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CONTACT INFORMATION
Office: Swearingen Center, Room 3A71
Phone Number: (803) 777-7302
Fax Number: (803) 777-8045
Email: sudarsha@engr.sc.edu
EDUCATION
- Ph. D., Electrical Engineering (High
Voltage Electrical Engr.), University of Waterloo, Ontario, October
1974. Thesis title: Flashover of Solid Insulators in Vacuum.
- M. A. Sc., Electrical Engineering
(High Voltage Engineering) University of Waterloo, Ontario, Canada,
August 1972, Thesis title: Field Enhancement Due to Solid Insulators
Subjected to High DC Stresses in Vacuum.
- M. Sc., Physics (Solid state),
University of Mysore, Mysore, India, June, 1970.
- B. Sc., (Physics, Mathematics, and
Chemistry), University of Bangalore, Bangalore, India, May 1968.
SPECIALIZATIONS AND RESEARCH INTERESTS
- Novel techniques of growth of silicon
carbide (SiC) bulk and epitaxial films
- surface modification to produce porous SiC
- SiC material and device processing –
wafering, surface polishing, oxidation, mask technology, dopant
diffusion, and metalization
- Fabrication and characterization of SiC high
power Schottky and pn diodes
- Novel defect characterization methods for
wide bandgap semiconductors. High field effects in SiC-based
electronic materials and devices
- High power solid-state switches; electron
emission from thin films, as cold cathodes, for applications in
field emission displays
- Microspacer insulation for flat panel
displays
- Solid, liquid and gas insulated systems for
high voltage power apparatus, underground power cable, overhead
transmission systems and pulsed power systems
- Surface flashover of solid dielectrics and
photoconducting materials in high vacuum and compressed gas systems
- Fast high voltage and current diagnostics,
and low light level imaging; electric field studies using numerical
techniques
- Insulator degradation and aging, coronas and
arcs, power system protection.
EXPERIENCE
- 1987 to present: Professor, University of
South Carolina. Research activity in the areas of (1) SiC bulk
growth, wafering, and surface preparation; defect characterization;
CVD film growth; defect characterization; porous SiC; SiC material
and device processing; device fabrication and characterization. (2)
Surface flashover mechanisms along insulators and photoconducting
materials in high vacuum for nanosecond excitations. (3) Insulator
surface flashover mechanisms in vacuum and compressed gases for DC,
60 Hz and slow pulsed excitations. (4) Design of high current, high
voltage crowbar switch for fusion applications. (5) Study of the
characteristics of high vacuum and compressed gas gaps used as high
voltage, high current switching elements. (6) Coating of metal
surfaces with liquid metals for applications in high power switches.
(7) Application of plasmas to metal surface coatings and alloying.
(8) Characterization of the degradation of Barium Titanate insulated
capacitors.
- 1982 - 1987: Associate Professor, 1979 -
1981, Assistant Professor of Electrical and Computer Engineering,
University of South Carolina.
- 1974 - 1979: Research Officer in the
Electrical Engineering Division of National Research Council of
Canada, Ottawa. Responsible for (1) the study of the deterioration
of polymeric materials used in underground power cables, (2)
developing additives to retard the degradation of polyethylene, to
improve the overall reliability of the power system, (3)
developing techniques to test insulating materials for resistance to
discharges, (4) studying accelerated aging of insulating materials,
and (5) studying the characteristics of insulating materials at
cryogenic temperatures.
- 1971 - 1974: Research assistant at the
University of Waterloo, Ontario, Canada. Research work included a
study of mechanisms involved in the flashover of insulators in
vacuum subject to high stresses. Measurement of electric fields were
made in the proximity of insulators due to positive charging caused
by HV stress. Suitable insulator coatings, which reduced the
charging, were developed, improving breakdown performance by nearly
300%. The study also involved high-speed photography of electric
arcs along insulator surfaces using an image converter camera,
electron microprobe analysis of microparticles, and computer
simulation of prebreakdown phenomena.
HONORS AND AWARDS
- College of Engineering and Information
Technology Research Achievement Award 2001
- Carolina Distinguished Professor 1995 to
present
- Carolina Research Professor 1986 to 1994
- Alpha chapter of Mortar Board Excellence in
Teaching Award Nov. 1991
- College of Engineering Research Achievement
Award 1991
- Carolina Education Foundation Award for
Research in Science and Engineering 1990
- Sigma Chi Outstanding Teacher of the Year
1985
- Outstanding Young Men of America 1982
- Who is Who in Technology 1980
- Council of Scientific and Industrial
Research Fellowship 1970-1971
- India National Merit Scholarship 1968-1970
PROFESSIONAL AND HONOR ORGANIZATION
MEMBERSHIPS, ACTIVITIES
- Senior Member IEEE, Eta Kappa Nu, Tau Beta
Pi, Sigma Xi.
- Reviewer of proposals to NSF and member of
NSF panel review of SBIR proposals
KEY RESEARCH ACCOMPLISHMENTS
- 1976 Development of Cr2O3 coatings to
inhibit failure of insulators at high voltages. This coating is
widely used in electron accelerators, e-beam lithography equipment,
and in faint object spectrograph in the Hubble space telescope. IEEE
Trans. on Electrical Insulation
- 1984 Wetting of metal surfaces with a liquid
metal. Widely used in high current switches. J. Appl. Phys
- 1987 Novel insulator designs. Widely used
high energy particle accelerators. IEEE Trans. on Electrical
Insulation
- 1988 Development of a new model of high
field insulator failure phenomenon. J. Appl. Phys
- 1989 Novel design of high voltage
feedthrough. Used in INTELSAT traveling wave tubes. IEEE Trans.
on Electrical Insulation
- 1993 First ultra high voltage Si
photoconducting Switch. IEEE Trans. on Electrical Insulation
- 1997 Development of a technique to heal
micropipe defects in SiC wafers. Intl Conf on SiC, Sweden
- 1999 Development of High Field micro-spacer
for Flat Panel Emitter Displays. SPIE Electronic Imaging
- 2000 First to perform selective doping of
SiC by boron diffusion. Mat. Sci. Forum
- 2001 First to produce defect-free SiC by
local epitaxy. J. Crystal Growth
- 2001 First to demonstrate co-diffusion of Al
and B into SiC. J. Appl. Phys
- 2002 Developed vacuum gap design rules for
vacuum microelectronic applications. IEEE-DEI
- 2002 First to develop a non-destructive
wafer-scale method of delineating defects in SiC. APL (Patent
application submitted)
- 2003 Demonstrated formation of nano-porous
structures in SiC wafers. Electrochemical and Solid State Letters
- 2003 First to demonstrate measurement of
semi-insulating SiC resistivity using removable contacts. J
Electronic Materials; Demonstrated non-degradable SiC pin diodes
(Provisional patent)
PATENTS
- US Patent No. 4,780,176 - A Method of
Wetting a Metal with Liquid Metals by a Plasma Interaction
Technique.
- US Patent Application 10/413,657: A system
and method for detecting defects in semiconductor wafers, X. Ma and
T. S. Sudarshan, submitted April 2003.
- Provisional patent application, A Method for
Eliminating Forward Voltage Drift in Diodes, S. Soloviev, Y. Gao,
and T.S. Sudarshan, submitted May 2003.
- Provisional patent application, New
biomaterial for bone implant applications, N. Sethuraman, J. Morris,
and T.S. Sudarshan, submitted Sept. 2003.
BOOK CHAPTERS
1. T.S. Sudarshan, "Vacuum
Insulation," Wiley Encyclopedia of Electrical and Electronic
Engineering, invited chapter, 1999.
2. I. Khlebnikov, D. Cherednichenko, Y.
Khlebnikov, and T.S. Sudarshan, “Silicon Carbide Technology: Status
and Future,” International School on Crystal Growth of
Technologically Important Electronic Materials (ISCGTIEM), Mysore,
India January 2003.
3. T.S. Sudarshan, “Materials Science and
Engineering of Bulk Silicon Carbides” in: SiC Power Materials and
Devices, ed. Dr. Z.C. Feng, Springer-Verlag invited chapter, 2004.
4. T.S. Sudarshan, D. Cherednichenko, and R.
Yakimova, “Growth of Silicon Carbide,” in: Bulk Crystal Growth
of Electronic, Optical and Optoelectronic Materials, ed. Dr. P.
Capper, Wiley and Sons, invited chapter, 2004.
