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    The University of South Carolina
    Department of Electrical Engineering
    301 Main St., Rm. 3A80
    Columbia, SC 29208

    Ph 803.777.4195
    Fax 803.777.8045

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    Columbia, SC

Dr. Krishna C. Mandal

Associate Professor

Dr. Mandal’s Specializations and Research Interests Include:

  • Photovoltaic Solar Cells
  • Thin Film Device Fabrication and Characterization
  • Crystal Growth of Binary and Ternary Semiconductors and Scintillators
  • Solid-state Nuclear Detectors for Radiation Monitoring, Bio-medical Imaging, High Energy Astrophysics, and Bio-crystallography
  • THz Sensors and Detectors
  • Diode-pumped Solid-State Mid- and LW-IR Lasers
Appointments
  • 2009-Present: Associate Professor, Electrical Engineering, University of South Carolina, Columbia
  • 2006-2009: Director, Solid-State Sensor and Detector Division, EIC Laboratories, Inc., Norwood, MA 02062, USA
  • 1998-2006: Senior Scientist, EIC Laboratories, Inc., Norwood, MA 02062, USA
  • 1997-1998: Staff Scientist, Radiation Monitoring Devices, Inc., Watertown, MA 02172, USA
  • 1994-1997: Scientist, Electronic Materials Division, AnRad Corp., Montreal, Canada
Education History and Training
  • 1990-1994: Post Doctoral Fellow & Research Associate, Materials Engineering Department, Ecole Polytechnique, Montreal, Canada
  • 1989-1990: CNRS Fellow, Condensed Matter Physics, Ecole Polytechnique, Paris, France
  • 1987-1989: Chem. Phys. Group, Tata Institute of Fundamental Research (TIFR), Mumbai, India
  • 1988: Ph. D., Materials Science, Indian Institute of Technology (IIT), India
Teaching Experience
  • ELCT 101 - Electrical and Electronics Engineering
  • ELCT 363 - Introduction to Microelectronics
  • ELCT 510 - Renewable Energy Technologies: Photovoltaic Devices and Systems (Initiated and developed this new course for EE)
  • ELCT 566 - Semiconductor Optoelectronics
  • ELCT 874 - Advanced Semiconductor Materials
Honors/Awards
  • ASPIRE-I (Advanced Support for Innovative Research Excellence-I) Award, University of South Carolina, 2012
  • DARPA (Defense Advanced Research Projects Agency) Young Faculty Award (YFA) Award, 2010
  • Recipient of 31 current/past research grant awards as Principal Investigator (PI), totaling approximately $14.5 million in funding, from DOE, DOE-NEUP, DOD (Air Force, DARPA, Navy, MDA, ARO), NASA, NIH, NIST, NSERC-Canada, 3M, DuPont
  • University of South Carolina Magellan Scholar Award that promote undergraduate students mentoring through research (2010, 2011, 2012)
  • CNRS (Centre National de la Recherche Scientifique, France) Fellow (1989 – 1990)
  • CSIR (Council of Scientific & Industrial Research) Graduate Fellowship (1981-1988)
  • National Scholar, India (1974-1981)
  • Plenary Symposium Speaker, 9th International Symposium on New Materials and Nano-Materials for Electrochemical Systems and XII International Congress of the Mexican Hydrogen Society, Merida, Mexico, July 8-13, 2012
  • Plenary Symposium Speaker, 8th International Symposium on New Materials and Nano-Materials for Electrochemical Systems, July 11-15, 2010, Shanghai, China
  • Invited speaker in several (18) international conferences including SPIE, IEEE, MRS, ECS and ACS
  • Editorial Advisory Board Member of the Journal of New Materials for Electrochemical Systems (JNMES)
  • Guest Editor - Special Issue on “Thin Film Solar Cells: Materials and Systems”
  • Associate Editor of the J. of Crystallization Process and Technology (JCPT)
  • Associate Editor of DATASET International “Condensed Matter Physics” Journal
Selected Publications
  • Krishna C. Mandal, Peter G. Muzykov, Sandeep K. Chaudhuri, and J. Russell Terry, "Low energy x-ray and γ-ray detectors fabricated on n-type 4H-SiC epitaxial layer," IEEE Transactions on Nuclear Science, In Press, 2013.
