Go to USC home page USC Logo Electrical Engineering Department - Seminar Series
UNIVERSITY OF SOUTH CAROLINA - ELECTRICAL ENGINEERING DEPARTMENT    
USC  THIS SITE
The University of South Carolina
Department of Electrical Engineering
Presents

Advanced Device Concepts Facilitated by Novel Epitaxy Technology with Emphasis on InGaN Photovoltaics and Multifunctional Materials and Devices

W. Alan Doolittle

School of Electrical and Computer Engineering, Georgia Institute of Technology

When: Friday, Nov 16, at 10:00AM
Where: 3D05 in Swearingen Center

After a brief overview of Dr. Doolittle’s programs at Ga Tech including the latest results on development of real time configurable 3D epitaxy, fundamental studies on p-type III-Nitrides, monolithic integration of wide bandgap semiconductor devices with non-linear optical and ferroelectric materials, and phosphor free white light emitters using defect engineering, a more in depth discussion of the present state of the art in InGaN photovoltaics and multifunctional oxide materials and devices will be presented.

In principle, InGaN has a unique ability to span the entire solar spectral range creating a highly efficient mechanism for photovoltaic conversion. However, in practice several present technology limitations exist including but not limited to defects resultant from lattice mismatch and p-type doping limitations which would lower the usable spectral range to far less than often promoted by InGaN supporters. Herein, we will present the reasons for looking at InGaN for photovoltaics, show its limitations based on today’s materials technology and present the state of the art in InGaN photovoltaic performance.

Multifunctional materials, materials that interact with their environment via differing force mechanisms, including but not limited to electrostatic, magnetic, acoustic, photonic, and chemical, are of great interest for future advanced applications. Lithium metal oxide multifunctional materials, including LiNbO2, LiNbO3, LiTaO2 and LiTaO3 are presented as a promising but challenging materials for multifunctional devices. Example proposed applications will be presented. A chloride based chemistry that bypasses many of the traditional pitfalls of Lithium Niobate (LN) has been developed. The present state of homoepitaxy and heteroepitaxy of LN on semiconductors is presented. It is shown that control of oxygen stiochiometry through vacuum conditions allows the new semiconductor, LiNbO2 to be preferentially grown over LiNbO3 in the oxygen deficient MBE vacuum environment. While the demonstrated metal chloride based epitaxy is shown as a viable candidate for MBE of multifunctional refractory metal oxides, particularly for electronic applications, the possibility for thicker films, and thus impact on optical devices, is currently limited by the available Li source. Efforts to circumvent this difficulty, including a large volume valved Li source, will be described.

While having a diverse topical coverage, the hope is to convey a useful approach to electronic/optoelectronic design driven by the questions: 1) What new device can you envision? 2) What new materials/device structures will make this device a reality? and finally, 3) What tooling/techniques are needed to achieve these materials? It will be shown that the ordering of these questions largely dictates whether the research is engineering based or science based and whether or not it will result in a useful device.

RETURN TO TOP
USC LINKS: DIRECTORY MAP EVENTS VIP
SITE INFORMATION