RESEARCH PUBLICATIONS
A.1. Archival Publications – Recent
Publications: Since 2000
137. “Biocompatibility of silicon carbide in
mice - a short communication,” with J. Morris, A. Bogart, S.
Soloviev, YH An, XD Li, and N. Sethuraman. J. Biomed. Mater. Res
(Part B, Applied Biomaterials). to be submitted, March 2004.
136. “The Potential of Silicon Carbide as an
Orthopaedic Biomaterial,” A. Bogart, J. Morris, YH An, and XD Li. J.
Biomed. Mater. Res (Part B, Applied Biomaterials), to be
submitted, March 2004.
135. “Analysis of In-Situ Off-Axis Seeding
Surface Preparation Conditions for SiC PVT Growth,” with R.V.
Drachev, and D.I. Cherednichenko. Journal of Crystal Growth.
265: 179-183, 2004.
134. “Biocompatibility of silicon carbide
implanted in mouse subcutaneous tissue,” with J. Morris, A. Bogart,
S. Soloviev, YH An, XD Li, and N. Sethuraman. MUSC Orthop J,
Vol 7, in press, 2004.
133. “Electron Beam Induced Current
Observation of Dislocations in Diffused 4H-SiC P-N Diodes,” with S.
Maximenko, S. Soloviev, and D. Cherednichenko. Applied Physics
Letters, March 2004.
132. “Nondestructive defect characterization
of SiC substrates and epilayers,” with X. Ma. Journal of
Electronic Materials, 33(5): 2004.
131. "Forward voltage drop degradation in
diffused SiC PIN diodes,” with S. Soloviev, D. Cherednichenko, Y.
Gao, A. Grekov, and Y. Ma. J. Applied Physics, 95(8):
4376-4380, April 2004.
130. “Influence of Structural Defects on the
Polishing of Silicon Carbide Single Crystal Wafers,” with R.
Bondokov and T. Lashkov. Japanese Journal of Applied Physics,
43(1): 43-49, 2004.
129. “A non-destructive automated
defect-detection system for silicon carbide wafers,” with T. Kubota,
P. Talekar, X. Ma, and M. Parker, Machine Vision and Applications,
2003
128. “Self-Congruent Process of SiC Growth by
Physical Vapor Transport,” with D.I. Cherednichenko and R.V. Drachev.
J. Crystal Growth, 262(1-4): 175-181, 2004.
127. “Extended SiC Defects: Polarized Light
Microscopy and SWBXT Ratification,” with X. Ma, M. Dudley, and W.
Vetter. Jap J Appl Phys, 42: L1077-L1079, 2003.
126. “Investigation of boron diffusion in
6H-SiC,” with Y. Gao and S.I. Soloviev. Applied Physics Letters,
83(5): 905-907, Aug. 2003.
125. “Structural defects in 6H-SiC grown in
prismatic directions using modified Lely method,” with M.A. Tchernov,
A.S. Tregubova, M.P. Tsheglov, I.I. Khlebnikov, and Y.I. Khlebnikov.
submitted to the Russian Journal of Solid State Physics
124. “Influence of a diffraction vectors
noncomplanarity on the double crystal rocking curves parameters,”
with P.G. Muzykov, A.Y. Razumovsky, and M.A Tchernov. submitted to the
Russian Journal of Plant Laboratory and Material Testing.
123. “Electrical characterization of Ni/porous
SiC/n-SiC structure,” with A. Grekov, S. Soloviev, and T. Das, Mat.
Sci. For. 433-436: 419-422, 2003.
122. “Non-destructive SiC Wafer Evaluation
Based on an Optical Stress Technique,” with X. Ma, M. Parker, Y. Ma,
and T. Kubota, Mat. Sci. For. 433-436: 361-364, 2003.
121. "Graphitization of the seeding surface
during the heating stage of SiC PVT bulk growth,” with R.V. Drachev,
D.I. Cherednichenko, I.I. Khlebnikov, and Y.I. Khlebnikov, Mat. Sci.
For. 433-436: 99-102, 2003.
120. “High resistivity measurement of SiC
wafers using different techniques,” with P.G. Muzykov, Y.I.
Khlebnikov, S.V. Regula, and Y. Gao, Journal of Electronic
Materials, 32(6): 505-510, 2003.
119. “Structural and Electrical
Characterization of Porous Silicon Carbide Formed in n-6H-SiC
Substrates,” with S. Soloviev and T. Das, Electrochemical and
Solid-State Letters, 6(2): 2003.
118. “A Method for Defect Delineation in
Silicon Carbide Using Potassium Hydroxide Vapor,” with R.T. Bondokov,
I.I. Khlebnikov, T. Lashkov, E. Tupitsyn, G. Stratiy, and Y.
Khlebnikov. Japanese Journal of Applied Physics, 41(12):
7312-7316, Dec. 2002.
117. "Comparison of Figures-Of-Merit of N
and P SiC Schottky Diodes at High Temperatures,” with M. Tarplee and
V. Madangarli, Japanese Journal of Applied Physics 41:
7322-7326, Dec. 2002.
116. "Surface Morphology of 6H-SiC after
Thermal Diffusion," with Y. Gao and S. Soloviev, Journal of
Electronic Materials, 31(5): 376, 2002.
115. "Current-Voltage Characteristics of An
Integrated Schottky Diode," with V. Madangarli and M. Tarplee, Solid
State Electronics, 46(5): 753-757, May 2002.
114. "Nondestructive Defect Delineation in
SiC Wafers based on an Optical Stress Technique," with X. Ma and
M. Parker, Applied Physics Letters, 80(18): May 2002.
113. "High Field Insulation relevant to
Vacuum Microelectronic Devices," with X. Ma and P.G. Muzykov, IEEE
Trans. on Dielectrics and Electrical Insulation, 9(2): 216-225,
April 2002.
112. "Influence of crystal thickness on the
SiC PVT growth rate," with D.I. Cherednichenko, Y.I. Khlebnikov,
R.V. Drachev, and I.I. Khlebnikov, Mat. Sci. Forum, 389-393:
95-98, 2002.
111. "Oxidation of porous 4H-SiC
substrates" with S. Soloviev and T. Das, Mat. Sci. Forum,
389-393: 1113-1116, 2002.
110. "Aluminum and boron diffusion into
a-face SiC substrates, " with S. Soloviev, Y. Gao, Y. Khlebnikov,
and I.I. Khlebnikov, Mat. Sci. Forum, 389-393: 557-560, 2002.
109. "Edge Breakdown Issues in Field
Emission Displays," with X. Ma, IEEE Transactions on
Dielectrics and Electrical Insulation, 8(6): 1025-1028, December
2001.
108. "Selective doping of 4H-SiC by
co-diffusion of aluminum and boron," with Y. Gao and S. Soloviev,
Journal of Applied Physics, 90(11): 5647-5651, Dec. 2001.
107. "Design Rules for Field Plate Edge
Termination in SiC Schottky Diodes," with M. Tarplee, Q. Zhang,
and V. Madangarli, IEEE Trans. On Electron Devices, 48(10):
2659-2666, Oct. 2001.
106. "The Influence of High-Temperature
Annealing on SiC Schottky Diode Characteristics," with Q. Zhang, Journal
of Electronic Materials, 30(11): 1466-70, July 2001.
105. "Liquid phase silicon at the front of
crystallization during SiC PVT growth," with R.V. Drachev, G.D.
Stratiy, D.I. Cherednichenko, and I.I. Khlebnikov, Journal of
Crystal Growth, 233: 541-547, July 2001.
104. "Planar 4H- and 6H-SiC p-n Diodes
Fabricated by Selective Diffusion of Boron,” with Y. Gao and S.
Soloviev, Solid State Electronics, 45: 1987-1990, June 2001.
103. “Local Epitaxy and Lateral Epitaxial
Overgrowth of SiC,” Y. Khlebnikov, I. Khlebnikov, and M. Parker, J.
of Crystal Growth, 233: 112-120, June 2001.
102. "Triple-Junction Issues In Field
Emission Displays," with X. Ma, Journal of Vacuum Science and
Technology, B19(3): 683-686, May/June 2001.
101. "Lateral Current Spreading in SiC
Schottky Diodes Using Metal Overlap Edge Termination," with Q.
Zhang, Solid State Electronics 45: 1847-1850, May 2001.
100. "Forward Characteristics of P+PN+ and
P+NN+ diodes of 6H-SiC," with Q. Zhang, Solid State
Electronics 45: 1559-1563, April 2001.