  • Sandeep K. Chaudhury, Ramesh M. Krishna, Kelvin J. Zavalla, Liviu Matei, Vladimir Buliga, Michael Groza, Arnold Burger, and Krishna C. Mandal, "Comparative study of Cd0.9Zn0.1Te gamma detectors in various single-polarity charge sensing device geometries," IEEE Transactions on Nuclear Science, In Press, 2013.
  • Sandeep K. Chaudhuri, Kelvin J. Zavalla, Ramesh M. Krishna, and Krishna C. Mandal, “Biparametric analyses of charge trapping in Cd0.9Zn0.1Te based virtual Frisch grid detectors,” J. Appl. Phys., 113, 0745041-1-6, 2013.
  • Sandeep K. Chaudhuri, Kelvin J. Zavalla, and Krishna C. Mandal, “Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach,” Appl. Phys. Lett., 102, 031109-1-4, 2013.
  • Ramesh M. Krishna, Sandeep K. Chaudhuri, Kelvin J. Zavalla, and Krishna C. Mandal, "Characterization of Cd0.9Zn0.1Te based virtual Frisch grid detectors for high energy gamma ray detection," Nuclear Instruments and Methods in Physics Research A, 701, 208-213, 2013.
  • Sandeep K. Chaudhuri, Ramesh M. Krishna, Kelvin J. Zavalla, and Krishna C. Mandal, "Schottky barrier detectors on 4H-SiC n-type epitaxial layer for alpha particles," Nuclear Instruments and Methods in Physics Research A, 701, 214-220, 2013.
  • Sandip K. Das and Krishna C. Mandal, “Optical down-conversion in doped ZnSe:Tb3+ nanocrystals,” Nanoscale, 5, 913-915, 2013.
  • Ramesh M. Krishna, Peter G. Muzykov, and Krishna C. Mandal, “Electron beam induced current imaging of dislocations in Cd0.9Zn0.1Te crystal,” Journal of Physics and Chemistry of Solids, 74, 170-173, 2013.
  • Krishna C. Mandal, Ramesh M. Krishna, Peter G. Muzykov, and Timothy C. Hayes, “Fabrication and characterization of high barrier Cd0.9Zn0.1Te Schottky Diodes for high resolution nuclear radiation detectors,” IEEE Transactions on Nuclear Science, 59, 1504 - 1509, 2012.
  • Krishna C. Mandal, Peter G. Muzykov, Ramesh M. Krishna, and J. Russell Terry, “Characterization of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors,” IEEE Transactions on Nuclear Science, 59, 1591 - 1596, 2012.
  • Krishna C. Mandal, Peter G. Muzykov, and J. Russell Terry, “Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers,” Appl. Phys. Lett., 101, 051111-1 - 4, 2012.
  • Peter G. Muzykov, Ramesh M. Krishna, and Krishna C. Mandal, “Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer,” Appl. Phys. Lett., 100, 032101-1-4, 2012.
  • Peter G. Muzykov, Ramesh M. Krishna, and Krishna C. Mandal, “Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy,” J. Appl. Phys., 111, 014910-1-7, 2012.
  • Sandip K. Das and Krishna C. Mandal, “Optical downconversion in rare earth (Tb3+ and Yb3+) doped CdS nanocrystals,” Materials Letters, 66, 46-49, 2012.
  • Ramesh M. Krishna, Timothy C. Hayes, Daniel Krementz, George Weeks, Adrián Méndez Torres, Kyle Brinkman, and Krishna C. Mandal, “Characterization of transparent conducting oxide thin films deposited on ceramic substrates,” Materials Letters, 66, 233-235, 2012.
