. Grekov, and Y. Ma. J. Applied Physics, 95(8): 4376-4380, April 2004.
    130. “Influence of Structural Defects on the Polishing of Silicon Carbide Single Crystal Wafers,” with R. Bondokov and T. Lashkov. Japanese Journal of Applied Physics, 43(1): 43-49, 2004.
    129. “A non-destructive automated defect-detection system for silicon carbide wafers,” with T. Kubota, P. Talekar, X. Ma, and M. Parker, Machine Vision and Applications, 2003
    128. “Self-Congruent Process of SiC Growth by Physical Vapor Transport,” with D.I. Cherednichenko and R.V. Drachev. J. Crystal Growth, 262(1-4): 175-181, 2004.
    127. “Extended SiC Defects: Polarized Light Microscopy and SWBXT Ratification,” with X. Ma, M. Dudley, and W. Vetter. Jap J Appl Phys, 42: L1077-L1079, 2003.
    126. “Investigation of boron diffusion in 6H-SiC,” with Y. Gao and S.I. Soloviev. Applied Physics Letters, 83(5): 905-907, Aug. 2003.
    125. “Structural defects in 6H-SiC grown in prismatic directions using modified Lely method,” with M.A. Tchernov, A.S. Tregubova, M.P. Tsheglov, I.I. Khlebnikov, and Y.I. Khlebnikov. submitted to the Russian Journal of Solid State Physics
    124. “Influence of a diffraction vectors noncomplanarity on the double crystal rocking curves parameters,” with P.G. Muzykov, A.Y. Razumovsky, and M.A Tchernov. submitted to the Russian Journal of Plant Laboratory and Material Testing.
    123. “Electrical characterization of Ni/porous SiC/n-SiC structure,” with A. Grekov, S. Soloviev, and T. Das, Mat. Sci. For. 433-436: 419-422, 2003.
    122. “Non-destructive SiC Wafer Evaluation Based on an Optical Stress Technique,” with X. Ma, M. Parker, Y. Ma, and T. Kubota, Mat. Sci. For. 433-436: 361-364, 2003.
    121. "Graphitization of the seeding surface during the heating stage of SiC PVT bulk growth,” with R.V. Drachev, D.I. Cherednichenko, I.I. Khlebnikov, and Y.I. Khlebnikov, Mat. Sci. For. 433-436: 99-102, 2003.
    120. “High resistivity measurement of SiC wafers using different techniques,” with P.G. Muzykov, Y.I. Khlebnikov, S.V. Regula, and Y. Gao, Journal of Electronic Materials, 32(6): 505-510, 2003.
    119. “Structural and Electrical Characterization of Porous Silicon Carbide Formed in n-6H-SiC Substrates,” with S. Soloviev and T. Das, Electrochemical and Solid-State Letters, 6(2): 2003.
    118. “A Method for Defect Delineation in Silicon Carbide Using Potassium Hydroxide Vapor,” with R.T. Bondokov, I.I. Khlebnikov, T. Lashkov, E. Tupitsyn, G. Stratiy, and Y. Khlebnikov. Japanese Journal of Applied Physics, 41(12): 7312-7316, Dec. 2002.
    117. "Comparison of Figures-Of-Merit of N and P SiC Schottky Diodes at High Temperatures,” with M. Tarplee and V. Madangarli, Japanese Journal of Applied Physics 41: 7322-7326, Dec. 2002.
    116. "Surface Morphology of 6H-SiC after Thermal Diffusion," with Y. Gao and S. Soloviev, Journal of Electronic Materials, 31(5): 376, 2002.
    115. "Current-Voltage Characteristics of An Integrated Schottky Diode," with V. Madangarli and M. Tarplee, Solid State Electronics, 46(5): 753-757, May 2002.
    114. "Nondestructive Defect Delineation in SiC Wafers based on an Optical Stress Technique," with X. Ma and M. Parker, Applied Physics Letters, 80(18): May 2002.
    113. "High Field Insulation relevant to Vacuum Microelectronic Devices," with X. Ma and P.G. Muzykov, IEEE Trans. on Dielectrics and Electrical Insulation, 9(2): 216-225, April 2002.
    112. "Influence of crystal thickness on the SiC PVT growth rate," with D.I. Cherednichenko, Y.I. Khlebnikov, R.V. Drachev, and I.I. Khlebnikov, Mat. Sci. Forum, 389-393: 95-98, 2002.
    111. "Oxidation of porous 4H-SiC substrates" with S. Soloviev and T. Das, Mat. Sci. Forum, 389-393: 1113-1116, 2002.
    110. "Aluminum and boron diffusion into a-face SiC substrates, " with S. Soloviev, Y. Gao, Y. Khlebnikov, and I.I. Khlebnikov, Mat. Sci. Forum, 389-393: 557-560, 2002.
    109. "Edge Breakdown Issues in Field Emission Displays," with X. Ma, IEEE Transactions on Dielectrics and Electrical Insulation, 8(6): 1025-1028, December 2001.
    108. "Selective doping of 4H-SiC by co-diffusion of aluminum and boron," with Y. Gao and S. Soloviev, Journal of Applied Physics, 90(11): 5647-5651, Dec. 2001.
    107. "Design Rules for Field Plate Edge Termination in SiC Schottky Diodes," with M. Tarplee, Q. Zhang, and V. Madangarli, IEEE Trans. On Electron Devices, 48(10): 2659-2666, Oct. 2001.
    106. "The Influence of High-Temperature Annealing on SiC Schottky Diode Characteristics," with Q. Zhang, Journal of Electronic Materials, 30(11): 1466-70, July 2001.
    105. "Liquid phase silicon at the front of crystallization during SiC PVT growth," with R.V. Drachev, G.D. Stratiy, D.I. Cherednichenko, and I.I. Khlebnikov, Journal of Crystal Growth, 233: 541-547, July 2001.
    104. "Planar 4H- and 6H-SiC p-n Diodes Fabricated by Selective Diffusion of Boron,” with Y. Gao and S. Soloviev, Solid State Electronics, 45: 1987-1990, June 2001.
    103. “Local Epitaxy and Lateral Epitaxial Overgrowth of SiC,” Y. Khlebnikov, I. Khlebnikov, and M. Parker, J. of Crystal Growth, 233: 112-120, June 2001.
    102. "Triple-Junction Issues In Field Emission Displays," with X. Ma, Journal of Vacuum Science and Technology, B19(3): 683-686, May/June 2001.
    101. "Lateral Current Spreading in SiC Schottky Diodes Using Metal Overlap Edge Termination," with Q. Zhang, Solid State Electronics 45: 1847-1850, May 2001.
    100. "Forward Characteristics of P+PN+ and P+NN+ diodes of 6H-SiC," with Q. Zhang, Solid State Electronics 45: 1559-1563, April 2001.
    99. "Dislocations as a source of micropipe development in the growth of silicon carbide,” with D.I. Cherednichenko, Y. I. Khlebnikov, I. I. Khlebnikov, and R.V. Drachev, Journal of Applied Physics., 89(7): 4139-41, April 1, 2001.
    98. "Boron diffusion into 6-H-SiC through graphite mask," with S. Soloviev and Y. Gao, Journal of Electronic Materials, 30(3): 224-227, Mar. 2001.
    97. "SiC Planar Mos-Schottky Diodes: A High Voltage Schottky Diode with Low Leakage Current,” with Q. Zhang and V. Madangarli, Solid State Electronics 45: 1085-1089, March 2001.
    96. "Comparison of Current–Voltage Characteristics of N and P Type 6H-SiC Schottky Diodes," with Q. Zhang, V. Madangarli, and M. Tarplee, Journal of Electronic Materials, 30(2): 196-201, 2001.
    95. "Doping of 6H-SiC by Selective Diffusion of Boron," with S.I. Soloviev and Y. Gao, Applied Physics Letters, 77(24): 4004-06, Dec. 2000.
    94. "Prebreakdown and Breakdown Investigation of Needle-Plane Vacuum Gaps in the Micron/Submicron Regime," with P.G. Muzykov and X. Ma, J. of Vacuum Science and Technology B, 18(3): 1222-26, May/June 2000.
    93. "High Field Performance of Thin-Wall Spacers Bridging Two Thin-film Electrodes," with X. Ma, IEEE Transaction Dielectrics and Electrical Insulation, 7(2): 277-82, April 2000.
    92. “An Analytical Study of the SiC Growth Process from Vapor Phase,” with D. Cherednichenko and I. Khlebnikov, Material Science Forum, 338-342: 35-38, 2000.
    91. “Damage-Free Surface Modification of Hexagonal Silicon Carbide Wafers,” with T.C. Chandler and M.B. Lari, ibid., pp. 845-48.
    90. “Selective Doping of 6H-SiC by Diffusion of Boron,” with S. Soloviev, Y. Gao, and I. Khlebnikov, ibid., pp. 945-48.
    89. “Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrates with Micropipes,” with I. Khlebnikov, D. Cheredinchenko, and Y. Khlebnikov, ibid., pp. 59-62.
    88. "Lateral Current Spreading in SiC Schottky Diodes Using Field-Plate Edge Termination," with Q. Zhang, V. Madangarli, and M. Tarplee, ibid., pp. 1223-26.
    87. "Computer Simulation of P-Type SiC Schottky Diode Using ATLAS," with M. Tarplee, V. Madangarli, and Q. Zhang, ibid., pp. 1231-34.
    86. "Characterization of SiC Using Raman Spectroscopy," with J C. Burton, F.H. Long, Y. Khlebnikov, and M. Parker, ibid., pp. 615-18.