99. "Dislocations as a source of micropipe
development in the growth of silicon carbide,” with D.I.
Cherednichenko, Y. I. Khlebnikov, I. I. Khlebnikov, and R.V. Drachev, Journal
of Applied Physics., 89(7): 4139-41, April 1, 2001.
98. "Boron diffusion into 6-H-SiC through
graphite mask," with S. Soloviev and Y. Gao, Journal of
Electronic Materials, 30(3): 224-227, Mar. 2001.
97. "SiC Planar Mos-Schottky Diodes: A High
Voltage Schottky Diode with Low Leakage Current,” with Q. Zhang and
V. Madangarli, Solid State Electronics 45: 1085-1089, March
2001.
96. "Comparison of Current–Voltage
Characteristics of N and P Type 6H-SiC Schottky Diodes," with Q.
Zhang, V. Madangarli, and M. Tarplee, Journal of Electronic
Materials, 30(2): 196-201, 2001.
95. "Doping of 6H-SiC by Selective
Diffusion of Boron," with S.I. Soloviev and Y. Gao, Applied
Physics Letters, 77(24): 4004-06, Dec. 2000.
94. "Prebreakdown and Breakdown
Investigation of Needle-Plane Vacuum Gaps in the Micron/Submicron
Regime," with P.G. Muzykov and X. Ma, J. of Vacuum Science and
Technology B, 18(3): 1222-26, May/June 2000.
93. "High Field Performance of Thin-Wall
Spacers Bridging Two Thin-film Electrodes," with X. Ma, IEEE
Transaction Dielectrics and Electrical Insulation, 7(2): 277-82,
April 2000.
92. “An Analytical Study of the SiC Growth
Process from Vapor Phase,” with D. Cherednichenko and I. Khlebnikov,
Material Science Forum, 338-342: 35-38, 2000.
91. “Damage-Free Surface Modification of
Hexagonal Silicon Carbide Wafers,” with T.C. Chandler and M.B. Lari,
ibid., pp. 845-48.
90. “Selective Doping of 6H-SiC by Diffusion
of Boron,” with S. Soloviev, Y. Gao, and I. Khlebnikov, ibid.,
pp. 945-48.
89. “Initial Stage of Crystallization in the
Growth of Silicon Carbide on Substrates with Micropipes,” with I.
Khlebnikov, D. Cheredinchenko, and Y. Khlebnikov, ibid., pp. 59-62.
88. "Lateral Current Spreading in SiC
Schottky Diodes Using Field-Plate Edge Termination," with Q.
Zhang, V. Madangarli, and M. Tarplee, ibid., pp. 1223-26.
87. "Computer Simulation of P-Type SiC
Schottky Diode Using ATLAS," with M. Tarplee, V. Madangarli, and
Q. Zhang, ibid., pp. 1231-34.
86. "Characterization of SiC Using Raman
Spectroscopy," with J C. Burton, F.H. Long, Y. Khlebnikov, and M.
Parker, ibid., pp. 615-18.
A.2. Archival Publications – Past
Publications
85. “Structural Defect Visualization and Oxide
Breakdown in SiC Wafers after Thermal Oxidation," with S.
Soloviev, I. Khlebnikov, and V. Madangarli, Material Science and
Engineering B 61-62: 464-467, June 1999.
84. "High Field Characteristics of
Dielectric Spacers in Thin-Film Electrode Vacuum Gaps," with X.
Ma, J. of Vacuum Science and Technology B, 17 (4): 1580-84,
July/August 1999.
83. "High Field Breakdown of Narrow Quasi
Uniform Field Gaps in Vacuum," with P.G. Muzykov, X. Ma, and D.I.
Cherednichenko, J. Applied Physics, 85(12): 8400-04, 15 June,
1999.
82. "High Field Characteristics of
Thin-Film Metal Electrodes," with X. Ma and P.G. Muzykov, J.
Vac. Sci. Technol. B, 17(2): 769-72, Mar./Apr. 1999.
81. “Correlation between Oxide Breakdown and
Defects in SiC Wafers,” with S. Soloviev, I. Khlebnikov, and V.
Madangarli, Journal of Electronic Materials, 27(10): 1124-1127,
October, 1998.
80. “Prebreakdown and Breakdown Investigation
of Broad Area Electrodes in the Micrometric Regime,” with X. Ma, Journal
of Vacuum Science and Technology B, p. 1174-1179, May/June 1998.
79. "Surface Flashover Effects in AlGaN/GaN
HFETs," with G. Gradinaru, M.A. Khan, Q. Chen, and J. Yang, Electronic
Letters, 34(9): 927-928, April 1998.
78. "High Field Breakdown Characteristics
of Micrometric Gaps in Vacuum," with X. Ma, J. Vacuum Sci.
Technol., B16(2): 745-48, Mar/Apr. 1998.
77. "Prebreakdown and Breakdown Effects in
AlGaN//GaN Heterostructure Field Effect Transistors," with G.
Gradinaru, M.A. Khan, N.C. Kao, Q. Chen, and J. Yang, Applied
Physics Letters, 72(12): 1475-1477, March 1998.
76. "Dielectric Surface Flashover in
Vacuum: Experimental Design Issues," with C.R. Li, IEEE Trans.
on Dielectrics and Elec. Insul., invited article, 4(5): 657-62,
Oct. 1997.
75. “Electrode Architecture related to Surface
Flashover of Solid Dielectrics in Vacuum," IEEE Trans. on
Dielectrics and Elec. Insul., invited article, 4(4): 374-81, Aug.
1997.
74. "High Field/High Temperature
Performance of Semi-Insulating Silicon Carbide," with G.
Gradinaru, G. Korony, and W. Mitchel, Diamond and Related Materials
6, ELSEVIER Science S.A., p. 1392-95, 1997.
73. "Metalorganic Chemical Vapor
Deposition-Grown AlN on 6H-SiC for Metal-Insulator-Semiconductor
Device Applications," with C.C. Tin, Y. Song, T. Isaacs-Smith,
and V. Madangarli, J. Electronic Materials, 26(3): 212-16,
1997.
72. "Electrical Properties of High
Resistivity 6H-SiC under High Temperature/High Field Stress,"
with G. Gradinaru, Appl. Phys. Lett., 70 (6): 735-737, Feb.
1997.
71. "High Field Flashover Strength of
Intrinsic Gallium Nitride and Aluminum Nitride in Vacuum," with
M.A. Khan, Q. Chen, and G. Gradinaru, Appl. Phys. Lett., 69(2):
254-256, July 1996.
70. "Surface Filamentation in
Semi-Insulating Silicon," with G. Gradinaru, J. Appl. Phys.,
79(11): 8557-8564, June 1996.
69. “High Field Activation of Micropipes in
High Resistivity Silicon Carbide,” with G. Gradinaru, G. Korony, W.
Mitchel, and R.H. Hopkins, Journal of Electronic Materials,
25(5): 893-898, May 1996.
68. "Influence of Contact Architecture on
the High Field Characteristics of Planar Silicon Structures,"
with V.P. Madangarli, et. al., IEEE Trans. Electron. Devices,
43(5): 793-799, May 1996.
67. "Spark-Gap Atomic Emission
Microscopy," with P.G. van Patten, J.D. Noll, and M.L. Myrick, J.
Phys. Chem., 100: 3646-51, 1996.
66. "Characteristics of Preflashover Light
Emission from Dielectric Surfaces in Vacuum," with C.R. Li, IEEE
Trans. on Electrical Insulation, 2(3): 483-91, June 1995.
65. “High Field Effects in High Resistivity
Silicon Carbide in Lateral Configurations,” with G. Gradinaru, G.
Korony, W. Mitchel, and R.H. Hopkins, Appl. Phys. Lett.,
67(23): 3435-3437, Dec. 1995.
64. "Bulk Breakdown of High Field
Silicon-Dielectric Systems," with G. Gradinaru, IEEE Trans. on
Electron Devices, 42(6): 1156-65, June 1995.
63. "Characteristics of Preflashover LIght
Emission from Dielectric Surfaces in Vacuum," with C.R. Li, IEEE
Trans. on Electrical Insulation, 2(3): 483-91, June 1995.
62. "Preflashover Luminosity along an
Alumina/Vacuum Interface," with T. Asokan, IEEE Trans. on
Electrical Insulation, 1(6): 1180-85, Dec. 1994.
61. "Dielectric Surface Preflashover
Processes in Vacuum," with C.R. Li, J. Applied Phys.,
76(6): 3313-3320, 15 September 1994.