  • Sandip K. Das, Chet Frye, Peter G. Muzykov, and Krishna C. Mandal, “Deposition and Characterization of Low-cost Spray Pyrolyzed Cu2ZnSnS4 Thin-films for Large-area High-efficiency Heterojunction Solar Cells," ECS Transactions, 45, 153-161, 2012.
  • Krishna C. Mandal, Peter G. Muzykov, and J. Russel Terry, "Design, Fabrication, Characterization, and Evaluation of X-ray Detectors Based on n-type 4H-SiC Epilayers," ECS Transactions, 45, 27-33, 2012.
  • Sandip K. Das and Krishna C. Mandal, “Optical Down-Conversion in Tb3+-Doped Zn-Chalcogenide Quantum Dots,” ECS Transactions, 45, 89-94, 2012.
  • Sandip K. Das and Krishna C. Mandal, “Low-Cost Cu2ZnSnS4 Thin Films for Large-Area High-Efficiency Heterojunction Solar Cells,” Proc. IEEE Photovoltaic Specialists Conference, vol. 978, pp. 2668-2673, 2012.
  • Sandip Das and Krishna C Mandal, "Comparison of Cu2ZnSnS4 Thin-film Properties Prepared by Thermal Evaporation of Elemental Metals and Binary Sulfide Sources," Proc. IEEE Photovoltaic Specialists Conference, vol. 978, pp. 2674-2678, 2012.
  • Krishna C. Mandal and Sandip K. Das, "Fabrication and Characterization of Improved p-GaTe/n-InSe Heterojunction Solar Cells," Proc. IEEE Photovoltaic Specialists Conference, vol. 978, pp. 177-180, 2012.
  • Krishna C. Mandal, Peter G. Muzykov, Sandeep K. Chaudhuri, and J. Russell Terry, “High-Resolution x- and γ-ray Detection Using 4H-SiC n-type Epitaxial Layer,” Invited Talk, IEEE 2012 Medical Imaging Conference, Nuclear Science Symposium & Workshop on Room Temperature Semiconductor X- and Gamma-ray Detectors, Oct. 29 – November 03, Anaheim, California, Invited Paper, IEEE Conf. Record, R07-2, 4216-4221, 2012.
  • Sandeep K. Chaudhuri, Ramesh M. Krishna, Kelvin J. Zavalla, Liviu Matei, Vladimir Buliga, Michael Groza, Arnold Burger, and Krishna C. Mandal “Performance of Cd0.9Zn0.1Te Based High-Energy Gamma Detectors in Various Single Polarity Sensing Device Geometries,” IEEE 2012 Medical Imaging Conference, Nuclear Science Symposium & Workshop on Room Temperature Semiconductor X- and Gamma-ray Detectors, Oct. 29 – November 03, Anaheim, California, IEEE Conf. Record, R13-4, 4266-4270, 2012.
  • Sandeep K. Chaudhuri, Ramesh M. Krishna, Kelvin J. Zavalla, and Krishna C. Mandal, “High energy γ-ray detection using CZT detectors with virtual Frisch grid,” SPIE Proc., vol. 8507, pp. 85070H-1-8, 2012.
  • Krishna C. Mandal, Peter G. Muzykov, Sandeep K. Chaudhuri, and J. Russel Terry, “Assessment of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors”, Invited Talk, SPIE Conf., San Diego, Aug. 12 – 16, 2012, Invited Paper, SPIE Proc., vol. 8507, pp. 85070C-1-10, 2012.
  • Krishna C. Mandal, Ramesh M. Krishna, Timothy C. Hayes, Peter G. Muzykov, Sandip Das, Tangali S. Sudarshan, Shuguo Ma, “Layered GaTe Crystals for Radiation Detectors,” IEEE Transactions on Nuclear Science, 58, 1981-1986, 2011.
  • Krishna C. Mandal, Ramesh M. Krishna, Peter G. Muzykov, Sandip Das, and Tangali S. Sudarshan, “Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors,” IEEE Transactions on Nuclear Science, 58, 1992-1999, 2011.