 

A.2. Archival Publications – Past Publications

 

    85. “Structural Defect Visualization and Oxide Breakdown in SiC Wafers after Thermal Oxidation," with S. Soloviev, I. Khlebnikov, and V. Madangarli, Material Science and Engineering B 61-62: 464-467, June 1999.
    84. "High Field Characteristics of Dielectric Spacers in Thin-Film Electrode Vacuum Gaps," with X. Ma, J. of Vacuum Science and Technology B, 17 (4): 1580-84, July/August 1999.
    83. "High Field Breakdown of Narrow Quasi Uniform Field Gaps in Vacuum," with P.G. Muzykov, X. Ma, and D.I. Cherednichenko, J. Applied Physics, 85(12): 8400-04, 15 June, 1999.
    82. "High Field Characteristics of Thin-Film Metal Electrodes," with X. Ma and P.G. Muzykov, J. Vac. Sci. Technol. B, 17(2): 769-72, Mar./Apr. 1999.
    81. “Correlation between Oxide Breakdown and Defects in SiC Wafers,” with S. Soloviev, I. Khlebnikov, and V. Madangarli, Journal of Electronic Materials, 27(10): 1124-1127, October, 1998.
    80. “Prebreakdown and Breakdown Investigation of Broad Area Electrodes in the Micrometric Regime,” with X. Ma, Journal of Vacuum Science and Technology B, p. 1174-1179, May/June 1998.
    79. "Surface Flashover Effects in AlGaN/GaN HFETs," with G. Gradinaru, M.A. Khan, Q. Chen, and J. Yang, Electronic Letters, 34(9): 927-928, April 1998.
    78. "High Field Breakdown Characteristics of Micrometric Gaps in Vacuum," with X. Ma, J. Vacuum Sci. Technol., B16(2): 745-48, Mar/Apr. 1998.
    77. "Prebreakdown and Breakdown Effects in AlGaN//GaN Heterostructure Field Effect Transistors," with G. Gradinaru, M.A. Khan, N.C. Kao, Q. Chen, and J. Yang, Applied Physics Letters, 72(12): 1475-1477, March 1998.
    76. "Dielectric Surface Flashover in Vacuum: Experimental Design Issues," with C.R. Li, IEEE Trans. on Dielectrics and Elec. Insul., invited article, 4(5): 657-62, Oct. 1997.
    75. “Electrode Architecture related to Surface Flashover of Solid Dielectrics in Vacuum," IEEE Trans. on Dielectrics and Elec. Insul., invited article, 4(4): 374-81, Aug. 1997.
    74. "High Field/High Temperature Performance of Semi-Insulating Silicon Carbide," with G. Gradinaru, G. Korony, and W. Mitchel, Diamond and Related Materials 6, ELSEVIER Science S.A., p. 1392-95, 1997.
    73. "Metalorganic Chemical Vapor Deposition-Grown AlN on 6H-SiC for Metal-Insulator-Semiconductor Device Applications," with C.C. Tin, Y. Song, T. Isaacs-Smith, and V. Madangarli, J. Electronic Materials, 26(3): 212-16, 1997.
    72. "Electrical Properties of High Resistivity 6H-SiC under High Temperature/High Field Stress," with G. Gradinaru, Appl. Phys. Lett., 70 (6): 735-737, Feb. 1997.
    71. "High Field Flashover Strength of Intrinsic Gallium Nitride and Aluminum Nitride in Vacuum," with M.A. Khan, Q. Chen, and G. Gradinaru, Appl. Phys. Lett., 69(2): 254-256, July 1996.
    70. "Surface Filamentation in Semi-Insulating Silicon," with G. Gradinaru, J. Appl. Phys., 79(11): 8557-8564, June 1996.
    69. “High Field Activation of Micropipes in High Resistivity Silicon Carbide,” with G. Gradinaru, G. Korony, W. Mitchel, and R.H. Hopkins, Journal of Electronic Materials, 25(5): 893-898, May 1996.
    68. "Influence of Contact Architecture on the High Field Characteristics of Planar Silicon Structures," with V.P. Madangarli, et. al., IEEE Trans. Electron. Devices, 43(5): 793-799, May 1996.
    67. "Spark-Gap Atomic Emission Microscopy," with P.G. van Patten, J.D. Noll, and M.L. Myrick, J. Phys. Chem., 100: 3646-51, 1996.
    66. "Characteristics of Preflashover Light Emission from Dielectric Surfaces in Vacuum," with C.R. Li, IEEE Trans. on Electrical Insulation, 2(3): 483-91, June 1995.
    65. “High Field Effects in High Resistivity Silicon Carbide in Lateral Configurations,” with G. Gradinaru, G. Korony, W. Mitchel, and R.H. Hopkins, Appl. Phys. Lett., 67(23): 3435-3437, Dec. 1995.
    64. "Bulk Breakdown of High Field Silicon-Dielectric Systems," with G. Gradinaru, IEEE Trans. on Electron Devices, 42(6): 1156-65, June 1995.
    63. "Characteristics of Preflashover LIght Emission from Dielectric Surfaces in Vacuum," with C.R. Li, IEEE Trans. on Electrical Insulation, 2(3): 483-91, June 1995.
    62. "Preflashover Luminosity along an Alumina/Vacuum Interface," with T. Asokan, IEEE Trans. on Electrical Insulation, 1(6): 1180-85, Dec. 1994.
    61. "Dielectric Surface Preflashover Processes in Vacuum," with C.R. Li, J. Applied Phys., 76(6): 3313-3320, 15 September 1994.
    60. "The Influence of Semiconductor and Dielectric Properties on Surface Flashover in Silicon-Dielectric Systems," with G. Gradinaru and V. Madangarli, IEEE Trans. on Electr. Dev., 41(7): 1233-38, July 1994.
    59. "Influence of Surface Microstructure on the Electric and Spectroscopic Characteristics of Dielectric Surface Flashover," with Li and Sundararaman, IEEE Trans. on Electrical Insulation, 1(2): 315-22, 1994.
    58. "An Analysis of the Scanning Electron Microscope Mirror Image Based on the Dielectric Surface Microstructure," with T. Asokan, J. of Appl. Phys., 75(8): 3715-22, April 15, 1994.