60. "The Influence of Semiconductor and
Dielectric Properties on Surface Flashover in Silicon-Dielectric
Systems," with G. Gradinaru and V. Madangarli, IEEE Trans. on
Electr. Dev., 41(7): 1233-38, July 1994.
59. "Influence of Surface Microstructure on
the Electric and Spectroscopic Characteristics of Dielectric Surface
Flashover," with Li and Sundararaman, IEEE Trans. on
Electrical Insulation, 1(2): 315-22, 1994.
58. "An Analysis of the Scanning Electron
Microscope Mirror Image Based on the Dielectric Surface
Microstructure," with T. Asokan, J. of Appl. Phys., 75(8):
3715-22, April 15, 1994.
57. "Effect of Residual Stress on the
Surface Flashover of Alumina Ceramics," with T. Asokan, IEEE
Trans. on Electr. Insul., 1(1): 97-105, Feb. 1994.
56. "Measurement of Space Charge Field in
Transformer Oil using Kerr Effect," with S. M. Mahajan, Ibid.,
pp. 63-70.
55. "Spectroscopic Observations of Surface
Flashover across an Insulator in Vacuum under Pulsed Excitation,"
with Li and Sundararaman, IEEE Trans. on Plasma Sci., 21(5):
598-04, Oct. 1993.
54. "Optimization of Test Procedure to
Improve Insulator Performance under High Electric Stress," with
T. Asokan, IEEE Trans. on Elec. Insul., 28(4): 545-554, August
1993.
53. "Dependence on the Surface Flashover
Properties of Alumina on the Polishing Abrasive Parameters," with
T. Asokan, IEEE Trans. on Electrical Insulation, 28(4):
535-544, Aug. 1993.
52. "Surface Flashover in Silicon-Vacuum
Systems," with G. Gradinaru and V. Madangarli, IEEE Trans. on
Electrical Insulation, 28(4): 555-565, Aug. 1993.
51. "Insulator Surface Flashover
Conditioning: A Streak Photographic Investigation," with T.
Asokan, IEEE Trans. on Plasma Science, 21(3): 298-304, June
1993.
50. "Prebreakdown and Breakdown Phenomena
in High-Field Semiconductor-Dielectric Systems," with G.
Gradinaru, J. Appl. Phys., 73(11): 7643-66, June 1993.
49. "Spectral Nature of Luminosity
Associated with the Surface Flashover Process," with T. Asokan, IEEE
Trans. on Electrical Insulation, 28(2): 192-99, April 1993.
48. "Streak Photography of the Dynamic
Electrical Discharge Behavior along Insulator Surfaces in
Vacuum," with T. Asokan, IEEE Trans. on Electrical Insulation,
28(1): 101-110, February 1993.
47. "New Results on Surface Flashover in
Silicon-Dielectric Systems," with G. Gradinaru and V. P.
Madangarli, Optically Activated Switching II, January 1993.
46. "Computational Analysis of the Surface
Permittivity and Charging of Dielectrics using the ‘SEM Mirror
Technique’," with J. Wang, IEEE Trans. on Electrical
Insulation, 27(6): 1127-35, Dec. 1992.
45. "Role of Coulombic Centers on the
Insulator Surface Breakdown Characteristics," with Asokan, IEEE
Trans. on Electrical Insulation, 27(5): 1040-49, Oct. 1992.
44. "Time-Resolved Prebreakdown X-ray
Emission from Polycrystalline Alumina Bridged Vacuum Gaps for Impulse
Stresses", with Bommakanti, J. of Applied Physics, 71(5):
2181-88, March 1992.
43. "Effect of Test Environment on the
Surface Breakdown Characteristics of Photoconducting Silicon,"
with Asokan, Optically Activated Switching II, SPIE, 1632:
231-41, Jan. 1992.
42. "On the negative differential
resistance effect in the high field semiconductor-dielectric
systems," with G. Gradinaru and V.P. Madangarli, Applied
Physics Letters, 61(1): 55-57, January 1992.
41. "A Photoelectronic Source for Electron
Avalanche Measurements," with Mahajan, Review of Scientific
Instruments. 62(10): 2495-96, Oct. 1991.
40. "Flashover in Wide Band-Gap High Purity
Insulators: Methodology and Mechanisms," with C. Le Gressus, C.
Blaise, et. al., J. of Applied Physics. 69(9): 1-10, May 1991.
39. "Protection of Fast and Sensitive
Preamplifiers," with Mahajan, Review of Scientific Instruments.
62(4): 1102-03, April 1991.
38. "Measurement of Electrical and Optical
Avalanches Near Solid Insulators in High pressure (up to 0.3 MPa)
Nitrogen Gas," with S. M. Mahajan, J. of Applied Physics,
69(5): 2877, March, 1991.
37. "New Findings of Pulsed Surface
Breakdown Along Silicon in Vacuum," with S.H. Nam, IEEE Trans.
on Electron Devices, 37(12): 2466-71, Dec. 1990.
36. "Influence of Mechanical Grinding and
Polishing Operations of Brittle Polycrystalline Alumina on the Pulsed
Surface Flashover Performance," with Bommakanti, J. of Applied
Physics, 67(11): 6991-97, 1990.
35. "Trap Dominated Breakdown Processes in
an Insulator Bridged Vacuum Gap," with Bommakanti, J. of
Applied Physics, 66(5): 2091-99, Sept. 1989.
34. "Observation of Three Distinct Phases
Leading to Pulsed Surface Flashover Along Silicon without end contacts
in Vacuum," with S.H. Nam, IEEE Trans. on Electrical
Insulation, 24(6): 979-83, 1989.
33. "Avalanches near a solid insulator in
nitrogen gas at atmospheric pressure," with S. M. Mahajan, J.
of Applied Physics, 66(3): 1095-1102, Aug. 1989.
32. "Studies on the self and laser
initiated discharge characteristics at dielectric/gas
interfaces," with K. Foo, IEEE Trans. on Plasma Science,
17(4): 588-94, Aug. 1989.
31. "Analysis and Design of a Traveling
Wave Tube Feedthrough," with R. Bommakanti and R. Peters, IEEE
Trans. on Electrical Insulation, 24(6): 1053-62, 1989.
30. "DC Surface Flashover Mechanism Along
Solids in Vacuum, Based on a Collision Ionization Model," with
Jaitly, J. of Applied Physics, 64(7): 3411-18, Oct. 1988.
29. "X-ray Emission and Prebreakdown
Currents in Plain and Dielectric Bridged Vacuum Gaps Under DC
Excitation," with Jaitly, IEEE Trans. on Electrical Insulation,
EI-23(2): 231-42, April 1988.
28. "In-Situ Insulator Surface Charge
Measurements in Dielectric Bridged Vacuum Gaps Using an Electrostatic
Probe," with Jaitly, IEEE Trans. on Electrical Insulation,
EI-23(2): 261-73, April 1988.
27. "45 Degree Insulator Surface
Flashover," with Arnold, Thompson, and Dougal, IEEE Trans. on
Electrical Insulation. EI-23(1): 17-25, Feb. 1988.
26. "Novel Insulator designs for Superior
DC Hold-off in Bridged Vacuum Gaps," with Jaitly, IEEE Trans.
on Electrical Insulation. EI-22(6): 801-10, Dec. 1987.
25. "Degradation due to Wet Hydrogen Firing
on the High Voltage Performance of Alumina Insulators in Vacuum
Applications," with Jaitly, Dougal and Miller, IEEE Trans. on
Electrical Insulation. EI-22(4): 447-52, Aug. 1987.
24. "Partial Discharge Characteristics in
Barium Titanate Multi-Layered Structures-- Effect of Material and
Structural Parameters," with Chang, Thompson, Dougal, Chan and
Rawal, IEEE Trans. on Electrical Insulation, EI-22(4): 489-95,
Aug. 1987.
23. "Swarm Parameters Along Gas-Solid
Dielectric Interfaces," with Mahajan and Dougal, Electric
Insulation and Dielectric Phenomena, IEEE 86CH23l5-0, pp. 558-63,
Nov. l986.
22. "Electro-Cathodoluminescence in
Insulator Bridged Vacuum Gaps Under High Voltage Stress," with
Jaitly, Journal of Applied Physics, 60(l0): 3711-l9, Nov. l986.
21. Invited paper: “Mechanism of Surface
Flashover Along Solid Dielectrics in Compressed Gases - A Review,”
with Dougal. IEEE Digest of Literature on Dielectrics,
published by the Electrical Insulation Society, EI-2l(5): 727-746,
October l986.