  • Krishna C. Mandal, Peter Muzykov, Ramesh Krishna, Timothy Hayes, and Tangali S. Sudarshan, “Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide,” Solid State Communications, 151, 532-535, 2011.
  • Guibao Xu, Guan Sun, Yujie J. Ding, Ioulia B. Zotova, Krishna C. Mandal, Alket Mertiri, Gary Pabst, Ronald Roy, and Nils C. Fernelius, “Investigation of Terahertz Generation due to Unidirectional Diffusion of Carriers in Centrosymmetric GaTe Crystals,” IEEE Journal of Selected Topics in Quantum Electronics, 17, 30-37, 2011.
  • Guibao Xu, Guan Sun, Yujie J. Ding , Ioulia B. Zotova, Krishna C. Mandal, Alket Mertiri , Gary Pabst, and Nils Fernelius, “Investigation of symmetries of second-order nonlinear susceptibility tensor of GaSe crystals in THz domain,” Optics Communication, 284, 2027-2030, 2011.
  • Zs. Rak, S. D. Mahanti, Krishna C. Mandal, and N. C. Fernelius, “Doping dependence of electronic and mechanical properties of GaSe1-xTex and Ga1-xInxSe from first principles,” Phys. Rev. B 82, 155203-1-10, 2010.
  • Zs. Rak, S. D. Mahanti, Krishna C. Mandal and N. C. Fernelius, “Defect induced rigidity enhancement in layered semiconductors,” Solid State Communications, 150, 1200-1203, 2010.
  • A. J. Nelson, A. M. Conway, B. W. Strum, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, and K. C. Mandal, “X-ray photoemission analysis of chemically treated GaTe semiconductor surfaces for radiation detector applications,” J. Appl. Phys., 106, 023717-1-5, 2009.
  • Zs. Rak, S. D. Mahanti and Krishna C. Mandal, “Ab initio modeling of hydrogen defects in CdTe,” J. Electron. Mater., 38, 1539-1547, 2009.
  • Zs. Rak, S. D. Mahanti, Krishna C. Mandal, and N. C. Fernelius, “Theoretical studies of defect states in GaTe,” J. Phys.: Condens. Mater., 21, 015504-1-9, 2009.
  • Zs. Rak, S. D. Mahanti, Krishna C. Mandal, N. C. Fernelius, “Electronic structure of substitutional defects and vacancies in GaSe,” J. Phys. Chem. Solids, 70, 344-355, 2009.
  • Yunglong Cui, David D. Caudel, Pijush Bhattacharya, Arnold Burger, Krishna C. Mandal, D. Johnstone, and S. A. Payne, “Deep levels in GaTe and GaTe: In crystals investigated by deep-level transient spectroscopy and photoluminescence,” J. Appl. Phys., 105, 053709-1-4, 2009.
  • J. Liu, Krishna C. Mandal, and G. Koley, “Investigation of nanoscale properties of CdZnTe crystals by scanning spreading resistance microscopy,” Semicond. Sci. Tech., 24, 045012-1-5, 2009.
  • Yunlong Cui, Ryan Dupere, Arnold Burger, D. Johnstone, Krishna C. Mandal, and S. A. Payne, “Acceptor levels in GaSe: In crystals investigated by deep-level transient spectroscopy and photoluminescence,” J. Appl. Phys., 103, 013710-1-4, 2008.
  • Krishna C. Mandal, Sung Hoon Kang, Michael Choi, Jian Chen, Xi-Cheng Zhang, James M. Schleicher, Charles A. Schmuttenmaer, and Nils C. Fernelius, “III–VI Chalcogenide Semiconductor Crystals for Broadband Tunable THz Sources and Sensors,” IEEE Journal of Selected Topics in Quantum Electronics, 14, 284-288, 2008.
  • Krishna C. Mandal, Sung H. Kang, Michael Choi and R. David Rauh, “Rare-Earth Doped Potassium Lead Bromide Mid-IR Laser Sources for Standoff Detection,” Int. J. of High Speed Electronics & Systems, 18, 735–745, 2008.