    57. "Effect of Residual Stress on the Surface Flashover of Alumina Ceramics," with T. Asokan, IEEE Trans. on Electr. Insul., 1(1): 97-105, Feb. 1994.
    56. "Measurement of Space Charge Field in Transformer Oil using Kerr Effect," with S. M. Mahajan, Ibid., pp. 63-70.
    55. "Spectroscopic Observations of Surface Flashover across an Insulator in Vacuum under Pulsed Excitation," with Li and Sundararaman, IEEE Trans. on Plasma Sci., 21(5): 598-04, Oct. 1993.
    54. "Optimization of Test Procedure to Improve Insulator Performance under High Electric Stress," with T. Asokan, IEEE Trans. on Elec. Insul., 28(4): 545-554, August 1993.
    53. "Dependence on the Surface Flashover Properties of Alumina on the Polishing Abrasive Parameters," with T. Asokan, IEEE Trans. on Electrical Insulation, 28(4): 535-544, Aug. 1993.
    52. "Surface Flashover in Silicon-Vacuum Systems," with G. Gradinaru and V. Madangarli, IEEE Trans. on Electrical Insulation, 28(4): 555-565, Aug. 1993.
    51. "Insulator Surface Flashover Conditioning: A Streak Photographic Investigation," with T. Asokan, IEEE Trans. on Plasma Science, 21(3): 298-304, June 1993.
    50. "Prebreakdown and Breakdown Phenomena in High-Field Semiconductor-Dielectric Systems," with G. Gradinaru, J. Appl. Phys., 73(11): 7643-66, June 1993.
    49. "Spectral Nature of Luminosity Associated with the Surface Flashover Process," with T. Asokan, IEEE Trans. on Electrical Insulation, 28(2): 192-99, April 1993.
    48. "Streak Photography of the Dynamic Electrical Discharge Behavior along Insulator Surfaces in Vacuum," with T. Asokan, IEEE Trans. on Electrical Insulation, 28(1): 101-110, February 1993.
    47. "New Results on Surface Flashover in Silicon-Dielectric Systems," with G. Gradinaru and V. P. Madangarli, Optically Activated Switching II, January 1993.
    46. "Computational Analysis of the Surface Permittivity and Charging of Dielectrics using the ‘SEM Mirror Technique’," with J. Wang, IEEE Trans. on Electrical Insulation, 27(6): 1127-35, Dec. 1992.
    45. "Role of Coulombic Centers on the Insulator Surface Breakdown Characteristics," with Asokan, IEEE Trans. on Electrical Insulation, 27(5): 1040-49, Oct. 1992.
    44. "Time-Resolved Prebreakdown X-ray Emission from Polycrystalline Alumina Bridged Vacuum Gaps for Impulse Stresses", with Bommakanti, J. of Applied Physics, 71(5): 2181-88, March 1992.
    43. "Effect of Test Environment on the Surface Breakdown Characteristics of Photoconducting Silicon," with Asokan, Optically Activated Switching II, SPIE, 1632: 231-41, Jan. 1992.
    42. "On the negative differential resistance effect in the high field semiconductor-dielectric systems," with G. Gradinaru and V.P. Madangarli, Applied Physics Letters, 61(1): 55-57, January 1992.
    41. "A Photoelectronic Source for Electron Avalanche Measurements," with Mahajan, Review of Scientific Instruments. 62(10): 2495-96, Oct. 1991.
    40. "Flashover in Wide Band-Gap High Purity Insulators: Methodology and Mechanisms," with C. Le Gressus, C. Blaise, et. al., J. of Applied Physics. 69(9): 1-10, May 1991.
    39. "Protection of Fast and Sensitive Preamplifiers," with Mahajan, Review of Scientific Instruments. 62(4): 1102-03, April 1991.
    38. "Measurement of Electrical and Optical Avalanches Near Solid Insulators in High pressure (up to 0.3 MPa) Nitrogen Gas," with S. M. Mahajan, J. of Applied Physics, 69(5): 2877, March, 1991.
    37. "New Findings of Pulsed Surface Breakdown Along Silicon in Vacuum," with S.H. Nam, IEEE Trans. on Electron Devices, 37(12): 2466-71, Dec. 1990.
    36. "Influence of Mechanical Grinding and Polishing Operations of Brittle Polycrystalline Alumina on the Pulsed Surface Flashover Performance," with Bommakanti, J. of Applied Physics, 67(11): 6991-97, 1990.
    35. "Trap Dominated Breakdown Processes in an Insulator Bridged Vacuum Gap," with Bommakanti, J. of Applied Physics, 66(5): 2091-99, Sept. 1989.
    34. "Observation of Three Distinct Phases Leading to Pulsed Surface Flashover Along Silicon without end contacts in Vacuum," with S.H. Nam, IEEE Trans. on Electrical Insulation, 24(6): 979-83, 1989.
    33. "Avalanches near a solid insulator in nitrogen gas at atmospheric pressure," with S. M. Mahajan, J. of Applied Physics, 66(3): 1095-1102, Aug. 1989.
    32. "Studies on the self and laser initiated discharge characteristics at dielectric/gas interfaces," with K. Foo, IEEE Trans. on Plasma Science, 17(4): 588-94, Aug. 1989.
    31. "Analysis and Design of a Traveling Wave Tube Feedthrough," with R. Bommakanti and R. Peters, IEEE Trans. on Electrical Insulation, 24(6): 1053-62, 1989.
    30. "DC Surface Flashover Mechanism Along Solids in Vacuum, Based on a Collision Ionization Model," with Jaitly, J. of Applied Physics, 64(7): 3411-18, Oct. 1988.
    29. "X-ray Emission and Prebreakdown Currents in Plain and Dielectric Bridged Vacuum Gaps Under DC Excitation," with Jaitly, IEEE Trans. on Electrical Insulation, EI-23(2): 231-42, April 1988.
    28. "In-Situ Insulator Surface Charge Measurements in Dielectric Bridged Vacuum Gaps Using an Electrostatic Probe," with Jaitly, IEEE Trans. on Electrical Insulation, EI-23(2): 261-73, April 1988.
