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The University of South Carolina Department of Electrical Engineering Presents D4H-SiC Bipolar Junction Transistors for RF and Power Applications Dr. Feng Zhao Microsemi Corporation, Bend, Oregon When: 11:00AM on Friday, November 30, 2007 Where: 3D05 in Swearingen Center 4H-SiC BJTs are promising candidates for RF applications due to their ability to handle higher bias voltage and higher power density compared to their silicon counterparts. The combination of these performance advantages, along with the superior thermal conductivity of SiC substrates lead to compact and rugged high power RF amplifiers for radar, avionics, and high capacity networked communication applications. 4H-SiC BJTs are also important devices for high-power and high-temperature switching applications. They are intrinsically normally-off devices with the potential of blocking high voltage and achieving low on-resistances due to carrier injection and conductivity modulation. In this talk, 4H-SiC BJTs for both RF power amplifier and power switching applications will be reported. Under Class AB mode at 1 GHz with a 1 ms pulse width and 10% duty cycle, a packaged single-cell device exhibited 10.1 dB gain and 22.9 W output power (313.8 kW/cm2) with a 40.8 % PAE. For power switching applications, power 4H-SiC BJTs with blocking voltage larger than 1200 V were fabricated. At VCE=2 V, an emitter current density of 200 A/cm2 was achieved, corresponding to a specific on-resistance of 10 mΩ-cm2. Finally, the simulation and design of 4H-SiC based analog and digital circuit components for power electronics, and high voltage (1200 V) Schottky barrier diodes for inverters used in SMPS and Photovoltaic integrated power conversion will be discussed. |
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