  • G. Koley, J. Liu, and Krishna C. Mandal, “Investigation of CdZnTe crystal defects using scanning probe microscopy,” Appl. Phys. Lett., 90, 102121-1-3, 2007.
  • Krishna C. Mandal, Sung Hoon Kang, Michael Choi, Jiuan Wei, Lili Zheng, Hui Zhang, Gerald E. Jellison, Michael Groza, and Arnold Burger, “Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors,” J. Electron. Mater., 36, 1013-1020, 2007.
  • Krishna C. Mandal, Sung H. Kang, Michael Choi, Alireza Kargar, Mark J. Harrison, Douglas S. McGregor, A.E. Bolotnikov, G.A. Carini, G.C. Camarda, and R.B. James, “Characterization of Low-Defect Cd0.9Zn0.1Te and CdTe Crystals for High-Performance Frisch Collar Detector,” IEEE Transactions on Nuclear Science, 54, 802-806, 2007.
  • Krishna C. Mandal, Sung Hoon Kang, Michael Choi, Job Bello, Lili Zheng, Hui Zhang, Michael Groza, Utpal N. Roy, Arnold Burger, David E. Holcomb, Gomez W. Wright, and Joseph A. Williams, “Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers,” J. Electron. Mater., 35, 1251-1256, 2006.
  • U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, Krishna C. Mandal, Caleb C. Noblitt, S. A. Speakman, K. Rademaker and S. A. Payne, “Tb3+-doped KPb2Br5: Low-energy phonon mid-infrared laser crystal,” Appl. Phys. Lett., 86, 151911-1-3, 2005.
  • B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and Krishna C. Mandal, Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal, Appl. Phys. Lett., 87, 182104-1-3, 2005.
  • R. Ma, H. Zhang, D.J. Larson and Krishna C Mandal, “Dynamics of melt-crystal interface and thermal stresses in rotational Bridgman crystal growth process,” J. Crystal Growth, 266, 216-223, 2004.
  • K. Rademaker, W. F. Krupke, R. H. Page, S. A. Payne, K. Peterman, G. Huber, A. P. Yelisseyev, L. I. Isaenko, U. N. Roy, A. Burger, Krishna C. Mandal and K. Nitsch, “Optical Properties of Nd3+- and Tb3+-doped KPb2Br5 and RbPb2Br5 with low nonradiative decay,” J. Opt. Soc. Am. B, 21, 2117-2129, 2004.
  • A. Sengupta, K. C. Mandal, and J. Z. Zhang, “Ultrafast Electronic Relaxation Dynamics in Layered Iodide Semiconductors: A Comparative Study of Colloidal BiI3 and PbI2 Nano-particles,” J. Phys. Chem. B, 104, 9396-9403, 2000.
  • A. Sengupta, B. Jiang, K. C. Mandal and J. Z. Zhang, “Ultrafast Electronic Relaxation Dynamics in PbI2 Semiconductor Colloidal Nano-particles: A Femtosecond Transient Absorption Study,” J. Phys. Chem. B, 103, 3128-3137, 1999.
  • O. Savadogo and K. C. Mandal, “Low Cost Schottky Barrier Solar Cells Fabricated on CdSe and n-Sb2S3 Films Chemically Deposited with Silicotungstic Acid,” J. Electrochem. Soc., 141, 2871-2877, 1994.
  • O. Savadogo and K. C. Mandal, “Fabrication of low-cost n-n-Sb2S3/p-Ge heterojunction solar cells,” J. Phys. D: Appl. Phys., 27, 1070-1075, 1994.
  • O Savadogo and K. C. Mandal, “Low-cost technique for preparing n-Sb2S3/p-Si Heterojunction Solar Cells,” Appl. Phys. Lett., 63, 228-230, 1993.
