Postdoctoral position in CVD growth and material characterization

The Silicon Carbide (SiC) Research Laboratory in the Department of Electrical Engineering at University of South Carolina has an opening for a postdoctoral research associate starting immediately. Interested candidates should send their full CVs and a list of 3 references to Dr. T. S. Sudarshan by e-mail at sudarsha@cec.sc.edu. This is initially a one year position, with renewal after the first year contingent upon satisfactory progress. Salary will be commensurate with experience.

Responsibilities: The candidate will be responsible for CVD growth of SiC epitaxial films, structural/electrical/mechanical characterization, and applications in high power and high frequency SiC devices. Other responsibilities include assistance in grant proposal writing, general lab supervision and facility maintenance.

Requirements: An earned doctoral degree (preferably from an accredited U.S. university) and a strong background in MOCVD or PECVD epitaxial growth are required. Semiconductor material and structural characterization experiences with SEM, AFM, TEM, XRD, Raman, Hall, DLTS, and anodic oxidation are preferable. Background in CVD growth of SiC and graphene will be a plus.

Contact information:
Professor T. S. Sudarshan
3A79 Swearingen Center
301 South Main Street
Department of Electrical Engineering
University of South Carolina
Columbia, SC 29208
Ph: (803) 777-5174
Fax: (803) 777-8045