    27. "45 Degree Insulator Surface Flashover," with Arnold, Thompson, and Dougal, IEEE Trans. on Electrical Insulation. EI-23(1): 17-25, Feb. 1988.
    26. "Novel Insulator designs for Superior DC Hold-off in Bridged Vacuum Gaps," with Jaitly, IEEE Trans. on Electrical Insulation. EI-22(6): 801-10, Dec. 1987.
    25. "Degradation due to Wet Hydrogen Firing on the High Voltage Performance of Alumina Insulators in Vacuum Applications," with Jaitly, Dougal and Miller, IEEE Trans. on Electrical Insulation. EI-22(4): 447-52, Aug. 1987.
    24. "Partial Discharge Characteristics in Barium Titanate Multi-Layered Structures-- Effect of Material and Structural Parameters," with Chang, Thompson, Dougal, Chan and Rawal, IEEE Trans. on Electrical Insulation, EI-22(4): 489-95, Aug. 1987.
    23. "Swarm Parameters Along Gas-Solid Dielectric Interfaces," with Mahajan and Dougal, Electric Insulation and Dielectric Phenomena, IEEE 86CH23l5-0, pp. 558-63, Nov. l986.
    22. "Electro-Cathodoluminescence in Insulator Bridged Vacuum Gaps Under High Voltage Stress," with Jaitly, Journal of Applied Physics, 60(l0): 3711-l9, Nov. l986.
    21. Invited paper: “Mechanism of Surface Flashover Along Solid Dielectrics in Compressed Gases - A Review,” with Dougal. IEEE Digest of Literature on Dielectrics, published by the Electrical Insulation Society, EI-2l(5): 727-746, October l986.
    20. "A New Method for Etching Molybdenum," with M.H. Lim, and S. Goode, Journal Praktische Metallagraphie, West Germany, 23: 450-457, Sept. 1986.
    19. "Analysis of Electric Stress Distribution in Cavities Embedded Within Dielectric Structures," with Chang and Thompson, IEEE Trans. on Electrical Insulation, EI-21(2): 213-219, April 1986.
    18. "Chemical Etching of Molybdenum Using Nonaqueous Solvents," with Lim and Goode, Metal Finishing Journal, pp. 59-61, January 1986.
    17. "Pre-Breakdown and Breakdown Phenomena Along PMMA Surfaces in Vacuum and Nitrogen Gas Stressed by 60 Hz Voltages," with Lewis, Thompson, Lee and Dougal. IEEE Tr. on Electrical Insulation, EI-19(6): 512-518, December 1984.
    16. "Wetting of Metal Surfaces with a Liquid Metal Using a Plasma Interaction Technique," with M. H. Lim, et. al. J. of Vacuum Science and Technology, 2(4): 1503-1508, October 1984.
    15. "Wetting of Al Electrodes with Mercury," with M. H. Lim, et. al. Journal of Applied Physics, USA, 56(8): 2236-2240, Oct. 1984.
    14. "Breakdown Time of a Triggered Vacuum and Low-pressure Switch," with J.M. Wilson, J.E. Thompson and R.L. Boxman, IEEE Trans. on El. Insul., EI-l8(3): 238-242, June l983.
    13. "Predischarge Current Measurements in Vacuum Gaps Bridged with Plexiglas Insulators," with R. Lee, J.E. Thompson and G.R. Nagabhusana. IEEE Trans. on Elect. Insul., EI-l8(3): 280-286, June l983.
    12. “Vacuum Switch Trigger Delay Characteristics," with F.T. Warren, J.M. Wilson, and J.E. Thompson, Special Issue on Plasma Switches, IEEE Transactions on Plasma Science, PS-l0(4): 298-30l, Dec. l982.
    11. "Electrostatic Field Evaluation by the Electrolytic Tank Methods," with J. E. Thompson, K. Salisbury, L. Park, G. R. Nagabhusana, Ibid., pp. 374-78.
    10. "Predischarge Current Measurements and Optical Surface Field Measurements Associated with Insulator Surface Flashover," with R. Lee, H. Rhinehart, J.E. Thompson, Gaseous Dielectrics III, Pergamon Press, l982, pp. 349-55.
    9. "The Aging of Electrical Insulation at Cryogenic Temperatures," with R.J. Densley and A.T. Bulinski, IEEE Trans. on Electrical Insulation, EI-l5(2): 83-88, April l980.
    8. "The Effects of Water Immersion on the Electrical Properties of Miniature XLPE Cables," with R.J. Densley and A.T. Bulinski, Canadian Elec. Engr. J., 5(2): 14, l980.
    7. "Short-Term Electrical Insulating Characteristics of Polymeric Materials Immersed in Liquid Nitrogen," with A.T. Bulinski and R.J. Densley, IEEE Trans. on Electrical Insulation, EI-l4(4): 211-22l, Aug. 1979.
    6. "Micro-Particles Production in a Uniform Field Vacuum Gap with Solid Dielectric Spacer," with J.D. Cross, IEEE Trans. on Electrical Insulation, EI-l2(5): 376-77, October l977.
    5. "Prebreakdown Processes Associated with Surface Flashover of Solid Insulations in Vacuum," with J.D. Cross and K.D. Srivastava, IEEE Trans. on Electrical Insulation, EI-l2(3): 200-208, June l977.
    4. "The Effect of Chromium Oxide Coatings on Surface Flashover of Alumina Spacers in Vacuum," with J.D. Cross, IEEE Trans. on Electrical Insulation, EI-11(1): 32-35, l976.
    3. "High Speed Photography of Surface Flashover Under Direct Voltages in Vacuum," with J.D. Cross, IEEE Trans. on Electrical Insulation, EI-ll(1): 63-66, l976.
    2. "The Effect of Cuprous Oxide Coatings on the Surface Flashover of Dielectric Spacers in Vacuum," with J.D. Cross, IEEE Trans. on Electrical Insulation, EI-9(4): l46-l50, Dec. l974.
    1. "DC Electric Field Modifications Produced by Solid Insulators Bridging a Uniform Field Vacuum Gap," with J.D. Cross, IEEE Trans. on Electrical Insulation, EI-8: l22-l28, Dec. l973.