20. "A New Method for Etching
Molybdenum," with M.H. Lim, and S. Goode, Journal Praktische
Metallagraphie, West Germany, 23: 450-457, Sept. 1986.
19. "Analysis of Electric Stress
Distribution in Cavities Embedded Within Dielectric Structures,"
with Chang and Thompson, IEEE Trans. on Electrical Insulation,
EI-21(2): 213-219, April 1986.
18. "Chemical Etching of Molybdenum Using
Nonaqueous Solvents," with Lim and Goode, Metal Finishing
Journal, pp. 59-61, January 1986.
17. "Pre-Breakdown and Breakdown Phenomena
Along PMMA Surfaces in Vacuum and Nitrogen Gas Stressed by 60 Hz
Voltages," with Lewis, Thompson, Lee and Dougal. IEEE Tr. on
Electrical Insulation, EI-19(6): 512-518, December 1984.
16. "Wetting of Metal Surfaces with a
Liquid Metal Using a Plasma Interaction Technique," with M. H.
Lim, et. al. J. of Vacuum Science and Technology, 2(4):
1503-1508, October 1984.
15. "Wetting of Al Electrodes with
Mercury," with M. H. Lim, et. al. Journal of Applied Physics,
USA, 56(8): 2236-2240, Oct. 1984.
14. "Breakdown Time of a Triggered Vacuum
and Low-pressure Switch," with J.M. Wilson, J.E. Thompson and R.L.
Boxman, IEEE Trans. on El. Insul., EI-l8(3): 238-242, June
l983.
13. "Predischarge Current Measurements in
Vacuum Gaps Bridged with Plexiglas Insulators," with R. Lee, J.E.
Thompson and G.R. Nagabhusana. IEEE Trans. on Elect. Insul.,
EI-l8(3): 280-286, June l983.
12. “Vacuum Switch Trigger Delay
Characteristics," with F.T. Warren, J.M. Wilson, and J.E.
Thompson, Special Issue on Plasma Switches, IEEE Transactions on
Plasma Science, PS-l0(4): 298-30l, Dec. l982.
11. "Electrostatic Field Evaluation by the
Electrolytic Tank Methods," with J. E. Thompson, K. Salisbury, L.
Park, G. R. Nagabhusana, Ibid., pp. 374-78.
10. "Predischarge Current Measurements and
Optical Surface Field Measurements Associated with Insulator Surface
Flashover," with R. Lee, H. Rhinehart, J.E. Thompson, Gaseous
Dielectrics III, Pergamon Press, l982, pp. 349-55.
9. "The Aging of Electrical Insulation at
Cryogenic Temperatures," with R.J. Densley and A.T. Bulinski, IEEE
Trans. on Electrical Insulation, EI-l5(2): 83-88, April l980.
8. "The Effects of Water Immersion on the
Electrical Properties of Miniature XLPE Cables," with R.J.
Densley and A.T. Bulinski, Canadian Elec. Engr. J., 5(2): 14,
l980.
7. "Short-Term Electrical Insulating
Characteristics of Polymeric Materials Immersed in Liquid
Nitrogen," with A.T. Bulinski and R.J. Densley, IEEE Trans. on
Electrical Insulation, EI-l4(4): 211-22l, Aug. 1979.
6. "Micro-Particles Production in a Uniform
Field Vacuum Gap with Solid Dielectric Spacer," with J.D. Cross, IEEE
Trans. on Electrical Insulation, EI-l2(5): 376-77, October l977.
5. "Prebreakdown Processes Associated with
Surface Flashover of Solid Insulations in Vacuum," with J.D.
Cross and K.D. Srivastava, IEEE Trans. on Electrical Insulation,
EI-l2(3): 200-208, June l977.
4. "The Effect of Chromium Oxide Coatings
on Surface Flashover of Alumina Spacers in Vacuum," with J.D.
Cross, IEEE Trans. on Electrical Insulation, EI-11(1): 32-35,
l976.
3. "High Speed Photography of Surface
Flashover Under Direct Voltages in Vacuum," with J.D. Cross, IEEE
Trans. on Electrical Insulation, EI-ll(1): 63-66, l976.
2. "The Effect of Cuprous Oxide Coatings on
the Surface Flashover of Dielectric Spacers in Vacuum," with J.D.
Cross, IEEE Trans. on Electrical Insulation, EI-9(4): l46-l50,
Dec. l974.
1. "DC Electric Field Modifications
Produced by Solid Insulators Bridging a Uniform Field Vacuum
Gap," with J.D. Cross, IEEE Trans. on Electrical Insulation,
EI-8: l22-l28, Dec. l973.
B.1. International Conference Proceedings:
Since 2000
124. “Fundamentals of SiC Bulk Growth Process
and Defect Generation Mechanisms,” with R. Bondokov and A.
Arulchakkaravarthi, International Workshop on Crystal Growth and
Characterization of Technologically Important Materials, Chennai,
India, February 2004.
123. “Modification of 6H-SiC Surface Defect
Structure during Hydrogen Etching,” with R. Bondokov, N. Tipirneni,
and D. Cherednichenko, International Conference on Silicon Carbide
and Related Materials 2003 (ICSCRM2003) Lyon, France, October
2003.
122. “Formation of Stacking Faults in Diffused
SiC p+/n-/n+ and p+/p-/n+ Diodes,” with S. Soloviev and D.
Cherednichenko, ICSCRM2003 Lyon, France, October 2003.
121. “Nondestructive defect characterization
of SiC epilayers and its significance for SiC device research,” with
X. Ma, ICSCRM2003 Lyon, France, October 2003.
120. "Nondestructive Defect Delineation and
Mapping in SiC Substrate and Epitaxial Film,” with X. Ma, Y. Gao, R.
Bondokov, S. Maximenko, and T. Lashkov, American Physical Society
Austin TX, March 2003.
119. “Thermal stress as the major factor of
defect generation in SiC during PVT growth,” with D.I.
Cherednichenko, R.V. Drachev, I.I. Khlebnikov, and X. Deng, Mater.
Res. Soc. Symp. 724: 131-136, 2003.
118. “Influence of a diffraction vectors
noncomplanarity on the double crystal rocking curves parameters,”
with P. Muzykov, A. Razumovsky, and M. Tchernov. International
Conference on Modern methods of diffraction data analysis (x-ray
topography, diffraction, and electron microscopy) New Novgorod,
Russia, p. 84-86, 18-20 November 2002.
117. “Comparative characterization of
differently oriented SiC wafers,” with P.G. Muzykov, Y.I. Khlebnikov,
I.I. Khlebnikov, R.T. Bondokov, A.E. Grekov, S.I. Maximenko, and S.I.
Soloviev, 44th Electronic Materials Conference (TMS), Santa
Barbara, CA June 26, 2002.
116. “Modeling of in-situ off-axis seeding
surface preparation conditions for SiC PVT growth," with R.V.
Drachev, D.I. Cherednichenko, and I.I. Khlebnikov, TMS, 2002.
115. "Effect of substrate resistivity on
formation of porous SiC," with T. Das, S. Soloviev, J. Bai, and
P.I. Gouma, TMS, 2002.
114. "High Voltage Engineering Issues in
Field Emission Displays, " with X. Ma and P.G. Muzykov, 12th
International Symposium on High Voltage Engineering, pp. 485-88,
August 2001.
113. "Surface Evaluation of 6H-SiC after
Doping by Diffusion, " with Y. Gao, S. Soloviev, X. Wang, and
C.C. Tin, Mater. Res. Soc. Symp. 680E: April, 2001.
112. "Comparison of Current – Voltage
Characteristics of N and P Type SiC Schottky Diodes," with Q.
Zhang, V. Madangarli, and Y. Gao, Mater. Res. Soc. Symp. 640:
H5.21, 2001.
111. "Point and planar defect formation in
SiC during PVT growth," with Y. Khlebnikov, R.V. Drachev, C.A.
Rhodes, D.I. Cherednichenko, and I. Khelbnikov, Mater. Res. Soc.
Symp. 640: H5.1, 2001.
110. "Dislocation Content of Etch Pits in
Hexagonal Silicon Carbide," with I. Khlebnikov, M.B. Lari, Y.
Khlebnikov, and R.T. Bondokov, Mater. Res. Soc. Symp. 640:
H5.4, 2001.