  • J. -N. Chazalviel, V. M. Dubin, K. C. Mandal and F. Ozanam, “Modulated Infrared Spectroscopy at the Electrochemical Interface,” Applied Spectroscopy, 47, 1411-1416, 1993.
  • O. Savadogo and K. C. Mandal, “Improved Schottky Barrier on n-Sb2S3 Films Chemically Deposited with Silicotungstic Acid,” Electronics Letters, 28, 1682-1683, 1992.
  • K. C. Mandal, O. Ozanam and .J. -N. Chazalviel, “In-situ Infrared Investigations of the Electrochemistry of Heteropolyacids at n-Ge Electrodes,” J. Electroanal. Chem., 336, 153-170, 1992.
  • Characterizations of Antimony Tri-Sulfide Chemically Deposited with Silicotungstic Acid, O Savadogo and K. C. Mandal, J. Electrochem. Soc., 139, L16-L18, 1992.
  • O Savadogo and K. C. Mandal, “Studies on new chemically deposited photoconducting antimony trisulphide thin films,” Solar Energy Mater. Solar Cells, 26, 117-136, 1992.
  • O. Savadogo and K. C. Mandal, “Photoelectrochemical (PEC) solar cell properties of chemically deposited cadmium selenide thin films with heteropolyacids,” Materials Chem. Phys., 31, 301-309, 1992.
  • K. C. Mandal and O. Savadogo, “A New Chemical Method of Preparing Semiconducting MoX2 (X = S, Se) Thin Films,” Japanese J. Appl. Phys., 30, 3484-3487, 1991.
  • Krishna C Mandal and Oumarou Savadogo, “Novel Chemical Preparative Route for Semiconducting MoSe2 thin Films,” J. Materials Chemistry, Royal Soc. Chem., 1, 301-302, 1991.
  • K. C. Mandal, F. Ozanam and J. -N. Chazalviel, “In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge,” Appl. Phys. Lett., 57, 2788-2790, 1990.
  • K. C. Mandal and A. Mondal, “A New Chemical Method for Preparing Semiconductor Grade Antimony Tri-Sulphide Thin Films,” J. Phys. Chem. Solids, 51, 1339-1341, 1990.
  • G. S. Sanyal, A. Mondal, K. C. Mandal, B. Ghosh, H. Saha and M. K. Mukherjee, “A Comparative Study of CdTe Films Prepared by Different Techniques,” Solar Energy Materials, 20, 395-404, 1990.
  • Krishna C. Mandal and A. Mondal, “Chemically deposited Semiconducting Molybdenum Sulfide Thin Films,” J. Solid State Chem., 85, 176-179, 1990.
  • D. N. Bose, M. S. Hedge, S. Basu and K. C. Mandal, “XPS Studies on Ru-modified CdTe Surfaces,” Semicond. Sci. Technol., 4, 866-870, 1989.
  • D. N. Bose, S. Basu and K. C. Mandal, “Characterization of Chemically Modified CdTe Surfaces,” Thin Solid Films, 164, 13-19, 1988.
  • K. C. Mandal, S. Basu and D. N. Bose, “Effects of Surface Modification on n-CdTe Photoelectrochemical Solar Cells,” J. Phys. Chem., 91, 4011, 1987.
  • K. C. Mandal, S. Basu and D. N. Bose, “Correlation of Fermi level Shift with Photovoltages at Ruthenium-Modified CdTe Surfaces,” J. Solid State Chem., 71, 559-561, 1987.
  • K. C. Mandal, S. Basu and D. N. Bose, “Effect of Surface Modification on Sub-bandgap Response of n-CdTe Photoelectrodes,” Surface Science, 188, 235-240, 1987.
  • K. C. Mandal, S. Basu and D. N. Bose, “Surface Modified CdTe PEC Cells,” Solar Cells, 18, 25-30, 1986.
  • D. N. Bose, S. Basu, K. C. Mandal and D. Mazumder, “Evidence for amphoteric behavior of Ru on CdTe surfaces,” Appl. Phys. Lett., 48, 472-474, 1986.
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