 

B.1. International Conference Proceedings: Since 2000

 

    124. “Fundamentals of SiC Bulk Growth Process and Defect Generation Mechanisms,” with R. Bondokov and A. Arulchakkaravarthi, International Workshop on Crystal Growth and Characterization of Technologically Important Materials, Chennai, India, February 2004.
    123. “Modification of 6H-SiC Surface Defect Structure during Hydrogen Etching,” with R. Bondokov, N. Tipirneni, and D. Cherednichenko, International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) Lyon, France, October 2003.
    122. “Formation of Stacking Faults in Diffused SiC p+/n-/n+ and p+/p-/n+ Diodes,” with S. Soloviev and D. Cherednichenko, ICSCRM2003 Lyon, France, October 2003.
    121. “Nondestructive defect characterization of SiC epilayers and its significance for SiC device research,” with X. Ma, ICSCRM2003 Lyon, France, October 2003.
    120. "Nondestructive Defect Delineation and Mapping in SiC Substrate and Epitaxial Film,” with X. Ma, Y. Gao, R. Bondokov, S. Maximenko, and T. Lashkov, American Physical Society Austin TX, March 2003.
    119. “Thermal stress as the major factor of defect generation in SiC during PVT growth,” with D.I. Cherednichenko, R.V. Drachev, I.I. Khlebnikov, and X. Deng, Mater. Res. Soc. Symp. 724: 131-136, 2003.
    118. “Influence of a diffraction vectors noncomplanarity on the double crystal rocking curves parameters,” with P. Muzykov, A. Razumovsky, and M. Tchernov. International Conference on Modern methods of diffraction data analysis (x-ray topography, diffraction, and electron microscopy) New Novgorod, Russia, p. 84-86, 18-20 November 2002.
    117. “Comparative characterization of differently oriented SiC wafers,” with P.G. Muzykov, Y.I. Khlebnikov, I.I. Khlebnikov, R.T. Bondokov, A.E. Grekov, S.I. Maximenko, and S.I. Soloviev, 44th Electronic Materials Conference (TMS), Santa Barbara, CA June 26, 2002.
    116. “Modeling of in-situ off-axis seeding surface preparation conditions for SiC PVT growth," with R.V. Drachev, D.I. Cherednichenko, and I.I. Khlebnikov, TMS, 2002.
    115. "Effect of substrate resistivity on formation of porous SiC," with T. Das, S. Soloviev, J. Bai, and P.I. Gouma, TMS, 2002.
    114. "High Voltage Engineering Issues in Field Emission Displays, " with X. Ma and P.G. Muzykov, 12th International Symposium on High Voltage Engineering, pp. 485-88, August 2001.
    113. "Surface Evaluation of 6H-SiC after Doping by Diffusion, " with Y. Gao, S. Soloviev, X. Wang, and C.C. Tin, Mater. Res. Soc. Symp. 680E: April, 2001.
    112. "Comparison of Current – Voltage Characteristics of N and P Type SiC Schottky Diodes," with Q. Zhang, V. Madangarli, and Y. Gao, Mater. Res. Soc. Symp. 640: H5.21, 2001.
    111. "Point and planar defect formation in SiC during PVT growth," with Y. Khlebnikov, R.V. Drachev, C.A. Rhodes, D.I. Cherednichenko, and I. Khelbnikov, Mater. Res. Soc. Symp. 640: H5.1, 2001.
    110. "Dislocation Content of Etch Pits in Hexagonal Silicon Carbide," with I. Khlebnikov, M.B. Lari, Y. Khlebnikov, and R.T. Bondokov, Mater. Res. Soc. Symp. 640: H5.4, 2001.
    109. "One of Many Sources of Defect Generation in SiC," with Y. Khlebnikov, I. Khlebnikov, and C. Wood, Mater. Res. Soc. Symp. 640: H5.3, 2001.
    108. "Al/Ni and Al/Ti Ohmic Contacts to p-type SiC Diffused Layer," with S. Soloviev, Y. Gao, J.R. Williams, and J. Crofton, Mater. Res. Soc. Symp. 640: H5.19, 2001.
    107. "Selective Doping of 4H-SiC by Aluminum/Boron Co-Diffusion," with Y. Gao, S.I. Soloviev, X. Wang, and C.C. Tin, Mater. Res. Soc. Symp. 640: H6.9, 2001.
    106. "High Field Insulation relevant to Vacuum Microelectronic Devices," with X. Ma and P.G. Muzykov, invited talk International Symposium on Discharges and Electrical Insulation in Vacuum, Xi'an, P.R. China, Oct. 2000.

 

B.2. International Conference Proceedings – Past Conferences

 