109. "One of Many Sources of Defect
Generation in SiC," with Y. Khlebnikov, I. Khlebnikov, and C.
Wood, Mater. Res. Soc. Symp. 640: H5.3, 2001.
108. "Al/Ni and Al/Ti Ohmic Contacts to
p-type SiC Diffused Layer," with S. Soloviev, Y. Gao, J.R.
Williams, and J. Crofton, Mater. Res. Soc. Symp. 640: H5.19,
2001.
107. "Selective Doping of 4H-SiC by
Aluminum/Boron Co-Diffusion," with Y. Gao, S.I. Soloviev, X.
Wang, and C.C. Tin, Mater. Res. Soc. Symp. 640: H6.9, 2001.
106. "High Field Insulation relevant to
Vacuum Microelectronic Devices," with X. Ma and P.G. Muzykov,
invited talk International Symposium on Discharges and Electrical
Insulation in Vacuum, Xi'an, P.R. China, Oct. 2000.
B.2. International Conference Proceedings –
Past Conferences
105. “Thick Oxide Layers on N and P SiC Wafers
By A Depo-Conversion Technique”, with Q. Zhang, I. Khlebnikov, V.
Madangarli, and S. Soloviev, 1999 Spring MRS meeting, San
Francisco, CA, April 1999.
104. “High Voltage Schottky Barrier Diodes on
P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge
Termination”, with Q. Zhang, S. Soloviev, V. Madangarli, and I.
Khlebnikov, 1999 Spring MRS meeting, San Francisco, CA, April
1999.
103. "Flashover Performance of Thin-Wall
Spacers in Field Emission Displays," with X. Ma, IS&T/SPIE's
Electronic Imaging 1999, San Jose, CA 25-29 January 1999.
102. “Structural Defect Visualization and
Oxide Breakdown in SiC Wafers after Thermal Oxidation”, with S.
Soloviev, I. Khlebnikov, and V. Madangarli, 2nd European Conference
on Silicon Carbide and Related Materials (ECSCRM’98),
Montpelier, France, September, 1998.
101. "Investigations to simulate the High
Field Characteristics of Gate to Cathode gaps in FEDs," with P.G.
Muzykov, X. Ma, and D.I. Cherednichenko, International Vacuum
Microelectronics Conference, Asheville, North Carolina, p. 73-74,
June, 1998.
100. "High Field Characteristics of Thin
Film Metal Electrodes Relevant to Field Emission Displays," with
X. Ma and P.G. Muzykov, International Vacuum Microelectronics
Conference, Asheville, North Carolina, p. 59-60, June 1998.
99. "High Field Characteristics of
Insulators in the Micrometric Regime Relevant to Field Emission
Displays," with X. Ma, International Vacuum Microelectronics
Conference, Asheville, North Carolina, p. 57-58, June 1998.
98. "Bulk Breakdown in AlGaN/GaN HFETs,"
with G. Gradinaru and M.A. Khan, 1998 Spring Mat. Res. Soc. Symp.
Proc., 512: 309-14, 1998.
97. "A Technique for Rapid Thick Film SiC
Epitaxial Growth," with I. Khlebnikov, V. Madangarli, and M.
Capano, 1997 Fall MRS Symposium, Boston, Dec. 1-5, 1997.
96. "SiC Epitaxial Growth on Carbon,"
with I. Khlebnikov and V. Madangarli, ibid.
95. "Correlation between Oxide Breakdown
and Defects in SiC Wafers," with S. Soloviev, I. Khlebnikov, and
V. Madangarli, ibid., pp. 351-55.
94. "Power Limitation due to Premature
Breakdown in AlGaN/GaN HFETs," with G. Gradinaru and M.A. Khan, ibid.
93. "Comparison of High Field
Characteristics of SiO2 vs. AlN Gate Insulators in 6H SiC MOS
Capacitors," with V.P. Madangarli and C.C. Tin, ibid.,
pp.345- 350.
92. "The Response of High Voltage 4H-SiC
P-N Junction Diodes to Different Edge Termination Techniques"
with T.N. Oder, C.C. Tin, J.R. Williams, T. Issacs-Smith, and V.
Madangarli, ibid., pp.101- 106.
91. "Observation of Bulk Defects in SiC
Crystals," with Y.I. Khlebnikov. International Semiconductor
Device Research Symposium, Charlottesville, VA, Dec. 10-13, 1997.
90. "High Pinch-off Voltage AlGaN-GaN
Heterostructure Field Effect Transistor," with M.S. Shur, Q.
Chen, J. Yang, R. Gaska, M.A. Khan, A. Ping, I. Adesida, and V.P.
Madangarli, ibid., Dec. 1997.
89. "Prebreakdown and Breakdown
Characteristics of Micrometric Vacuum Gaps between Broad Area
Electrodes," with M. McLester and X. Ma, IEEE Conf. on Elec.
Insul. and Dielectric Phenomena, paper 7B-6, Minneapolis, MN, Oct.
1997.
88. "High Field Breakdown Characteristics
of Micrometric Gaps in Vacuum," with X. Ma and J.D. Kim, 10th
Int. Vacuum Microelectronics Conference, Kyongju, Korea, Aug.
1997.
87. “A Non-Destructive Technique For High
Field Characterization Of Gate Insulators In SiC MOS Capacitors,”
with V.P. Madangarli, Int. Conf. on SiC and III-N '97,
Stockholm, Sweden, August 31st - September 5, 1997.
86. “Rapid Anodic Oxidation Of 6H-SiC,” with
Y. Khlebnikov, V.P. Madangarli, and M.A. Khan, Int. Conf. on SiC
and III-N '97, Stockholm, Sweden, August 31st - September 5, 1997.
85. “Thick Film SiC Epitaxy For ‘Filling
Up’ Micropipes,” with I. Khlebnikov and V.P. Madangarli, Int.
Conf. on SiC and III-N '97, Stockholm, Sweden, August 31st -
September 5, 1997.
84. "Minority Carrier Lifetime Measurements
in 6H-SiC using the Photoconductive Decay Technique," with W.
Zhou, I. Khlebnikov, M.A. Capano, and W.C. Mitchel, Int. Conf. on
SiC and III-N '97, Stockholm, Sweden, August 31st - September 5,
1997.
83. “Defect Formation during SiC Crystal
Growth,” with I. Khlebnikov, Y. Khlebnikov, E. Solodovnik, and V.
Madangarli, The 39th Electronic Materials Conference, Fort
Collins, Colorado, 1997.
82. "Surface Flashover and Preflashover
Phenomena of Solid Dielectrics in Vacuum," T.S. Sudarshan,
invited talk, XVII Int'l Symp. on Discharges and Electrical
Insulation in Vacuum, Berkeley, CA, Volume I: 381-90, July 1996.
81. "Electric Field Breakdown Mechanisms in
High Power Epitaxial 4H-SiC p-n Junction Diodes," with C.C. Tin,
V. Madangarli, E. Luckowski, J. Casady, T. Isaacs-Smith, J.R.
Williams, R.W. Johnson, and G. Gradinaru. Proceedings of the 1996
IEEE International Conference on Semiconductor Electronics,
Malaysia, 1996.
80. "High Electric Field Breakdown of
4H-SiC PN Junction Diodes", with C.C. Tin, V. Madangarli, R. Hu,
E. Luckowski, J. Casady, T. Isaacs-Smith, G. Gradinaru, and R.W.
Johnson, Materials Research Society Symposium Proceedings, San
Francisco, CA, 423: 111-115, April 1996.
79. "Characterization of 4H-SiC MOS
Capacitors By a Fast-Ramp Response Technique," with V.P.
Madangarli, G. Gradinaru, C.C. Tin, R. Hu, and T. Isaacs-Smith, Materials
Research Society Symposium, San Francisco, CA, 423: 99-104, April
1996.
78. "High Field/High Temperature
Performance of Semi-Insulating Silicon Carbide," with G.
Gradinaru, et al., The 1st European Conference of Silicon Carbide
and Related Materials (ECSRM), Heraclion, Crete, Greece, Oct. 6-7,
1996.
77. "Electro-Optical Investigation of
Micropipes in Silicon Carbide," with M. Helmi and G. Gradinaru, MRS
1996 Fall Meeting, Symposium E - Defects in Electronic Materials,
Boston, MA, Dec. 2-6, 1996.
76. "Temperature Effects in High
Resistivity Silicon Carbide under Pulsed Electric Fields," with
G. Gradinaru, et al., 3rd International High Temperature
Electronics Conference (HiTEC'96), Albuquerque, NM, 1: 1125-1130,
June 9-14, 1996.
