Postdoctoral position in semiconductor device fabrication and characterization

The Silicon Carbide (SiC) Research Laboratory in the Department of Electrical Engineering at University of South Carolina has an opening for a postdoctoral research associate starting immediately. Interested candidates should send their full CVs and a list of 3 references to Dr. Feng Zhao by e-mail. This is initially a one year position, with renewal after first year contingent upon satisfactory progress. Salary will be commensurate with experience.

Responsibilities: The candidate will be responsible for fabrication and electrical characterization of SiC high frequency and high power devices. Other responsibilities include assistance in grant proposal writing, general lab supervision, clean room and facility maintenance.

Requirements:

• An earned doctoral degree (preferably from an accredited US university) with a strong background in semiconductor device R&D is required;
• Sufficient clean room and process development experience in photolithography, etching, oxidation, metallization, sputtering, annealing, etc. is required;
• Experience in device characterization is required;
• Experience in photomask design (CAD, LASI, etc.), device simulation and modeling (Atlas, Medici, etc.) is preferable;
• Direct experience in SiC or GaN devices is a plus.

Contact information:
Professor Feng Zhao
3A79 Swearingen Center
301 South Main Street
Department of Electrical Engineering
University of South Carolina
Columbia, SC 29208
Ph: (803) 777-6303
Fax: (803) 777-8045