    105. “Thick Oxide Layers on N and P SiC Wafers By A Depo-Conversion Technique”, with Q. Zhang, I. Khlebnikov, V. Madangarli, and S. Soloviev, 1999 Spring MRS meeting, San Francisco, CA, April 1999.
    104. “High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination”, with Q. Zhang, S. Soloviev, V. Madangarli, and I. Khlebnikov, 1999 Spring MRS meeting, San Francisco, CA, April 1999.
    103. "Flashover Performance of Thin-Wall Spacers in Field Emission Displays," with X. Ma, IS&T/SPIE's Electronic Imaging 1999, San Jose, CA 25-29 January 1999.
    102. “Structural Defect Visualization and Oxide Breakdown in SiC Wafers after Thermal Oxidation”, with S. Soloviev, I. Khlebnikov, and V. Madangarli, 2nd European Conference on Silicon Carbide and Related Materials (ECSCRM’98), Montpelier, France, September, 1998.
    101. "Investigations to simulate the High Field Characteristics of Gate to Cathode gaps in FEDs," with P.G. Muzykov, X. Ma, and D.I. Cherednichenko, International Vacuum Microelectronics Conference, Asheville, North Carolina, p. 73-74, June, 1998.
    100. "High Field Characteristics of Thin Film Metal Electrodes Relevant to Field Emission Displays," with X. Ma and P.G. Muzykov, International Vacuum Microelectronics Conference, Asheville, North Carolina, p. 59-60, June 1998.
    99. "High Field Characteristics of Insulators in the Micrometric Regime Relevant to Field Emission Displays," with X. Ma, International Vacuum Microelectronics Conference, Asheville, North Carolina, p. 57-58, June 1998.
    98. "Bulk Breakdown in AlGaN/GaN HFETs," with G. Gradinaru and M.A. Khan, 1998 Spring Mat. Res. Soc. Symp. Proc., 512: 309-14, 1998.
    97. "A Technique for Rapid Thick Film SiC Epitaxial Growth," with I. Khlebnikov, V. Madangarli, and M. Capano, 1997 Fall MRS Symposium, Boston, Dec. 1-5, 1997.
    96. "SiC Epitaxial Growth on Carbon," with I. Khlebnikov and V. Madangarli, ibid.
    95. "Correlation between Oxide Breakdown and Defects in SiC Wafers," with S. Soloviev, I. Khlebnikov, and V. Madangarli, ibid., pp. 351-55.
    94. "Power Limitation due to Premature Breakdown in AlGaN/GaN HFETs," with G. Gradinaru and M.A. Khan, ibid.
    93. "Comparison of High Field Characteristics of SiO2 vs. AlN Gate Insulators in 6H SiC MOS Capacitors," with V.P. Madangarli and C.C. Tin, ibid., pp.345- 350.
    92. "The Response of High Voltage 4H-SiC P-N Junction Diodes to Different Edge Termination Techniques" with T.N. Oder, C.C. Tin, J.R. Williams, T. Issacs-Smith, and V. Madangarli, ibid., pp.101- 106.
    91. "Observation of Bulk Defects in SiC Crystals," with Y.I. Khlebnikov. International Semiconductor Device Research Symposium, Charlottesville, VA, Dec. 10-13, 1997.
    90. "High Pinch-off Voltage AlGaN-GaN Heterostructure Field Effect Transistor," with M.S. Shur, Q. Chen, J. Yang, R. Gaska, M.A. Khan, A. Ping, I. Adesida, and V.P. Madangarli, ibid., Dec. 1997.
    89. "Prebreakdown and Breakdown Characteristics of Micrometric Vacuum Gaps between Broad Area Electrodes," with M. McLester and X. Ma, IEEE Conf. on Elec. Insul. and Dielectric Phenomena, paper 7B-6, Minneapolis, MN, Oct. 1997.
    88. "High Field Breakdown Characteristics of Micrometric Gaps in Vacuum," with X. Ma and J.D. Kim, 10th Int. Vacuum Microelectronics Conference, Kyongju, Korea, Aug. 1997.
    87. “A Non-Destructive Technique For High Field Characterization Of Gate Insulators In SiC MOS Capacitors,” with V.P. Madangarli, Int. Conf. on SiC and III-N '97, Stockholm, Sweden, August 31st - September 5, 1997.
    86. “Rapid Anodic Oxidation Of 6H-SiC,” with Y. Khlebnikov, V.P. Madangarli, and M.A. Khan, Int. Conf. on SiC and III-N '97, Stockholm, Sweden, August 31st - September 5, 1997.
    85. “Thick Film SiC Epitaxy For ‘Filling Up’ Micropipes,” with I. Khlebnikov and V.P. Madangarli, Int. Conf. on SiC and III-N '97, Stockholm, Sweden, August 31st - September 5, 1997.
    84. "Minority Carrier Lifetime Measurements in 6H-SiC using the Photoconductive Decay Technique," with W. Zhou, I. Khlebnikov, M.A. Capano, and W.C. Mitchel, Int. Conf. on SiC and III-N '97, Stockholm, Sweden, August 31st - September 5, 1997.
    83. “Defect Formation during SiC Crystal Growth,” with I. Khlebnikov, Y. Khlebnikov, E. Solodovnik, and V. Madangarli, The 39th Electronic Materials Conference, Fort Collins, Colorado, 1997.
    82. "Surface Flashover and Preflashover Phenomena of Solid Dielectrics in Vacuum," T.S. Sudarshan, invited talk, XVII Int'l Symp. on Discharges and Electrical Insulation in Vacuum, Berkeley, CA, Volume I: 381-90, July 1996.
    81. "Electric Field Breakdown Mechanisms in High Power Epitaxial 4H-SiC p-n Junction Diodes," with C.C. Tin, V. Madangarli, E. Luckowski, J. Casady, T. Isaacs-Smith, J.R. Williams, R.W. Johnson, and G. Gradinaru. Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, Malaysia, 1996.
    80. "High Electric Field Breakdown of 4H-SiC PN Junction Diodes", with C.C. Tin, V. Madangarli, R. Hu, E. Luckowski, J. Casady, T. Isaacs-Smith, G. Gradinaru, and R.W. Johnson, Materials Research Society Symposium Proceedings, San Francisco, CA, 423: 111-115, April 1996.
    79. "Characterization of 4H-SiC MOS Capacitors By a Fast-Ramp Response Technique," with V.P. Madangarli, G. Gradinaru, C.C. Tin, R. Hu, and T. Isaacs-Smith, Materials Research Society Symposium, San Francisco, CA, 423: 99-104, April 1996.
    78. "High Field/High Temperature Performance of Semi-Insulating Silicon Carbide," with G. Gradinaru, et al., The 1st European Conference of Silicon Carbide and Related Materials (ECSRM), Heraclion, Crete, Greece, Oct. 6-7, 1996.
    77. "Electro-Optical Investigation of Micropipes in Silicon Carbide," with M. Helmi and G. Gradinaru, MRS 1996 Fall Meeting, Symposium E - Defects in Electronic Materials, Boston, MA, Dec. 2-6, 1996.
    76. "Temperature Effects in High Resistivity Silicon Carbide under Pulsed Electric Fields," with G. Gradinaru, et al., 3rd International High Temperature Electronics Conference (HiTEC'96), Albuquerque, NM, 1: 1125-1130, June 9-14, 1996.
    75. “4H SiC CVD Epitaxial Growth, In Situ Doping and P-N Junction Fabrication”, with R. Hu, C.C. Tin, E. Luckowski, T. Isaacs-Smith, J. Casady, V. Madangarli, and G. Gradinaru, American Physical Society (APS), St. Louis, Missouri, March 1996.
    74. "Electro-Thermal Stress and High Electric Field Effects in CVD-Grown 4H-SiC P-N Junction Diodes," with C.C. Tin, et al., 1st Conference on Commercial Development of Space, Albuquerque, NM, Jan. 7-11, 1996.
    73. “AlN for 6H-SiC Power Devices”, with C.C. Tin, Y. Song, T. Issacs-Smith, and V. Madangarli, AIP Conference Proceedings 387: 825, 1995.
    72. “A Compact Blumlein PFN with Optimized Performance Index,” with V. Madangarli, L. Liu, and C.R. Li, IEEE Pulse Power Conference, Albuquerque, NM, June 1995.