75. “4H SiC CVD Epitaxial Growth, In Situ
Doping and P-N Junction Fabrication”, with R. Hu, C.C. Tin, E.
Luckowski, T. Isaacs-Smith, J. Casady, V. Madangarli, and G. Gradinaru,
American Physical Society (APS), St. Louis, Missouri, March
1996.
74. "Electro-Thermal Stress and High
Electric Field Effects in CVD-Grown 4H-SiC P-N Junction Diodes,"
with C.C. Tin, et al., 1st Conference on Commercial Development of
Space, Albuquerque, NM, Jan. 7-11, 1996.
73. “AlN for 6H-SiC Power Devices”, with
C.C. Tin, Y. Song, T. Issacs-Smith, and V. Madangarli, AIP
Conference Proceedings 387: 825, 1995.
72. “A Compact Blumlein PFN with Optimized
Performance Index,” with V. Madangarli, L. Liu, and C.R. Li, IEEE
Pulse Power Conference, Albuquerque, NM, June 1995.
71. “High Field Activation of Micropipes in
High Resistivity Silicon Carbide,” with G. Gradinaru, G. Korony, W.
Mitchel, and R.H. Hopkins, presented at 37th Electronic Material
Conference (EMC) Charlottesville, VA, June 21-23, 1995.
70. "Breakdown Damages of Photoconductive
Silicon at High Fields," with G. Gradinaru and G. Korony, SPIE
'94 - Optically Activated Switching IV, Boston, MA, Nov. 1994.
69. "Insulating Properties of
Semi-Insulating Silicon under High Field Excitation," with
Gradinaru and Korony, 4th Int. Conf. on Properties and Applications
of Dielectric Materials, Brisbane, Australia, July 1994.
68. "High Field Microplasma Activity along
Alumina Surfaces in Vacuum," with Li, Ibid.
67. "Influence of Electrode Geometry on
High Field Characteristics of Silicon Wafers used in PCPS
Applications," with Madangarli, Gradinaru, and Korony, 21st
IEEE Intl. Power Modulator Symposium, p. 128-31, June 1994.
66. "High Field Limitations of
Photoconductive Silicon," with Gradinaru and Korony, Ibid.,
pp. 104-07.
65. "Investigations of High Field Effects
in Silicon Carbide," with Gradinaru, Korony, Mitchel, and
Nunnally. Proc. of Second Intl. High Temperature Electronics
Conference, 2: 147-52, Charlotte, NC, June 1994.
64. "Inhomogeneous Charging Characteristics
of Polycrystalline Alumina Surfaces," with T. Asokan, Proc.
16th Int. Symp. on Discharges and Electrical Insulation in Vacuum,
St. Petersburg, Russia, May 1994.
63. "Influence of Dielectric Surface
Properties on the Generation of Surface Microplasmas," with Li, Ibid.
62. "Surface Flashover Sensitivity of
Silicon in Vacuum," with Gradinaru and Korony, Ibid.
61. "Spectroscopic Observations of Light
Emission from Surface Flashover of Insulators under HV Stress,"
with Sundararaman, Li, and Goode, Annual Report, CEIDP (Poconos),
p. 293-98, Oct. 1993.
60. "Surface Flashover Performance of
Chemically Etched Polycrystalline Alumina," with Mitra, ibid.,
p. 318-23.
59. "Lattice Strain and its Relationship
with the Surface Flashover Properties of Polycrystalline
Alumina," with T. Asokan, 8th Int. Symp. on High Volt. Engr,
Yokohama, Japan, 1: 315-18, Aug., 1993.
58. "A Review on the Breakdown Limitation
of Photoconductive Semiconductor Power Switches," with G.
Gradinaru, 9th IEEE Pulsed Power Conference, Albuquerque, NM,
pp. 645-49, June 1993.
57. "Comparison of 'Dark' Current
Characteristics of Cylindrical vs. Wafer Configurations of
Photoconductive Silicon," with V.P. Madangarli, G. Gradinaru,
C.R. Li, and M.R. Vaidya, ibid. p. 676.
56. "The high field
semiconductor-dielectric system, a special case of the classical
two-insulator system," with G. Gradinaru,Annual Report, CEIDP,
Victoria, Canada, p. 435-440, Oct. 1992.
55. "Prebreakdown and Breakdown Luminosity
of Large Band Gap Insulators under Pulsed Electrical Excitation,"
with T. Asokan, Ibid., p. 441-47.
54. "Some particularities of the surface
flashover in silicon-vacuum systems," with G. Gradinaru, and V.P.
Madangarli, Proc. 15th Int. Symp. on Discharges and Electrical
Insulation in Vacuum Darmstadt, Germany, p. 208-212, 1992.
53. "Importance of Surface Treatment on the
Surface Flashover Properties of Alumina Ceramics," with T. Asokan,
Ibid., p. 181-85.
52. "Test Procedure for Surface Flashover
Investigations of Dielectric Materials," with T. Asokan, Ibid.,
p. 186-90.
51. "Surface Permittivity Distinct from
Bulk - Ramifications to Surface Breakdown: A Novel Concept," with
J. Wang, Ibid.,pp. 232-36.
50. "Streak Photography of insulator -
surface flashover under pulsed excitation," with T. Asokan and G.
Morris, Conf. record of 20th Intl. Power Modulator Symposium,
p. 336-39, June 1992.
49. "Improved Voltage Holdoff capability of
Photo-conductive Silicon in SF6 environment," with V.P.
Madangarli, G. Gradinaru and F.J. Zutavern, p. 297-300, Ibid.
48. "A Physical model of the electrical
breakdown in high field semiconductor-dielectric systems," with
G. Gradinaru, p. 331-35, Ibid.
47. "Photonic Emissions Associated with a
Dielectric Surface under High Electric Stresses," Invited Paper, Interdisciplinary
Conference on Dielectrics: Properties, Characterization, Applications,
Organized by Societe Francaise Duvide, Antibes, France, p. 224-33,
March 1992.
46. "Validation of a Novel Electrode System
to Study the Surface Flashover Phenomena of Insulators," with
Asokan, Conf. on Electrical Insulation and Dielectric Phen., p.
76-82, Oct. 1991.
45. "Pulsed Voltage Pre-breakdown
Observations on Silicon in Vacuum," with Gamble and Faust, Conf.
on Electrical Insulation and Dielectric Phen. p. 533-38, Oct.
1990.
44. "An SEM Technique for Investigating the
Insulating Properties of Dielectric Surfaces," with Bommakanti
and Le Gressus, IEEE Conf. on Electr. Insuln. and Dielectric Phen.,
p. 219-24, Oct. 1990.
43. "Pulsed Surface Flashover Performance
of Monocrystalline SiO2 Bridged Vacuum Gaps," with Bommakanti and
Le Gressus, IEEE XIV Int. Symp. on Discharges and Electrical
Insulation in Vacuum, Santa Fe, NM, p. 377-80, Sept. 1990.
42. "Flashover: Method of Investigations
and Mechanisms," with C. Le Gressus and C. Blaise, Ibid.,
Santa Fe, NM, p. 299-306, Sept. 1990.
41. "Effect of Leakage Current and Light
Emission on Surface Flashover along Silicon in Vacuum," with S.H.
Nam, 6th Intl. Symp. on High Voltage Engineering, New Orleans,
Aug. 198,.
40. "Simulation of Avalanches in a
Composite Dielectric Medium," with Lam and Mahajan, Ibid
39. "Influence of Insulator Surface Finish
on the Pulsed Surface Flashover performance," with Bommakanti, 7th
Pulsed Power Conference, Monterey, CA, p. 828-31, June 1989.
38. "Pre-breakdown (leakage) and Breakdown
Currents and Light Emission Related to Surface Flashover Along Silicon
in Vacuum," with Nam, p. 362-64, Ibid.
37. "Correlation Between Insulator Surface
and dc Flashover Characteristics in Vacuum," IEEE Conf. on
Electrical Insulation and Dielectric Phenomena, Ottawa, p. 53-59,
Oct. 1988.
36. "Observation of Three Distinct Phases
Leading to Pulsed Surface Flashover Along Silicon in Vacuum,"
with S.H. Nam, 13th Int. Symp. on Discharges and Electrical
Insulation in Vacuum, Paris, 1988.
35. "Analysis and Design of a Traveling
Wave Feedthrough-Electric Field and Insulator Material
Considerations," with Bommakanti, 6th Pulse Power Conference,
Arlington, VA, p. 200-204, June l987.
