Silicon carbide is a wide band gap semiconductor that has potential applications in high power, high frequency and high temperature electronic devices. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient and thus are more ideal for high-voltage power electronics applications. SiC Schottky diodes combine efficient switching and high voltage capabilities beyond those seen in silicon.

The downside is that SiC devices are still more expensive than silicon-based PIN diodes. To make SiC devices enter the mainstream market, it is necessary to increase the device yield per wafer area. Compact integrated circuit solutions are also attractive to the commercial market. This goal entails a detailed analysis into the defect-device performance correlation and interface inhomogeneity issues that could kill the device performance and yield in SiC Schottky diodes along with the development of SiC processing technology to fabricate lateral structures (active and passive devices) in SiC that can be integrated with Si. Since surface modification procedures like RIE and hydrogen etching resulted in modification of forward and reverse behavior in the fabricated diodes, the surface defects and metal-semiconductor interface issues have been examined in this work. This work attempts to correlate the material defects and metal semiconductor interface inhomogeneity with the SiC Schottky forward and reverse performance. The fabrication of trench schottky diodes in SiC and the utilization of diffusion based technology in the fabrication of lateral resistors and capacitors have been discussed in this work.