    71. “High Field Activation of Micropipes in High Resistivity Silicon Carbide,” with G. Gradinaru, G. Korony, W. Mitchel, and R.H. Hopkins, presented at 37th Electronic Material Conference (EMC) Charlottesville, VA, June 21-23, 1995.
    70. "Breakdown Damages of Photoconductive Silicon at High Fields," with G. Gradinaru and G. Korony, SPIE '94 - Optically Activated Switching IV, Boston, MA, Nov. 1994.
    69. "Insulating Properties of Semi-Insulating Silicon under High Field Excitation," with Gradinaru and Korony, 4th Int. Conf. on Properties and Applications of Dielectric Materials, Brisbane, Australia, July 1994.
    68. "High Field Microplasma Activity along Alumina Surfaces in Vacuum," with Li, Ibid.
    67. "Influence of Electrode Geometry on High Field Characteristics of Silicon Wafers used in PCPS Applications," with Madangarli, Gradinaru, and Korony, 21st IEEE Intl. Power Modulator Symposium, p. 128-31, June 1994.
    66. "High Field Limitations of Photoconductive Silicon," with Gradinaru and Korony, Ibid., pp. 104-07.
    65. "Investigations of High Field Effects in Silicon Carbide," with Gradinaru, Korony, Mitchel, and Nunnally. Proc. of Second Intl. High Temperature Electronics Conference, 2: 147-52, Charlotte, NC, June 1994.
    64. "Inhomogeneous Charging Characteristics of Polycrystalline Alumina Surfaces," with T. Asokan, Proc. 16th Int. Symp. on Discharges and Electrical Insulation in Vacuum, St. Petersburg, Russia, May 1994.
    63. "Influence of Dielectric Surface Properties on the Generation of Surface Microplasmas," with Li, Ibid.
    62. "Surface Flashover Sensitivity of Silicon in Vacuum," with Gradinaru and Korony, Ibid.
    61. "Spectroscopic Observations of Light Emission from Surface Flashover of Insulators under HV Stress," with Sundararaman, Li, and Goode, Annual Report, CEIDP (Poconos), p. 293-98, Oct. 1993.
    60. "Surface Flashover Performance of Chemically Etched Polycrystalline Alumina," with Mitra, ibid., p. 318-23.
    59. "Lattice Strain and its Relationship with the Surface Flashover Properties of Polycrystalline Alumina," with T. Asokan, 8th Int. Symp. on High Volt. Engr, Yokohama, Japan, 1: 315-18, Aug., 1993.
    58. "A Review on the Breakdown Limitation of Photoconductive Semiconductor Power Switches," with G. Gradinaru, 9th IEEE Pulsed Power Conference, Albuquerque, NM, pp. 645-49, June 1993.
    57. "Comparison of 'Dark' Current Characteristics of Cylindrical vs. Wafer Configurations of Photoconductive Silicon," with V.P. Madangarli, G. Gradinaru, C.R. Li, and M.R. Vaidya, ibid. p. 676.
    56. "The high field semiconductor-dielectric system, a special case of the classical two-insulator system," with G. Gradinaru,Annual Report, CEIDP, Victoria, Canada, p. 435-440, Oct. 1992.
    55. "Prebreakdown and Breakdown Luminosity of Large Band Gap Insulators under Pulsed Electrical Excitation," with T. Asokan, Ibid., p. 441-47.
    54. "Some particularities of the surface flashover in silicon-vacuum systems," with G. Gradinaru, and V.P. Madangarli, Proc. 15th Int. Symp. on Discharges and Electrical Insulation in Vacuum Darmstadt, Germany, p. 208-212, 1992.
    53. "Importance of Surface Treatment on the Surface Flashover Properties of Alumina Ceramics," with T. Asokan, Ibid., p. 181-85.
    52. "Test Procedure for Surface Flashover Investigations of Dielectric Materials," with T. Asokan, Ibid., p. 186-90.
    51. "Surface Permittivity Distinct from Bulk - Ramifications to Surface Breakdown: A Novel Concept," with J. Wang, Ibid.,pp. 232-36.
    50. "Streak Photography of insulator - surface flashover under pulsed excitation," with T. Asokan and G. Morris, Conf. record of 20th Intl. Power Modulator Symposium, p. 336-39, June 1992.
    49. "Improved Voltage Holdoff capability of Photo-conductive Silicon in SF6 environment," with V.P. Madangarli, G. Gradinaru and F.J. Zutavern, p. 297-300, Ibid.
    48. "A Physical model of the electrical breakdown in high field semiconductor-dielectric systems," with G. Gradinaru, p. 331-35, Ibid.
    47. "Photonic Emissions Associated with a Dielectric Surface under High Electric Stresses," Invited Paper, Interdisciplinary Conference on Dielectrics: Properties, Characterization, Applications, Organized by Societe Francaise Duvide, Antibes, France, p. 224-33, March 1992.
    46. "Validation of a Novel Electrode System to Study the Surface Flashover Phenomena of Insulators," with Asokan, Conf. on Electrical Insulation and Dielectric Phen., p. 76-82, Oct. 1991.
    45. "Pulsed Voltage Pre-breakdown Observations on Silicon in Vacuum," with Gamble and Faust, Conf. on Electrical Insulation and Dielectric Phen. p. 533-38, Oct. 1990.
    44. "An SEM Technique for Investigating the Insulating Properties of Dielectric Surfaces," with Bommakanti and Le Gressus, IEEE Conf. on Electr. Insuln. and Dielectric Phen., p. 219-24, Oct. 1990.
    43. "Pulsed Surface Flashover Performance of Monocrystalline SiO2 Bridged Vacuum Gaps," with Bommakanti and Le Gressus, IEEE XIV Int. Symp. on Discharges and Electrical Insulation in Vacuum, Santa Fe, NM, p. 377-80, Sept. 1990.
    42. "Flashover: Method of Investigations and Mechanisms," with C. Le Gressus and C. Blaise, Ibid., Santa Fe, NM, p. 299-306, Sept. 1990.
    41. "Effect of Leakage Current and Light Emission on Surface Flashover along Silicon in Vacuum," with S.H. Nam, 6th Intl. Symp. on High Voltage Engineering, New Orleans, Aug. 198,.
    40. "Simulation of Avalanches in a Composite Dielectric Medium," with Lam and Mahajan, Ibid
    39. "Influence of Insulator Surface Finish on the Pulsed Surface Flashover performance," with Bommakanti, 7th Pulsed Power Conference, Monterey, CA, p. 828-31, June 1989.
    38. "Pre-breakdown (leakage) and Breakdown Currents and Light Emission Related to Surface Flashover Along Silicon in Vacuum," with Nam, p. 362-64, Ibid.
    37. "Correlation Between Insulator Surface and dc Flashover Characteristics in Vacuum," IEEE Conf. on Electrical Insulation and Dielectric Phenomena, Ottawa, p. 53-59, Oct. 1988.
    36. "Observation of Three Distinct Phases Leading to Pulsed Surface Flashover Along Silicon in Vacuum," with S.H. Nam, 13th Int. Symp. on Discharges and Electrical Insulation in Vacuum, Paris, 1988.
    35. "Analysis and Design of a Traveling Wave Feedthrough-Electric Field and Insulator Material Considerations," with Bommakanti, 6th Pulse Power Conference, Arlington, VA, p. 200-204, June l987.
    34. "A Collision-Ionization Model for DC Surface Flashover Across Insulator-Vacuum Interfaces," with Jaitly, Ibid., p. 64-68.
    33. "Avalanches near a Dielectric Spacer in High Pressure Nitrogen Gas," with Mahajan, Ibid., p. 191-194.