34. "A Collision-Ionization Model for DC
Surface Flashover Across Insulator-Vacuum Interfaces," with
Jaitly, Ibid., p. 64-68.
33. "Avalanches near a Dielectric Spacer in
High Pressure Nitrogen Gas," with Mahajan, Ibid., p.
191-194.
32. "Avalanches near a Dielectric Spacer in
Nitrogen Gas," with Mahajan and Dougal, 5th Int. Symp. on
Gaseous Dielectrics, Knoxville, May l987.
31. "Invited paper: 45 Degree Insulator
Surface Flashover; A Review and New Results," with Thompson,
Arnold, and Dougal. 12th Int. Symp. on Discharges and Electrical
Insulation in Vacuum. Israel, p. 23l-240, September 1986.
30. "Flashover at Dielectric Interfaces:
The interaction of Surface and Volume Processes," with Kraft and
Dougal, IEEE Intl. Symposium on Electrical Insulation,
Washington D.C., p. 230-234, June 1986.
29. "A Model for Highly Overstressed Vacuum
Breakdown," with Warren, Dougal and Thompson, 5th IEEE Pulsed
Power Conference, Washington, June 1985.
28. "Partial Discharge Characteristics in
Layered Barium Titanate Structures," with D. Chang, R. Dougal, N.
Chan, B. Rawal and J.E. Thompson, IEEE Conf. on Electrical
Insulation and Dielectric Phenomena, p. 38-45, October 1984.
27. "Measurements of Pulsed Insulator
Surface Flashover in Vacuum," with P.A. Arnold, R.A. Dougal and
J.E. Thompson, 11th Int. Symp. on Discharges and Electrical
Insulation in Vacuum, East Germany, 1984.
26. "Role of Surface Charging in the
Breakdown of 45 Degree Insulators Subjected to High Voltage Nanosecond
Excitation," with P. Arnold, C. Courtney, et al., IEEE Int.
Symp. on Electrical Insulation, Montreal, Canada, p. 222-225, June
1984.
25. "Breakdown Measurements for
Overstressed Vacuum Gaps," with F.T. Warren, J.E. Thompson and
R.A. Dougal, 16th Power Modulator Symposium, p. 79-70 June
1984.
24. "Voltage Recovery Time of a Vacuum
Switch," with C.L. McDonald, R.A. Dougal and J.E. Thompson, Ibid.,
p. 91-94.
23. "Liquid Metal Wetting of Metals using a
Plasma Discharge Technique," with Lim, Dougal and Hefley, IEEE
Int. Conf. on Plasma Science, p. 19, May 1984.
22. "The Simultaneous Measurement of Light
and Current Pulses in Liquid Dielectrics," with M. Hanna, J.E.
Thompson, and E. Forster, Conference on Electrical Insulation and
Dielectric Phenomena, Pocconos, Pennsylvania, pp. 245-250, October
l983.
21. "Pre-breakdown and Breakdown Phenomena
of Dielectric Surfaces in Vacuum and N2 Gas Stressed by 60 Hz
Voltages," with J. Lewis, J.E. Thompson, D. Lee and R.A. Dougal, Conf.
on Interfacial Phenomena in Practical Insulating Systems, NBS,
Washington, DC, pp. 12-18, Sept. l9-20, l983.
20. "Breakdown and Recovery Measurements
for Low Pressure Pulsed Gaps," with T. Warren, J. Thompson, C.
McDonald and R. Dougal. 4th Int. Pulsed Power Conference,
Albuquerque, NM, p. 216-222, June l983.
19. "Metal Ion Source for Metallic Surface
Metallurgy," with Xu Zhong, et al., 10th International
Symposium on Discharges and Electrical Insulation in Vacuum,
Columbia, SC, p. 368-373, Oct. l982.
18. "Current Evolution in a Pulsed
Overstressed Radial Vacuum Gap," with F.T. Warren, J.E. Thompson
and R.L. Boxman, 10th International Symposium on Discharges and
Electrical Insulation in Vacuum, Columbia, SC, p. 43-53, Oct.
l982.
17. "Breakdown Time of a Triggered Vacuum
and Low Pressure Switch," with JE. Thompson, J.M. Wilson and R.L.
Boxman. 10th International Symposium on Discharges and Electrical
Insulation in Vacuum, Columbia, SC, p. 268-27l, October l982.
16. "Prebreakdown Conduction Measurements
in Vacuum Gaps Bridged with Alumina Insulators," with R. Lee, G.R.
Nagabhusana, and J.E. Thompson, IEEE Electrical Insulation
Conference, Philadelphia, p. l03-l07, l982.
15. "Surface Flashover Measurements in
Vacuum and N2 Gas," with H. Rhinehart, J.E. Thompson, G.R.
Nagabhusana, and R. Lee, Conference on Electrical Insulation and
Dielectric Phenomena, Whitehaven, PA., p. 424-29, October l98l.
14. "Triggered Vacuum Switch Breakdown and
Conduction Characteristics," with F.T. Warren, J.M. Wilson and
J.E. Thompson, 3rd Int. Pulsed Power Conference, Albuquerque,
New Mexico, p. 36-39, June l98l.
13. "Measurement of Surface Electric Fields
and Charge for Pulsed 45 Insulators," with P. Arnold, D. Chang,
and J.E. Thompson, 3rd Int. Pulsed Conference, Albuquerque, New
Mexico, p. 24-27, June l98l.
12. "The Role of Microparticles in Pulsed
Vacuum Gap Breakdown," with M. Butner, J.E. Thompson and G.
Wierzba, 9th Int. Symp. on Discharges and Electrical Insulation in
Vacuum, Eindhoven, The Netherlands, Sept. l980.
11. "Insulator Surface Flashover,"
with J.E. Thompson, J. Lin, M. Kristiansen, K. Mikkelson, H. Rhinehart,
9th Int. Symp. on Discharges and Electrical Insulation in Vacuum,
Eindhoven, The Netherlands, Sept. l980.
10. "Design of a Triggered Vacuum
Gap," with J.E. Thompson, F.T. Warren, Jr. and R.G. Fellers, 14th
Pulse Power Modulator Symposium, Orlando, Florida, p. 85-9l, June
l980.
9. "Electro-Optical Measurements of
Insulator Preflashover Fields in Vacuum and Gas," with J.E.
Thompson and H. Rhinehart, l980 Region 3 Conference and Exhibit,
Nashville, Tenn., p. 296-99, April l980.
8. "The Effects of Water Immersion, Voltage
and Frequency on the Electric Strength of Miniature XLPE Cables,"
with J. Densley and A. Bulinski, Conf. on Electrical Insulation and
Dielectric Phenomena, p. 469-479, l979.
7. "Electro-Optical Measurement of
Insulator Surface Preflashover Fields in Vacuum," with J.E.
Thompson and D. Hyslop, Ibid. pp. 334-44.
6. "The Prediction of Insulation Life at
Cryogenic Temperatures," with A.T. Bulinski and R.J. Densley, Conference
on Electrical Insulation and Dielectric Phenomena, p. 575-584,
l979.
5. "The Partial Discharge and Breakdown
Characteristics of Insulating Tapes Immersed in Liquid Nitrogen,"
with A.T. Bulinski and R.J. Densley, l978, Conference on Electrical
Insulation and Dielectric Phenomena, National Academy of
Sciences-National Research Council, USA, p. 390-95, l978.
4. "Partial Discharges in Polymeric
Insulation Systems at Cryogenic Temperatures," with A.T. Bulinski,
R.J. Densley, l978, IEEE International Symposium on Electrical
Insulation, Philadelphia, USA, p. 36, June l978.
3. "Some Results of Partial-Discharge
Measurements During the Growth of Electrical Trees," with R.J.
Densley, l977, Conference on Electrical Insulation and Dielectric
Phenomena, National Academy of Sciences-National Research Council,
USA, p. 330-338, l977.
2. "Partial Discharge Characteristics of
Solid Insulation Containing Spherical Cavities of Small
Diameters," with R.J. Densley, l976, Conference on Electrical
Insulation and Dielectric Phenomena, National Academy of
Sciences-National Research Council, p. 28l-288, l976.
1. "The Effect of Secondary Electron
Emission on the Flashover of Solid Insulators in Vacuum," with
J.D. Cross, IEEE Canadian Communications and Power Conference,
Montreal, p. 245, Nov. l974.
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