    32. "Avalanches near a Dielectric Spacer in Nitrogen Gas," with Mahajan and Dougal, 5th Int. Symp. on Gaseous Dielectrics, Knoxville, May l987.
    31. "Invited paper: 45 Degree Insulator Surface Flashover; A Review and New Results," with Thompson, Arnold, and Dougal. 12th Int. Symp. on Discharges and Electrical Insulation in Vacuum. Israel, p. 23l-240, September 1986.
    30. "Flashover at Dielectric Interfaces: The interaction of Surface and Volume Processes," with Kraft and Dougal, IEEE Intl. Symposium on Electrical Insulation, Washington D.C., p. 230-234, June 1986.
    29. "A Model for Highly Overstressed Vacuum Breakdown," with Warren, Dougal and Thompson, 5th IEEE Pulsed Power Conference, Washington, June 1985.
    28. "Partial Discharge Characteristics in Layered Barium Titanate Structures," with D. Chang, R. Dougal, N. Chan, B. Rawal and J.E. Thompson, IEEE Conf. on Electrical Insulation and Dielectric Phenomena, p. 38-45, October 1984.
    27. "Measurements of Pulsed Insulator Surface Flashover in Vacuum," with P.A. Arnold, R.A. Dougal and J.E. Thompson, 11th Int. Symp. on Discharges and Electrical Insulation in Vacuum, East Germany, 1984.
    26. "Role of Surface Charging in the Breakdown of 45 Degree Insulators Subjected to High Voltage Nanosecond Excitation," with P. Arnold, C. Courtney, et al., IEEE Int. Symp. on Electrical Insulation, Montreal, Canada, p. 222-225, June 1984.
    25. "Breakdown Measurements for Overstressed Vacuum Gaps," with F.T. Warren, J.E. Thompson and R.A. Dougal, 16th Power Modulator Symposium, p. 79-70 June 1984.
    24. "Voltage Recovery Time of a Vacuum Switch," with C.L. McDonald, R.A. Dougal and J.E. Thompson, Ibid., p. 91-94.
    23. "Liquid Metal Wetting of Metals using a Plasma Discharge Technique," with Lim, Dougal and Hefley, IEEE Int. Conf. on Plasma Science, p. 19, May 1984.
    22. "The Simultaneous Measurement of Light and Current Pulses in Liquid Dielectrics," with M. Hanna, J.E. Thompson, and E. Forster, Conference on Electrical Insulation and Dielectric Phenomena, Pocconos, Pennsylvania, pp. 245-250, October l983.
    21. "Pre-breakdown and Breakdown Phenomena of Dielectric Surfaces in Vacuum and N2 Gas Stressed by 60 Hz Voltages," with J. Lewis, J.E. Thompson, D. Lee and R.A. Dougal, Conf. on Interfacial Phenomena in Practical Insulating Systems, NBS, Washington, DC, pp. 12-18, Sept. l9-20, l983.
    20. "Breakdown and Recovery Measurements for Low Pressure Pulsed Gaps," with T. Warren, J. Thompson, C. McDonald and R. Dougal. 4th Int. Pulsed Power Conference, Albuquerque, NM, p. 216-222, June l983.
    19. "Metal Ion Source for Metallic Surface Metallurgy," with Xu Zhong, et al., 10th International Symposium on Discharges and Electrical Insulation in Vacuum, Columbia, SC, p. 368-373, Oct. l982.
    18. "Current Evolution in a Pulsed Overstressed Radial Vacuum Gap," with F.T. Warren, J.E. Thompson and R.L. Boxman, 10th International Symposium on Discharges and Electrical Insulation in Vacuum, Columbia, SC, p. 43-53, Oct. l982.
    17. "Breakdown Time of a Triggered Vacuum and Low Pressure Switch," with JE. Thompson, J.M. Wilson and R.L. Boxman. 10th International Symposium on Discharges and Electrical Insulation in Vacuum, Columbia, SC, p. 268-27l, October l982.
    16. "Prebreakdown Conduction Measurements in Vacuum Gaps Bridged with Alumina Insulators," with R. Lee, G.R. Nagabhusana, and J.E. Thompson, IEEE Electrical Insulation Conference, Philadelphia, p. l03-l07, l982.
    15. "Surface Flashover Measurements in Vacuum and N2 Gas," with H. Rhinehart, J.E. Thompson, G.R. Nagabhusana, and R. Lee, Conference on Electrical Insulation and Dielectric Phenomena, Whitehaven, PA., p. 424-29, October l98l.
    14. "Triggered Vacuum Switch Breakdown and Conduction Characteristics," with F.T. Warren, J.M. Wilson and J.E. Thompson, 3rd Int. Pulsed Power Conference, Albuquerque, New Mexico, p. 36-39, June l98l.
    13. "Measurement of Surface Electric Fields and Charge for Pulsed 45 Insulators," with P. Arnold, D. Chang, and J.E. Thompson, 3rd Int. Pulsed Conference, Albuquerque, New Mexico, p. 24-27, June l98l.
    12. "The Role of Microparticles in Pulsed Vacuum Gap Breakdown," with M. Butner, J.E. Thompson and G. Wierzba, 9th Int. Symp. on Discharges and Electrical Insulation in Vacuum, Eindhoven, The Netherlands, Sept. l980.
    11. "Insulator Surface Flashover," with J.E. Thompson, J. Lin, M. Kristiansen, K. Mikkelson, H. Rhinehart, 9th Int. Symp. on Discharges and Electrical Insulation in Vacuum, Eindhoven, The Netherlands, Sept. l980.
    10. "Design of a Triggered Vacuum Gap," with J.E. Thompson, F.T. Warren, Jr. and R.G. Fellers, 14th Pulse Power Modulator Symposium, Orlando, Florida, p. 85-9l, June l980.
    9. "Electro-Optical Measurements of Insulator Preflashover Fields in Vacuum and Gas," with J.E. Thompson and H. Rhinehart, l980 Region 3 Conference and Exhibit, Nashville, Tenn., p. 296-99, April l980.
    8. "The Effects of Water Immersion, Voltage and Frequency on the Electric Strength of Miniature XLPE Cables," with J. Densley and A. Bulinski, Conf. on Electrical Insulation and Dielectric Phenomena, p. 469-479, l979.
    7. "Electro-Optical Measurement of Insulator Surface Preflashover Fields in Vacuum," with J.E. Thompson and D. Hyslop, Ibid. pp. 334-44.
    6. "The Prediction of Insulation Life at Cryogenic Temperatures," with A.T. Bulinski and R.J. Densley, Conference on Electrical Insulation and Dielectric Phenomena, p. 575-584, l979.
    5. "The Partial Discharge and Breakdown Characteristics of Insulating Tapes Immersed in Liquid Nitrogen," with A.T. Bulinski and R.J. Densley, l978, Conference on Electrical Insulation and Dielectric Phenomena, National Academy of Sciences-National Research Council, USA, p. 390-95, l978.
    4. "Partial Discharges in Polymeric Insulation Systems at Cryogenic Temperatures," with A.T. Bulinski, R.J. Densley, l978, IEEE International Symposium on Electrical Insulation, Philadelphia, USA, p. 36, June l978.
    3. "Some Results of Partial-Discharge Measurements During the Growth of Electrical Trees," with R.J. Densley, l977, Conference on Electrical Insulation and Dielectric Phenomena, National Academy of Sciences-National Research Council, USA, p. 330-338, l977.
    2. "Partial Discharge Characteristics of Solid Insulation Containing Spherical Cavities of Small Diameters," with R.J. Densley, l976, Conference on Electrical Insulation and Dielectric Phenomena, National Academy of Sciences-National Research Council, p. 28l-288, l976.
    1. "The Effect of Secondary Electron Emission on the Flashover of Solid Insulators in Vacuum," with J.D. Cross, IEEE Canadian Communications and Power Conference, Montreal, p. 245, Nov. l974.

 

 

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